Interface type polymorphic resistive random access memory based on electrode stack and preparation method thereof

Abstract

The invention belongs to the field of multi-state storage, and discloses an interface type multi-state resistive random access memory based on an electrode stack and a preparation method thereof. Themulti-state resistive random access memory comprises a substrate, and a bottom electrode, an oxygen ion storage layer, an active electrode stack layer and a top electrode which are sequentially deposited on the substrate from bottom to top; the active electrode stack layer comprises a plurality of electrode layers which are sequentially arranged from bottom to top, the plurality of electrode layers are respectively made of active metal materials with different activities, the lowermost electrode layer is in contact with the oxygen ion storage layer, and the uppermost electrode layer is in contact with the top electrode. Under the action of external voltage, the active electrode stack layer can be oxidized step by step through oxygen ions in the oxygen ion storage layer, the oxidation thickness of the active electrode stack layer is changed, the interface barrier height of the active electrode stack layer is further changed, different conductive states are generated, and the resistive random access memory in multiple resistance states is realized.

Description

technical field [0001] The invention belongs to the field of multi-state storage, and relates to an interface type multi-state resistive variable memory based on an electrode stack and a preparation method thereof. Background technique [0002] At this stage, the field of artificial intelligence still uses the traditional von Neumann architecture, which implements binary operations, and the process of transmitting information between the memory and the processor still needs to be realized through the bus, which means that the data transmission on the bus will generate a lot of work. Consumption loss. In comparison, the human brain consumes much less power when processing the same amount of data, so people gradually realize that artificial intelligence based on the von Neumann architecture cannot achieve true brain-like intelligence, only by optimizing the hardware structure In order to truly realize brain-like computing. The human brain nervous system is composed of variou...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the disadvantages of poor electrical performance stability of the existing multi-state resistive memory due to the randomness of the formation and fusing of conductive filaments in the above-mentioned prior art, and to provide an interface-type multi-state multi-state based on electrode stacks. Resistive state memory and its preparation method

Images