Indium lanthanum titanium oxide transparent conductive film

A transparent conductive film, titanium oxide technology, applied in the field of optoelectronics, to achieve the effects of good thermal stability, good electrical conductivity, and improved device performance

Inactive Publication Date: 2011-06-29
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a kind of chemical stability is good, good electrical conductivity, high visible light transmittance and high work function can be widely used in the preparation of liquid crystal display screen, electroluminescence device, solar cell, organic and inorganic semiconductor laser etc. A new type of indium lanthanum titanium oxide transparent conductive film for optoelectronic devices, to overcome the above-mentioned defects in the current conventional transparent conductive film materials, and effectively improve the performance of optoelectronic devices such as brightness or photoelectric conversion efficiency

Method used

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  • Indium lanthanum titanium oxide transparent conductive film

Examples

Experimental program
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Embodiment 1

[0019] In the ZZS660 box-type high-vacuum coating machine produced by Chengdu Vacuum Machinery Factory, the electron beam deposition process is used to prepare ILTO transparent conductive film. The specific steps are as follows:

[0020] a. The glass substrate was ultrasonically cleaned in ALCONOX cleaning agent, acetone and deionized water for 10 minutes respectively, dried with dry nitrogen and placed in a vacuum chamber, and the vacuum chamber was evacuated to 2.0×10 -3 Pa, and then heat the glass substrate, the temperature range is 60-400°C.

[0021] b. Fill the vacuum chamber with oxygen and argon with a purity of 99.99%, and control the volume ratio of the charged oxygen to argon to be 0.1:1 to 2:1, and use a pressure controller to control the pressure in the vacuum chamber at 7×10 -3 ~4×10 -1 within the Pa range.

[0022] c. In order to avoid the influence of the surface composition of the glass substrate on the film-forming performance of ILTO, a layer of aluminum ox...

Embodiment 2

[0029] In the vacuum coating machine, the vacuum thermal evaporation process is used to prepare the ILTO transparent conductive film. The specific steps are as follows:

[0030] a. The quartz substrate was ultrasonically cleaned in ALCONOX cleaning agent, acetone and deionized water for 10 minutes respectively, dried with dry nitrogen and placed in a vacuum chamber, and the vacuum chamber was evacuated to 2.0×10 -3 Pa, and then heat the substrate at a temperature of 60-400°C.

[0031] b. Fill the vacuum chamber with high-purity oxygen and argon, and control the volume ratio of oxygen and argon to be 0.1:1 to 2:1. After filling the gas, control the pressure in the vacuum chamber to be 7×10 -3 ~4×10 -1 within the Pa range.

[0032] c. Using metal In, La and Ti as raw materials, the ILTO thin film was deposited by three-source co-evaporation, in which the evaporation rate of metal In was 0.2-3nm / s, the evaporation rate of La was 0.04-1nm / s, Ti The evaporation rate is 0.04-1nm / ...

Embodiment 3

[0034] In a magnetron sputtering vacuum coating machine, a magnetron sputtering process is used to prepare an ILTO transparent conductive film on a glass substrate. The specific steps are as follows:

[0035] a. The glass substrate was ultrasonically cleaned in ALCONOX cleaning agent, acetone and deionized water for 10 minutes respectively, dried with dry nitrogen and placed in a vacuum chamber, and the vacuum chamber was evacuated to 2.0×10 -3 Pa, and then heat the glass substrate, the temperature range is 60-400°C.

[0036] b. Filling the vacuum chamber with oxygen and argon with a purity of 99.99%, controlling the volume ratio of the charged oxygen to argon to be 0.1:1 to 2:1, and controlling the pressure in the vacuum chamber to be 7×10 -3 ~4×10 -1 within the Pa range.

[0037] c. In order to avoid the influence of the surface composition of the substrate on the film-forming performance of ILTO, a layer of SiO is first grown on the substrate 2 , the thickness is 5-200nm...

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Abstract

The invention relates to an indium lanthanum titanium oxide transparent conductive film being applied to the optoelectronic devices such as the liquid crystal display, the electroluminescence device, the solar battery, the organic or inorganic semiconductor laser and the like, which is formed by doping the elements of La and Ti to In2O3 basal body, wherein the mass ratio of Ti to In is 0.002:1 to0.3:1, and the mass ration of La and Ti to In is 0.005:1 to 0.4:1. The transparent conductive film has the advantages of good chemical stability, better conductive performance, high visible light transmission and high work function, and effectively improves the brightness, the optoelectronic conversion efficiency and the other performance of the optoelectronic device.

Description

technical field [0001] The invention belongs to the technical field of optoelectronics, and relates to a transparent conductive film applicable to optoelectronic devices such as liquid crystal displays, electroluminescence devices, solar cells, organic and inorganic semiconductor lasers, and the like. Background technique [0002] Transparent conductive film is an excellent optoelectronic information material, which not only has good conductivity, but also has good light transmission in the visible light range. These characteristics make it widely used in optoelectronic technology fields such as liquid crystal displays, electroluminescent devices, solar cells, organic and inorganic semiconductor lasers. [0003] At present, the customary transparent conductive film is mainly based on indium trioxide (In 2 o 3 ), tin dioxide (SnO 2 ) or zinc oxide (ZnO) as the matrix, and an oxide material composed of other doping elements. Among them, the most widely used commercially is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B1/08H01B5/14
Inventor 刘星元刘晓新王宁
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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