Organic electroluminescent device and preparation method

An electroluminescent device and luminescent technology, which is applied in the manufacture of organic semiconductor devices, electric solid devices, semiconductor/solid state devices, etc., can solve the problems of total reflection loss, low light extraction performance, poor refractive index, etc.

Inactive Publication Date: 2014-08-27
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In traditional light-emitting devices, only about 18% of the light inside the device can be emitted to the outside, while the rest will be consumed outside the device in other forms, and there is a difference in refractive index between the interfaces (such as between gla

Method used

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  • Organic electroluminescent device and preparation method
  • Organic electroluminescent device and preparation method
  • Organic electroluminescent device and preparation method

Examples

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preparation example Construction

[0033] Please also see figure 2 , the preparation method of the organic electroluminescent device 100 of an embodiment, it comprises the following steps:

[0034] Step S110 , preparing the anode 30 on the back of the glass substrate 20 by magnetron sputtering.

[0035] The glass substrate 20 is glass with a refractive index of 1.8-2.2, and the transmittance at 400 nm is higher than 90%. The glass substrate 20 is preferably glass with a grade of N-LAF36, N-LASF31A, N-LASF41A or N-LASF44.

[0036] The material of the anode 30 includes at least one of indium tin oxide (ITO), aluminum zinc oxide (AZO) and indium zinc oxide (IZO). The thickness of the anode 30 is 80nm~300nm. A preferred thickness is 120 nm.

[0037] Magnetron sputtering at a vacuum pressure of 5×10 -5 Pa~2×10 -3 Under Pa, the acceleration pressure is 300V-800V, the magnetic field is 50G-200G, and the power density is 1W / cm 2 ~40W / cm 2 .

[0038] In this embodiment, the glass substrate 20 is rinsed with di...

Embodiment 1

[0052] The structure prepared in this example is / glass substrate / ITO / CuO:F4-TCNQ:PrO 2 / TCTA / Alq 3 / Bphen / CsF / Ag organic electroluminescence device.

[0053] The glass substrate is N-LASF44. After rinsing the glass substrate with distilled water and ethanol, soak it in isopropanol for one night. The anode is prepared on the surface of the glass substrate by magnetron sputtering, the anode material is ITO, the thickness is 120nm, and the condition of magnetron sputtering is that the pressure is 8×10 -4 Pa, accelerating voltage 400V, magnetic field 100G, power density 25W / cm 2 , using electron beams to prepare a hole injection layer on the surface of the anode, the material of the hole injection layer is CuO and F4-TCNQ doped in PrO 2 Among them, CuO accounts for PrO 2 The mass percentage is 20%, F4-TCNQ accounts for PrO 2 The mass percentage is 0.5%, and the electron beam is used at a pressure of 8×10 -4 Pa, the energy density is 20W / cm 2 The hole injection layer was pr...

Embodiment 2

[0058]The structure prepared in this example is / glass substrate / AZO / Ag 2 O:1T-NATA:Pr 2 o 3 / TAPC / ADN / TAZ / LiF / Pt organic electroluminescent devices.

[0059] The glass substrate is N-LAF36. After rinsing the glass substrate with distilled water and ethanol, soak it in isopropanol for one night; prepare an anode on the surface of the glass substrate by magnetron sputtering. The anode material is AZO with a thickness of 300nm , the condition of magnetron sputtering is that the pressure is 2×10 -3 Pa, acceleration voltage 300V, magnetic field 50G, power density 1W / cm 2 , using electron beams to prepare a hole injection layer on the surface of the anode, the material of the hole injection layer is Ag 2 O and 1T-NATA doped in praseodymium trioxide, where Ag 2 O accounts for 10% of the mass percentage of praseodymium dioxide, 1T-NATA accounts for 0.1% of the mass percentage of praseodymium dioxide, and the electron beam is used at a pressure of 2×10 -3 Pa, the energy density ...

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Abstract

An organic electroluminescent device comprises a glass substrate, an anode, a hole injection layer, a hole transport layer, a luminescent layer, an electron transport layer, an electron injection layer and a cathode which are successively laminated. Materials of the hole injection layer contain a lanthanide oxide and a copper oxide and a p-type organic hole material which are doped in the lanthanide oxide. Mass of the copper oxide accounts for 10wt%-30wt% of mass of the lanthanide oxide, and mass of the p-type organic hole material accounts for 0.1wt%-5wt% of mass of the lanthanide oxide. Luminous efficiency of the above organic electroluminescent device is high. The invention also provides a preparation method of the organic electroluminescent device.

Description

technical field [0001] The invention relates to an organic electroluminescence device and a preparation method thereof. Background technique [0002] The luminescence principle of organic electroluminescent devices is based on the action of an external electric field, electrons are injected from the cathode to the lowest unoccupied molecular orbital (LUMO) of organic matter, and holes are injected from the anode to the highest occupied molecular orbital (HOMO) of organic matter. Electrons and holes meet, recombine, and form excitons in the light-emitting layer. Excitons migrate under the action of an electric field, transfer energy to the light-emitting material, and excite electrons to transition from the ground state to the excited state. The excited state energy is deactivated by radiation to generate photons , releasing light energy. [0003] In traditional light-emitting devices, only about 18% of the light inside the device can be emitted to the outside, while the res...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K71/16H10K50/17H10K2102/00
Inventor 周明杰王平黄辉张振华
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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