Preparation method of cathode interface layer with high air stability

A cathode interface layer and air stability technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, photovoltaic power generation, etc., can solve the problems of poor interface barrier and device stability, reduce interface barrier, improve transmission efficiency, Improve the effect of interface contact

Inactive Publication Date: 2020-04-10
NANCHANG HANGKONG UNIVERSITY
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

The existing cathode interface layers are random or alternating water-soluble conjugated polymer electrolytes, fullerene derivatives, and inorganic zinc oxide, etc. These cathode interface layers cannot simultaneously solve the interface barrier and the poor stability of the device in the air. The problem

Method used

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  • Preparation method of cathode interface layer with high air stability
  • Preparation method of cathode interface layer with high air stability
  • Preparation method of cathode interface layer with high air stability

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Embodiment Construction

[0030] The present invention will be further described below in conjunction with the accompanying drawings.

[0031] The reaction equation of the present invention is attached Figure 4 , the specific reaction steps are as follows:

[0032] Synthetic steps of high air stability cathode interface layer FBFTFSI and FBFPFSI:

[0033] (1) Synthesis of Compound 1: Add 2-bromofluorene (7.35g, 30mmol), 1,6-dibromohexane (36.29g, 150mmol), 0.1M NaOH (10mL), Phase transfer catalyst tetra-n-butylammonium bromide 10mg and 60mL acetone. The reaction solution was refluxed and stirred overnight at 80°C, and the acetone was spin-dried by a vacuum rotary evaporator, and excess 1,6-dibromohexane was removed by vacuum distillation. : 1 through a silica gel column and purified, and dried with anhydrous magnesium sulfate to obtain a white solid product with a yield of 79%. 1 H NMR (400MHz, CDCl 3 ),(ppm):7.54-7.58(t,3H),7.48-7.45(d,2H),7.44(s,2H),3.31-3.28(t,4H),1.95-1.90(t,4H),1.71 -1.64(t...

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Abstract

The invention discloses a preparation method of a cathode interface layer with a high air stability. The preparation method comprises the following steps: carrying out a Suzuki coupling reaction on 2-(9,9-bis(6-bromohexyl)-9H-fluorene)-4,4,5,5-tetramethyl-oxaborolane and 4,7-dibromobenzothiadiazole to prepare a fluorene and benzothiadiazole compound, ionizing the fluorene and benzothiadiazole compound by trimethylamine, and carrying out ion exchange by lithium bis(trifluoromethanesulfonyl)imide or lithium bis(pentafluoroethanesulfonyl)imide to obtain the final product. A side chain contains apolar ion group and an F atom, so that the polymer can form a dipole on the interface, reduces the interface potential barrier, improves interface contact, realizes processing of polar non-halogen solvents such as N,N-dimethylformamide and dimethyl sulfoxide, and is environmentally friendly. The existence of the F atom makes the material have a hydrophobic function and improves the stability of the material in air, so that the stability of an organic solar cell device in air is improved.

Description

technical field [0001] The invention relates to the technical field of cathode interface of organic solar cells, in particular to a preparation method of a cathode interface layer with high air stability. Background technique [0002] The global energy demand is increasing year by year. The effective development and utilization of solar renewable energy adheres to the country's green development idea. Solar cells are the most direct way to utilize solar energy. Effective development and utilization of solar energy is of great significance to my country's social and economic development. This will Change the status quo of my country's energy shortage and environmental degradation, and promote the sustainable development of my country's social economy. Therefore, improving the device efficiency of solar cells is the key to utilizing solar energy. [0003] Although silicon-based solar cells have high photoelectric conversion efficiency, their high cost limits their further prom...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07D285/14H01L51/46
CPCC07D285/14H10K85/626H10K85/657Y02E10/549
Inventor 周丹徐镇田杨飞秦元成谢宇
Owner NANCHANG HANGKONG UNIVERSITY
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