Perovskite photovoltaic cell for passivating adjacent interfaces of photosensitive layers by MoS2 nanosheet and preparation method of perovskite photovoltaic cell

A photovoltaic cell and perovskite technology, applied in photovoltaic power generation, nanotechnology, nanotechnology, etc., can solve problems such as the impact of the environment and its carrying capacity, and achieve effective matching, increase migration channels, and reduce accumulation.
CN113991025APending Publication Date: 2022-01-28WUHAN INSTITUTE OF TECHNOLOGY

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
WUHAN INSTITUTE OF TECHNOLOGY
Publication Date
2022-01-28

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Abstract

The invention discloses a perovskite photovoltaic cell for passivating adjacent interfaces of photosensitive layers by an MoS2 nanosheet and a preparation method of the perovskite photovoltaic cell. The cell sequentially comprises a transparent conductive substrate, an electron transport layer, a perovskite photosensitive active layer, a hole transport layer and a metal electrode; the cell further comprises an interface passivation layer, wherein the interface passivation layer is a MoS2 nanosheet; the MoS2 nanosheet is prepared by a ball milling method; and the interface passivation layer is located between the electron transport layer and the perovskite photosensitive active layer or between the perovskite photosensitive active layer and the hole transport layer. The MoS2 nanosheet obtained through a simple ball milling method has a large specific surface area and mesopores, contact between the MoS2 nanosheet and a perovskite photosensitive layer and an interface layer is effectively enlarged, migration channels of carriers are increased, accumulation of the carriers at the interface is reduced, the extraction rate of the interface layer to the carriers is balanced, and interface recombination is reduced, so that the interface regulation and control technology with high efficiency, long service life, low cost, good stability and high efficiency and a corresponding photovoltaic device are developed.
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Description

technical field

[0001] The invention belongs to the field of thin film materials and devices, in particular to a two-dimensional material MoS 2 A perovskite photovoltaic cell with a nanosheet passivation interface between a hole transport layer / photosensitive layer or an electron transport layer / photosensitive layer and a preparation method thereof. Background technique

[0002] Until 2021, the maximum efficiency of perovskite photovoltaic cells (PSCs) has exceeded 25% (https: / / www.nrel.gov / pv / cell-efficiency.html), and the stability is greatly affected during the commercial development process. focus on. In order to improve the efficiency and stability of battery devices, in addition to preparing high-quality perovskite photosensitive layers, appropriate interface modification and passivation (including electron / hole transport interface layer preparation, doping and related interface modification, etc.) It is very important in the process of device preparation and researc...

Claims

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