Perovskite photovoltaic cell for passivating adjacent interfaces of photosensitive layers by MoS2 nanosheet and preparation method of perovskite photovoltaic cell
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- WUHAN INSTITUTE OF TECHNOLOGY
- Publication Date
- 2022-01-28
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Abstract
Description
technical field
[0001] The invention belongs to the field of thin film materials and devices, in particular to a two-dimensional material MoS 2 A perovskite photovoltaic cell with a nanosheet passivation interface between a hole transport layer / photosensitive layer or an electron transport layer / photosensitive layer and a preparation method thereof. Background technique
[0002] Until 2021, the maximum efficiency of perovskite photovoltaic cells (PSCs) has exceeded 25% (https: / / www.nrel.gov / pv / cell-efficiency.html), and the stability is greatly affected during the commercial development process. focus on. In order to improve the efficiency and stability of battery devices, in addition to preparing high-quality perovskite photosensitive layers, appropriate interface modification and passivation (including electron / hole transport interface layer preparation, doping and related interface modification, etc.) It is very important in the process of device preparation and researc...