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Perovskite photovoltaic cell passivated with Au@CdS nanoparticles

A nanoparticle and photovoltaic cell technology, applied in the field of materials, can solve the problems of low carrier mobility and unfavorable carrier migration, and achieve the effects of inhibiting diffusion, improving battery short-circuit current and filling factor, and increasing hole density.

Active Publication Date: 2019-09-27
WUHAN INSTITUTE OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, although the chemical properties of insulator SiO2 are stable, it is not conducive to carrier migration; TiO 2 There are defects such as high temperature sintering and low carrier mobility

Method used

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  • Perovskite photovoltaic cell passivated with Au@CdS nanoparticles
  • Perovskite photovoltaic cell passivated with Au@CdS nanoparticles
  • Perovskite photovoltaic cell passivated with Au@CdS nanoparticles

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Such as figure 1 As shown, a planar structure perovskite photovoltaic cell includes a transparent conductive substrate, an electron transport layer, a perovskite photosensitive active layer, an interface passivation layer, a hole transport layer and a metal electrode, and its preparation method includes the following steps:

[0039] (1) Treatment of transparent conductive substrate: cleaning FTO (fluorine-doped SnO 2 ) conductive glass sheet, first soak the conductive glass sheet in a solution containing a cleaning agent (such as Libai brand liquid detergent) for 30 minutes, then repeatedly scrub and rinse with clean water; then polish with polishing powder; then respectively Put it into a vessel containing deionized water, acetone and alcohol and sonicate it for 20 minutes; finally put it in deionized water and rinse it twice, blow dry with a nitrogen gun and put it in an oven at 80°C for drying;

[0040] (2)SnO 2 Preparation of QD thin films: SnO on FTO substrates ...

Embodiment 2

[0052] Such as figure 1 As shown, a planar structure perovskite photovoltaic cell includes a transparent conductive substrate, an electron transport layer, a perovskite photosensitive active layer, an interface passivation layer, a hole transport layer and a metal electrode, and its preparation method includes the following steps:

[0053] (1) cleaning ITO conductive glass sheet: with embodiment 1;

[0054] (2)SnO 2 Thin Film Preparation: SnO Fabrication on ITO Substrates 2 film, and put it into a UV-ozone cleaner, and treat it with UV-ozone for 15 minutes in an atmospheric atmosphere and at room temperature, and the treated SnO 2 / ITO substrate is quickly transferred into the glove box;

[0055] (3) Preparation of perovskite photosensitive active layer: same as Example 1;

[0056] (4) Prepare an interface passivation layer on the perovskite photosensitive film:

[0057] a. Solution preparation: Dissolve the previously synthesized Au@CdS nanoparticles with a particle size...

Embodiment 3

[0063] Such as figure 1 As shown, a planar structure perovskite photovoltaic cell includes a transparent conductive substrate, an electron transport layer, a perovskite photosensitive active layer, an interface passivation layer, a hole transport layer and a metal electrode, and its preparation method includes the following steps:

[0064] (1) cleaning FTO conductive glass sheet: with embodiment 1;

[0065] (2)SnO 2 QD film preparation: with embodiment 1;

[0066] (3) Preparation of perovskite photosensitive active layer: same as Example 1;

[0067] (4) Prepare an interface passivation layer on the perovskite photosensitive film:

[0068]a. Solution preparation: Dissolve the previously synthesized Au@CdS nanoparticles with a particle size of 30nm and a CdS-wrapped thickness of 10nm in 1ml of chlorobenzene solvent, sonicate in an ultrasonic cleaner for 1h, and the solution concentration is 0.03mmol / mL. stand-by;

[0069] b. Preparation of interface passivation layer: In an...

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Abstract

The present invention discloses a perovskite photovoltaic cell passivated with Au@CdS nanoparticles. An interface passivation layer is disposed between an electron transport layer and a perovskite photosensitive active layer, or the interface passivation layer is disposed between the perovskite photosensitive active layer and a hole transport layer, or the interface passivation layer is disposed among the electron transport layer, the perovskite photosensitive active layer and the hole transport layer. The interface passivation layer is an Au@CdS nanoparticle coating having a core-shell structure. The perovskite photovoltaic cell suppress its diffusion (to reduce electric leakage) in a device, reduces the interface barrier, achieves effective energy level matching between the hole / electron transport layer and the perovskite photosensitive layer, and balances the respective current carrier extraction rates of the hole transport layer and the electron transport layer so as to achieve a purpose of increasing the short-circuit current and the fill factor of a battery.

Description

technical field [0001] The invention belongs to the technical field of materials, and in particular relates to a perovskite photovoltaic cell. Background technique [0002] Until 2018, the highest efficiency of perovskite photovoltaic cells has exceeded 23% (Solar cell efficiency table, https: / / www.nrel.gov / pv / assets / images / efficiency-chart-20180716.jpg), in the process of commercial development In , stability has received great attention. In order to improve the efficiency and stability of battery devices, in addition to preparing high-quality perovskite photosensitive layers, appropriate interface modification and passivation (including electron / hole transport interface layer preparation, doping and related interface modification, etc.) It is very important in the process of device preparation and research. [0003] At present, many achievements on interface modification and passivation of perovskite photosensitive layers have been reported at home and abroad (Adv. Mater...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44
CPCH10K30/10H10K30/00H10K30/88Y02E10/549
Inventor 秦平力吴彤王正春余雪里马良熊伦陈相柏
Owner WUHAN INSTITUTE OF TECHNOLOGY
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