Organic electroluminescent device and preparation method thereof
An electroluminescent device and electroluminescent technology, which can be applied in the fields of electro-solid devices, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve problems such as low luminous efficiency
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preparation example Construction
[0047] see figure 2 , the preparation method of the organic electroluminescent device of an embodiment, comprises the following steps:
[0048] S210 , preparing a hole injection layer 120 on the conductive anode substrate 110 by evaporation using an evaporation technique.
[0049] Wherein, the conductive anode substrate 110 includes a transparent substrate 1102 and an anode layer 1104 prepared on the transparent substrate 1102 . Preferably, the transparent substrate 1102 is glass. The material of the anode layer 1104 is indium tin oxide (ITO). The sheet resistance of the anode layer 1104 is 5˜100Ω / sq.
[0050] The hole injection layer 120 includes a first hole injection auxiliary layer 1202 stacked on the anode layer 1104 and a second hole injection auxiliary layer 1204 stacked on the first hole injection auxiliary layer 1202 .
[0051] The material of the first hole injection auxiliary layer 1202 is iron trifluoride (FeF 3 ), ruthenium trichloride (RuCl 3 ), osmium tri...
Embodiment 1
[0080] The structure of the organic electroluminescent device prepared in this embodiment is: ITO / FeF 3 / HAT-CN / NPB / TPBi:Ir(ppy) 3 / Bphen / LiF / Ag; where, the slash " / " indicates a layered structure, and the colon ":" indicates doping, the same below.
[0081] The preparation of the organic electroluminescent device of this embodiment is as follows:
[0082] (1) Wash the ITO glass substrate sequentially with detergent, deionized water, and ultrasonic for 15 minutes to remove organic pollutants on the glass surface. The square resistance of the ITO conductive glass is 5Ω / sq.
[0083] (2) The first hole injection auxiliary layer and the second hole injection auxiliary layer were sequentially evaporated on the surface of the ITO glass substrate.
[0084] The material of the first hole injection auxiliary layer is FeF 3 , with a thickness of 0.5nm. The first hole injection auxiliary layer is prepared by thermal resistance evaporation technology, and the working pressure is 1×10 ...
Embodiment 2
[0096] The structure of the organic electroluminescent device prepared in this example is: ITO / ReCl 3 / HAT-CN / MeO-TPD / DPVBi / TPBi / CsF / Al.
[0097] The preparation of the organic electroluminescent device of this embodiment is as follows:
[0098] (1) Wash the ITO glass substrate sequentially with detergent, deionized water, and ultrasonic for 15 minutes to remove organic pollutants on the glass surface. The square resistance of the ITO conductive glass is 100Ω / sq.
[0099] (2) The first hole injection auxiliary layer and the second hole injection auxiliary layer were sequentially evaporated on the surface of the ITO glass substrate.
[0100] The material of the first hole injection auxiliary layer is ReCl 3 , with a thickness of 2 nm. The first hole injection auxiliary layer is prepared by thermal resistance evaporation technology, and the working pressure is 1×10 -3 Pa, the evaporation rate is 0.1nm / s.
[0101] The material of the second hole injection auxiliary layer is HA...
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