An interface type multi-state resistive variable memory based on electrode stack and its preparation method
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- XI AN JIAOTONG UNIV
- Publication Date
- 2022-06-07
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Abstract
Description
technical field
[0001] The invention belongs to the field of multi-state storage, and relates to an interface type multi-state resistive memory based on an electrode stack and a preparation method thereof. Background technique
[0002] At this stage, the field of artificial intelligence still uses the traditional von Neumann architecture and implements binary operations. The information transmission process between the memory and the processor still needs to be realized through the bus, which means that the data transmission on the bus will generate a large amount of power. consumption loss. In comparison, the power consumption of the human brain is much lower when processing the same amount of data, so people gradually realize that artificial intelligence based on the von Neumann architecture cannot achieve true brain-like intelligence, only by optimizing the hardware structure. Only brain-like computing can be realized. The human brain nervous system is composed of vario...