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Organic light emission diode device and fabrication method thereof

An electroluminescent device and luminescent technology, which are applied in the manufacture of organic semiconductor devices, electric solid devices, semiconductor/solid state devices, etc., can solve the problems of low device life and low luminous efficiency of organic electroluminescent devices, and achieve strong absorption Electronic properties, high-efficiency injection, and the effect of improving injection efficiency

Inactive Publication Date: 2014-12-17
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] So far, although researchers from all over the world have greatly improved the performance indicators of the device by selecting suitable organic materials and reasonable device structure design, due to the large current driving the light-emitting device, As a result, organic electroluminescent devices have low luminous efficiency and low device life. In order to realize the practical application of organic electroluminescent devices, people are eager to find a light-emitting device structure with small driving current and high luminous efficiency.

Method used

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  • Organic light emission diode device and fabrication method thereof
  • Organic light emission diode device and fabrication method thereof

Examples

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Embodiment 1

[0028] A method for preparing an organic electroluminescent device, comprising the following steps:

[0029] (1) A glass substrate is provided, and a conductive anode is prepared by vacuum sputtering on the surface of the glass substrate. The conductive anode is indium tin oxide (ITO), and a conductive anode is prepared by vacuum sputtering on the surface of the substrate 1, wherein,

[0030] The pressure when sputtering to prepare conductive anode is 1×10 -3 Pa, accelerating voltage 300V, power density 10W / cm 2 , The sputtering thickness is 70nm.

[0031] (2) The first hole injection auxiliary layer is vacuum evaporated on the surface of the conductive anode, and the material of the first hole injection auxiliary layer is molybdenum trioxide (MoO 3 ), the pressure when the first hole injection auxiliary layer is evaporated is 1×10 -3 Pa, the evaporation rate is 0.1nm / s, and the evaporation thickness is 0.5nm.

[0032] (3) The second hole injection auxiliary layer is vac...

Embodiment 2

[0043] A method for preparing an organic electroluminescent device, comprising the following steps:

[0044] (1) A glass substrate is provided, and a conductive anode is prepared by vacuum sputtering on the surface of the glass substrate. The conductive anode is made of indium zinc oxide (IZO), and a conductive anode is prepared by vacuum sputtering on the surface of the substrate. Among them,

[0045] The pressure when sputtering to prepare conductive anode is 1×10 -5 Pa, acceleration voltage is 800V, power density is 40W / cm 2 , the sputtering thickness is 200nm.

[0046] (2) The first hole injection auxiliary layer is vacuum evaporated on the surface of the conductive anode, and the material of the first hole injection auxiliary layer is vanadium pentoxide (V 2 o 5 ), the pressure when the first hole injection auxiliary layer is evaporated is 1×10 -5 Pa, the evaporation rate is 1nm / s, and the evaporation thickness is 5nm.

[0047] (3) The second hole injection auxiliary...

Embodiment 3

[0058] A method for preparing an organic electroluminescent device, comprising the following steps:

[0059] (1) A glass substrate is provided, and a conductive anode is prepared by vacuum sputtering on the surface of the glass substrate. The conductive anode is aluminum zinc oxide (AZO), and a conductive anode is prepared by vacuum sputtering on the surface of the substrate. Among them,

[0060] The pressure when sputtering to prepare conductive anode is 1×10 -4 Pa, accelerating voltage is 600V, power density is 20W / cm 2 , the sputtering thickness is 100nm.

[0061] (2) The first hole injection auxiliary layer is vacuum evaporated on the surface of the conductive anode, and the material of the first hole injection auxiliary layer is tungsten trioxide (WO 3 ), the pressure when the first hole injection auxiliary layer is evaporated is 1×10 -4 Pa, the evaporation rate is 0.1nm / s, and the evaporation thickness is 2nm.

[0062] (3) The second hole injection auxiliary layer is...

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Abstract

The invention discloses an organic light emission diode device. The organic light emission diode device comprises a substrate, a conductive anode, a first hole injection auxiliary layer, a second hole injection auxiliary layer, a hole transmission layer, a light emission layer, an electron transmission layer, an electron injection layer and a cathode which are sequentially laminated, the material of the first hole injection auxiliary layer is molybdenum trioxide, vanadium pentoxide, tungsten trioxide or rhenium oxide, and the material of the second hole injection auxiliary layer is 2,3,6,7,10,11- hexcyano-1,4,5,8,9,12-hexaazatriphenylene. The invention also discloses a fabrication method of the organic light emission diode device. According to the fabrication method of the organic light emission diode device provided by the invention, through additional arrangement of dual hole injection auxiliary layers in the conductive anode and the hole transmission layer, hole injection capability is improved, and the organic light emission diode device prepared according to the fabrication method thereof has low driving current and high luminous efficiency.

Description

technical field [0001] The invention relates to the field of organic electroluminescence, in particular to an organic electroluminescence device and a preparation method thereof. Background technique [0002] Organic light-emitting devices (Organic light-emitting DeVices, referred to as OLEDs) is a multi-layer light-emitting device using organic light-emitting materials, including sequentially stacked anode layer, hole injection layer, hole transport layer, light-emitting layer, electron transport layer layer and cathode. The luminescent principle of OLED is based on the action of an external electric field, electrons are injected from the cathode to the lowest unoccupied molecular orbital (LUMO) of organic matter, and holes are injected from the anode to the highest occupied orbital (HOMO) of organic matter. The light-emitting layers meet, recombine, and form excitons. The excitons migrate under the action of the electric field and transfer energy to the light-emitting mat...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/649H10K50/15H10K50/81H10K2102/00H10K71/00
Inventor 周明杰冯小明张振华王平
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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