Organic light emission diode device and fabrication method thereof

An electroluminescent device and luminescent technology, which are applied in the manufacture of organic semiconductor devices, electric solid devices, semiconductor/solid state devices, etc., can solve the problems of low device life and low luminous efficiency of organic electroluminescent devices, and achieve strong absorption Electronic properties, high-efficiency injection, and the effect of improving injection efficiency

Inactive Publication Date: 2014-12-17

OCEANS KING LIGHTING SCI&TECH CO LTD +2

10 Cites 4 Cited by

AI-Extracted Technical Summary

Problems solved by technology

[0003] So far, although researchers from all over the world have greatly improved the performance indicators of the device by selecting suitable organic materials and reasonable device structure design, due to the large current driving the light-emitting device, As a result, orga...

Abstract

The invention discloses an organic light emission diode device. The organic light emission diode device comprises a substrate, a conductive anode, a first hole injection auxiliary layer, a second hole injection auxiliary layer, a hole transmission layer, a light emission layer, an electron transmission layer, an electron injection layer and a cathode which are sequentially laminated, the material of the first hole injection auxiliary layer is molybdenum trioxide, vanadium pentoxide, tungsten trioxide or rhenium oxide, and the material of the second hole injection auxiliary layer is 2,3,6,7,10,11- hexcyano-1,4,5,8,9,12-hexaazatriphenylene. The invention also discloses a fabrication method of the organic light emission diode device. According to the fabrication method of the organic light emission diode device provided by the invention, through additional arrangement of dual hole injection auxiliary layers in the conductive anode and the hole transmission layer, hole injection capability is improved, and the organic light emission diode device prepared according to the fabrication method thereof has low driving current and high luminous efficiency.

Application Domain

Solid-state devicesSemiconductor/solid-state device manufacturing +1

Technology Topic

Organic electroluminescenceElectron transmission +10

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Examples

Experimental program(4)
Comparison scheme(1)
Effect test(1)

Example Embodiment

[0027] Example 1

[0028] A preparation method of an organic electroluminescence device, including the following operation steps:

[0029] (1) Provide a glass substrate, use vacuum sputtering to prepare a conductive anode on the surface of the glass substrate, use indium tin oxide (ITO) as the conductive anode, and prepare a conductive anode on the surface of the substrate 1 by vacuum sputtering.

[0030] The pressure when preparing a conductive anode by sputtering is 1×10 -3 Pa, acceleration voltage is 300V, power density is 10W/cm 2 , The sputtering thickness is 70nm.

[0031] (2) The first hole injection auxiliary layer is vacuum-evaporated on the surface of the conductive anode. The material of the first hole injection auxiliary layer is molybdenum trioxide (MoO 3 ), the pressure of the first hole injection auxiliary layer during evaporation is 1×10 -3 Pa, the vapor deposition rate is 0.1 nm/s, and the vapor deposition thickness is 0.5 nm.

[0032] (3) The second hole injection auxiliary layer is vacuum-evaporated on the surface of the first hole injection auxiliary layer. The material of the second hole injection auxiliary layer is 2,3,6,7,10,11-hexacyano-1 ,4,5,8,9,12-hexaazatriphenylene (HAT-CN), the pressure of the second hole injection auxiliary layer during evaporation is 1×10 -3 Pa, the vapor deposition rate is 0.1 nm/s, and the vapor deposition thickness is 5 nm.

[0033] (4) A hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer and a cathode are sequentially vapor-deposited on the surface of the second hole injection auxiliary layer to obtain an organic electroluminescent device, wherein,

[0034] The hole transport layer is made of NPB, and the pressure used during evaporation is 1×10 -3 Pa, the vapor deposition rate is 0.1 nm/s, and the vapor deposition thickness is 20 nm.

[0035] The light-emitting layer material is Ir(ppy) 3 Mixture with TPBi, Ir(ppy) 3 The mass ratio to TPBi is 10:100, and the pressure used during evaporation is 1×10 -3 Pa, the evaporation rate is 0.1nm/s, and the evaporation thickness is 12nm;

[0036] The material of the electron transport layer is TPBi, and the pressure used during evaporation is 1×10 -3 Pa, the evaporation rate is 0.1nm/s, and the evaporation thickness is 20nm;

[0037] The material of the electron injection layer is LiF, and the pressure used during vapor deposition is 1×10 -3 Pa, the evaporation rate is 0.1nm/s, and the evaporation thickness is 1nm;

[0038] The material of the cathode is Ag, and the pressure used during vapor deposition is 1×10 -3 Pa, the evaporation rate is 2nm/s, and the evaporation thickness is 70nm.

[0039] figure 1 It is a schematic diagram of the structure of the organic electroluminescent device prepared in this embodiment. The organic electroluminescent device prepared in this embodiment includes a substrate 1, a conductive anode 2, a first hole injection auxiliary layer 2, and a second hole stacked in sequence. The injection auxiliary layer 3, the hole injection layer 4, the hole transport layer 5, the light emitting layer 6, the electron transport layer 7, the electron injection layer 8, and the cathode 9. The specific structure is expressed as:

[0040] Glass/ITO/MoO 3 /HAT-CN/NPB/ Ir(ppy) 3 :TPBi/TPBi/LiF/Ag.

[0041] Among them, after the organic electroluminescent device 10 is prepared, it is tested with a high vacuum coating system. When the starting voltage is 3.3 V, the luminous brightness of the organic electroluminescent device 10 is 1000 cd/m 2 At this time, the luminous efficiency of the organic electroluminescent device 10 was 15.1 lm/W.

Example Embodiment

[0042] Example 2

[0043] A preparation method of an organic electroluminescence device, including the following operation steps:

[0044] (1) Provide a glass substrate, use vacuum sputtering to prepare a conductive anode on the surface of the glass substrate, use indium zinc oxide (IZO) as the conductive anode, and prepare a conductive anode on the surface of the substrate by vacuum sputtering.

[0045] The pressure when preparing a conductive anode by sputtering is 1×10 -5 Pa, acceleration voltage is 800V, power density is 40W/cm 2 , The sputtering thickness is 200nm.

[0046] (2) The first hole injection auxiliary layer is vacuum-evaporated on the surface of the conductive anode. The material of the first hole injection auxiliary layer is vanadium pentoxide (V 2 O 5 ), the pressure of the first hole injection auxiliary layer during evaporation is 1×10 -5 Pa, the vapor deposition rate is 1 nm/s, and the vapor deposition thickness is 5 nm.

[0047] (3) The second hole injection auxiliary layer is vacuum-evaporated on the surface of the first hole injection auxiliary layer. The material of the second hole injection auxiliary layer is 2,3,6,7,10,11-hexacyano-1 ,4,5,8,9,12-hexaazatriphenylene (HAT-CN), the pressure of the second hole injection auxiliary layer during evaporation is 1×10 -5 Pa, the vapor deposition rate is 1 nm/s, and the vapor deposition thickness is 10 nm.

[0048] (4) A hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer and a cathode are sequentially vapor-deposited on the surface of the second hole injection auxiliary layer to obtain an organic electroluminescent device, wherein,

[0049] The hole transport layer is made of TPD, and the pressure used during evaporation is 1×10 -5 Pa, the evaporation rate is 1 nm/s, and the evaporation thickness is 60 nm.

[0050] The light-emitting layer material is Ir(MDQ) 2 (acac) and NPB mixture, Ir(MDQ) 2 The mass ratio of (acac) to NPB is 15:100, and the pressure used during evaporation is 1×10 -5 Pa, the evaporation rate is 1nm/s, and the evaporation thickness is 20nm;

[0051] The material of the electron transport layer is Bphen, and the pressure used during evaporation is 1×10 -5 Pa, the evaporation rate is 1nm/s, and the evaporation thickness is 60nm;

[0052] The material of the electron injection layer is CsF, and the pressure used during vapor deposition is 1×10 -5 Pa, the evaporation rate is 0.2nm/s, and the evaporation thickness is 2nm;

[0053] The material of the cathode is Ag, and the pressure used during vapor deposition is 1×10 -5 Pa, the vapor deposition rate is 5 nm/s, and the vapor deposition thickness is 200 nm.

[0054] The organic electroluminescent device prepared in this embodiment includes a substrate, a conductive anode, a first hole injection auxiliary layer, a second hole injection auxiliary layer, a hole injection layer, a hole transport layer, a light emitting layer, and electrons which are sequentially stacked. Transport layer, electron injection layer and cathode. The specific structure is expressed as:

[0055] Glass/IZO/V 2 O 5 /HAT-CN/ TPD/Ir(MDQ) 2 (acac): NPB/Bphen/CsF/Al.

[0056] After the organic electroluminescence device is prepared, it is tested with a high vacuum coating system. When the starting voltage is 3.6 V, the luminescence brightness of the organic electroluminescence device is 1000cd/m 2 At this time, the luminous efficiency of the organic electroluminescent device was 12.4lm/W.

Example Embodiment

[0057] Example 3

[0058] A preparation method of an organic electroluminescence device, including the following operation steps:

[0059] (1) Provide a glass substrate, use vacuum sputtering to prepare a conductive anode on the surface of the glass substrate, use aluminum zinc oxide (AZO) as the conductive anode, and prepare a conductive anode on the surface of the substrate by vacuum sputtering, among which,

[0060] The pressure when preparing a conductive anode by sputtering is 1×10 -4 Pa, acceleration voltage is 600V, power density is 20W/cm 2 , The sputtering thickness is 100nm.

[0061] (2) The first hole injection auxiliary layer is vacuum-evaporated on the surface of the conductive anode. The material of the first hole injection auxiliary layer is tungsten trioxide (WO 3 ), the pressure of the first hole injection auxiliary layer during evaporation is 1×10 -4 Pa, the vapor deposition rate is 0.1 nm/s, and the vapor deposition thickness is 2 nm.

[0062] (3) The second hole injection auxiliary layer is vacuum-evaporated on the surface of the first hole injection auxiliary layer. The material of the second hole injection auxiliary layer is 2,3,6,7,10,11-hexacyano-1 ,4,5,8,9,12-hexaazatriphenylene (HAT-CN), the pressure of the second hole injection auxiliary layer during evaporation is 1×10 -4 Pa, the vapor deposition rate is 0.5 nm/s, and the vapor deposition thickness is 20 nm.

[0063] (4) A hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer and a cathode are sequentially vapor-deposited on the surface of the second hole injection auxiliary layer to obtain an organic electroluminescent device, wherein,

[0064] The hole transport layer is made of 2-TNATA, and the pressure used during evaporation is 1×10 -4 Pa, the vapor deposition rate is 0.5 nm/s, and the vapor deposition thickness is 40 nm.

[0065] The material of the light-emitting layer is DCJTB and Alq 3 The mixture of DCJTB and Alq 3 The mass ratio is 1:100, and the pressure used during evaporation is 1×10 -4 Pa, the evaporation rate is 0.5nm/s, and the evaporation thickness is 1nm;

[0066] The material of the electron transport layer is BCP, and the pressure used during evaporation is 1×10 -4 Pa, the evaporation rate is 0.5nm/s, and the evaporation thickness is 40nm;

[0067] The material of the electron injection layer is CsF, and the pressure used during vapor deposition is 1×10 -4 Pa, the evaporation rate is 0.1nm/s, and the evaporation thickness is 1nm;

[0068] The material of the cathode is Al-Mg alloy, and the pressure used during vapor deposition is 1×10 -4 Pa, the vapor deposition rate is 2nm/s, and the vapor deposition thickness is 100nm.

[0069] The organic electroluminescent device prepared in this embodiment includes a substrate, a conductive anode, a first hole injection auxiliary layer, a second hole injection auxiliary layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection Layer and cathode. The specific structure is expressed as:

[0070] Glass/AZO/WO 3 /HAT-CN/2-TNATA/DCJTB: Alq 3 /BCP/CsF/Al-Mg.

[0071] After the organic electroluminescent device is prepared, it is tested with a high vacuum coating system. When the starting voltage is 3.4 V, the luminous brightness of the organic electroluminescent device is 1000cd/m 2 At this time, the luminous efficiency of the organic electroluminescent device was 11.2lm/W.

PUM

Property	Measurement	Unit
Thickness	0.5 ~ 5.0	nm
Thickness	2.0 ~ 20.0	nm
Thickness	1.0 ~ 20.0	nm

Description & Claims & Application Information

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Classification and recommendation of technical efficacy words

Improve injection ability

Organic compound and application thereof

PendingCN113549023ALower the barrierImprove injection ability

Owner:WUHAN TIANMA MICRO ELECTRONICS CO LTD

Organic light emitting device and preparation method thereof

InactiveCN104466011AImprove injection abilityavoid leakage current

Owner:OCEANS KING LIGHTING SCI&TECH CO LTD +2

Organic light emission diode device and fabrication method thereof

AI-Extracted Technical Summary

Problems solved by technology

Abstract

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Description & Claims & Application Information

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