Organic light emission diode device and fabrication method thereof
An electroluminescent device and luminescent technology, which are applied in the manufacture of organic semiconductor devices, electric solid devices, semiconductor/solid state devices, etc., can solve the problems of low device life and low luminous efficiency of organic electroluminescent devices, and achieve strong absorption Electronic properties, high-efficiency injection, and the effect of improving injection efficiency
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[0027] Example 1
[0028] A preparation method of an organic electroluminescence device, including the following operation steps:
[0029] (1) Provide a glass substrate, use vacuum sputtering to prepare a conductive anode on the surface of the glass substrate, use indium tin oxide (ITO) as the conductive anode, and prepare a conductive anode on the surface of the substrate 1 by vacuum sputtering.
[0030] The pressure when preparing a conductive anode by sputtering is 1×10 -3 Pa, acceleration voltage is 300V, power density is 10W / cm 2 , The sputtering thickness is 70nm.
[0031] (2) The first hole injection auxiliary layer is vacuum-evaporated on the surface of the conductive anode. The material of the first hole injection auxiliary layer is molybdenum trioxide (MoO 3 ), the pressure of the first hole injection auxiliary layer during evaporation is 1×10 -3 Pa, the vapor deposition rate is 0.1 nm / s, and the vapor deposition thickness is 0.5 nm.
[0032] (3) The second hole injection ...
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[0042] Example 2
[0043] A preparation method of an organic electroluminescence device, including the following operation steps:
[0044] (1) Provide a glass substrate, use vacuum sputtering to prepare a conductive anode on the surface of the glass substrate, use indium zinc oxide (IZO) as the conductive anode, and prepare a conductive anode on the surface of the substrate by vacuum sputtering.
[0045] The pressure when preparing a conductive anode by sputtering is 1×10 -5 Pa, acceleration voltage is 800V, power density is 40W / cm 2 , The sputtering thickness is 200nm.
[0046] (2) The first hole injection auxiliary layer is vacuum-evaporated on the surface of the conductive anode. The material of the first hole injection auxiliary layer is vanadium pentoxide (V 2 O 5 ), the pressure of the first hole injection auxiliary layer during evaporation is 1×10 -5 Pa, the vapor deposition rate is 1 nm / s, and the vapor deposition thickness is 5 nm.
[0047] (3) The second hole injection auxilia...
Example Embodiment
[0057] Example 3
[0058] A preparation method of an organic electroluminescence device, including the following operation steps:
[0059] (1) Provide a glass substrate, use vacuum sputtering to prepare a conductive anode on the surface of the glass substrate, use aluminum zinc oxide (AZO) as the conductive anode, and prepare a conductive anode on the surface of the substrate by vacuum sputtering, among which,
[0060] The pressure when preparing a conductive anode by sputtering is 1×10 -4 Pa, acceleration voltage is 600V, power density is 20W / cm 2 , The sputtering thickness is 100nm.
[0061] (2) The first hole injection auxiliary layer is vacuum-evaporated on the surface of the conductive anode. The material of the first hole injection auxiliary layer is tungsten trioxide (WO 3 ), the pressure of the first hole injection auxiliary layer during evaporation is 1×10 -4 Pa, the vapor deposition rate is 0.1 nm / s, and the vapor deposition thickness is 2 nm.
[0062] (3) The second hole inje...
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