Organic light-emitting device and composite anode and manufacturing method thereof
A technology of organic light-emitting devices and composite anodes, which is applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., can solve the problems of poor thermal conductivity, poor electrical conductivity, shortened life, etc., and improve the thermal conductivity and thermal conductivity of OLEDs. The effect of good performance and low resistivity
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Embodiment 1
[0037] Such as image 3 As shown, an embodiment of a top-emitting organic light-emitting device includes sequentially arranged: a glass substrate 11, an aluminum bonding layer 12, a copper conductive layer 13, a hole injection layer 14, a hole transport layer 15, an electron transport and a light-emitting layer 16. Electron injection layer 17, transparent cathode layer 18. The hole injection layer 14 is formed by treating the copper surface with nitrogen and oxygen mixed gas plasma.
[0038] The production method is: use neutral detergent, acetone and ethanol, clean the glass substrate by ultrasonic cleaning, blow dry with nitrogen, and then prepare an Al film with a thickness of about 50-100nm by thermal evaporation or sputtering. Prepare a Cu film with a thickness of about 50-100nm on the bonding layer by thermal evaporation or sputtering, then place the sample in a radio frequency plasma generator, and pre-evacuate the vacuum chamber to a degree of 5×10 -4 Pa, then filled...
Embodiment 2
[0043] Such as Figure 4 As shown, an embodiment of a top-emitting organic light-emitting device includes sequentially arranged: a glass substrate 19, a silicon nitride bonding layer 20, a copper conductive layer 21, a hole injection layer 22, a hole transport layer 23, an electron transport layer and Light emitting layer 24 electron injection layer 25 , transparent cathode layer 26 . The hole injection layer 22 is formed by treating the copper surface with hydrogen sulfide plasma.
[0044] The production method is: use neutral detergent, acetone and ethanol, clean the glass substrate by ultrasonic cleaning, blow dry with nitrogen, and then prepare a silicon nitride film with a thickness of about 50nm by PECVD, and bond it to silicon nitride. On the layer, a Cu film with a thickness of about 10-200nm was prepared by thermal evaporation or sputtering, and then the sample was placed in a radio frequency plasma generator, and the vacuum chamber was pre-evacuated to a degree of 5...
Embodiment 3
[0048] Such as Figure 5 As shown, an embodiment of a top-emitting organic light-emitting device includes sequentially arranged: a glass substrate 27, a copper-aluminum alloy layer 28, a hole injection layer 29, a hole transport layer 30, an electron transport and light-emitting layer 31, and an electron injection layer 32. Transparent cathode layer 33. The hole injection layer 29 is formed by oxygen plasma treatment on the surface of the copper aluminum alloy.
[0049] The production method is as follows: use neutral detergent, acetone and ethanol, clean the glass substrate by ultrasonic cleaning, blow dry with nitrogen, and then prepare a copper-aluminum alloy layer with a thickness of about 50-100nm by magnetron sputtering. On the copper-aluminum alloy bonding layer, a Cu film with a thickness of about 50-100nm was prepared by thermal evaporation or sputtering, and then the sample was placed in a radio frequency plasma generator, and the vacuum chamber was pre-evacuated to...
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