thin film transistor

Abstract

The invention relates to a thin film transistor, which comprises: an insulating substrate; a gate, the gate is arranged on the surface of the insulating substrate; a gate insulating layer, the gate insulating layer is arranged on the gate A surface away from the insulating substrate; a carbon nanotube structure, the carbon nanotube structure is disposed on the surface of the gate insulating layer away from the grid; wherein, the carbon nanotube structure includes at least one carbon nanotube, the carbon nanotube It includes a semiconducting carbon nanotube segment and two metallic carbon nanotube segments respectively connected to the two ends of the semiconducting carbon nanotube segment, and the two metallic carbon nanotube segments serve as source and drain respectively, the Semiconducting carbon nanotube segments serve as channels.

Description

technical field [0001] The invention relates to the technical field of carbon nanotubes, in particular to a thin film transistor prepared by using carbon nanotubes. Background technique [0002] Carbon nanotubes have attracted extensive attention due to their excellent properties such as high Young's modulus, tensile strength, and high thermal conductivity. [0003] In the single-walled carbon nanotubes prepared by the traditional chemical vapor deposition method, the ratio of metallic carbon nanotubes and semiconducting carbon nanotubes is about 1:2. In order to obtain semiconducting carbon nanotubes with higher purity, in the past two decades, after continuous research on the thermodynamics and kinetics of carbon nanotubes, people have been able to grow semiconducting carbon with a purity of 97% by CVD. nanotube. [0004] However, it is still not possible to directly grow semiconducting carbon nanotubes with higher purity. At the same time, in the prior art, the chirali...

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Problems solved by technology

[0004] However, it is still not possible to directly grow semiconducting carbon nanotubes with higher purity.

At the same time, in the prior art, the chirality of carbon nanotubes cannot be arbitrarily changed during the growth of carbon nanotubes, that is, carbon nanotubes cannot form carbon nanotubes with alternating semiconducting carbon nanotube segments and metallic carbon nanotube segments as required during the growth process. nanotube

At the same time, it is impossible to apply the above-mentioned carbon nanotubes with alternating semiconducting carbon nanotube segments and metallic carbon nanotube segments to carbon nanotube structures and applications of carbon nanotube structures, such as thin film transistors, photodetectors, Photoelectric conversion module, etc.

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