ITO film and preparation method thereof as well as LED chip and preparation method thereof

Abstract

The invention provides an ITO film and a preparation method thereof as well as an LED chip and a preparation method thereof. The preparation method of the ITO film at least comprises the steps that 1) oxygen of high flow is transmitted into a reaction chamber, so that an ITO interfacial layer of high work function and a preset thickness is pre-deposited on a P-GaN layer; and 2) the flow of the oxygen transmitted to the reaction chamber is gradually reduced, so that an ITO current diffusion layer is deposited on the ITO interfacial layer. The preparation method of the ITO film can be used to reduce the driving voltage of the LED chip, and improve the technical efficiency and quality.

Description

technical field [0001] The invention belongs to the technical field of semiconductor processing, and in particular relates to an ITO thin film and a preparation method thereof, an LED chip and a preparation method thereof. Background technique [0002] In the process of LED chip manufacturing, because the contact between P-GaN layer and P-type ohmic metal electrode will cause high contact resistance and low transmittance, the driving voltage of LED chip will increase, and the higher driving voltage will make LED During the use of the chip, a large amount of heat is generated, which not only causes energy loss, but also affects the reliability of the LED chip, thereby affecting the overall performance of the LED chip. [0003] In practical applications, compared with traditional metal films, ITO films have the advantages of high transmittance, good electrical conductivity, wear resistance, corrosion resistance, etc., and have good adhesion to GaN layers. Therefore, ITO films ...

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Problems solved by technology

[0006] First, since the annealing process is added after the deposition of the ITO interface layer, the process flow is increased, resulting in an increase in the required process time and low process efficiency; and because the annealing process needs to be in contact with the atmospheric environment with more impurities, it is possible It affects the ITO current spreading layer, resulting in poor process quality;

[0007] Second, although the ITO interface layer can reduce the interface resistance between the ITO film and the P-GaN layer, the ITO interface layer and the ITO current diffusion layer with different compositions will introduce new interface resistance, which is not conducive to reducing the driving voltage of the LED chip.

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