Nano material, preparation method thereof and quantum dot light-emitting diode

A technology of quantum dot luminescence and nanomaterials, which is applied in the field of quantum dot light-emitting devices, can solve the problems of device efficiency and life expectancy, and achieve the effects of suppressing Auger recombination, improving recombination efficiency, and life expectancy

Pending Publication Date: 2022-01-18
TCL CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] In view of the above deficiencies in the prior art, the purpose of the present invention is to provide a nanomaterial and its preparation method and quantum dot light-emitting diodes, aiming to solve the problem that the efficiency and life of the existing devices still need to be improved

Method used

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  • Nano material, preparation method thereof and quantum dot light-emitting diode
  • Nano material, preparation method thereof and quantum dot light-emitting diode

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Embodiment

[0079] 1. Preparation of nanomaterials

[0080] 1) Add 10 mmol of tetramethylammonium hydroxide to 30 ml of 2-methoxyethanol, and heat in a water bath for 20 min;

[0081] 2), add 6mmol of zinc acetate and 2mmol of aluminum acetate, and stir for 3h to obtain a clear solution, and make aluminum-doped zinc oxide nanoparticles;

[0082] 3), then add 2mmol of aluminum acetate, ultrasonic 45min, and pause every 2min for 5s, wrap the upper shell on the nanoparticles, and obtain nanomaterials with a core-shell structure;

[0083] 4), washing the obtained nanomaterials with ethyl acetate and ethanol, and finally dissolving the nanomaterials in the ethanol solution.

[0084] 2. Preparation of quantum dot light-emitting diodes

[0085] 1) Evaporate ITO on the substrate as the first electrode, the thickness of ITO is 40nm, and then clean it with UVO (ultraviolet light ozone) for 15 minutes to improve the surface wettability while cleaning the surface;

[0086] 2) Spin-coat a layer of ...

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Abstract

The invention discloses a nano material, a preparation method thereof and a quantum dot light emitting diode. The nano material has a core-shell structure, and the core of the nano material comprises ZnO nano particles and metal elements doped in the ZnO nano particles; and the shell of the nanometer material comprises a metal oxide. By doping other metal elements in the zinc oxide nanoparticles and wrapping a layer of metal oxide shell, the energy level structure and the electron transmission efficiency of the whole nano material can be adjusted, so that the energy levels of the quantum dots and the nano material in the device are more matched, and the quantum dots and the nano material are more uniform. Transfer of electrons in the quantum dot light-emitting layer to the electron transport layer is reduced, and the electron-hole recombination efficiency of the quantum dot light-emitting layer is improved; electron hole injection of the device is more balanced, charge accumulation of the quantum dot light-emitting layer is reduced, Auger recombination is inhibited, and the radiative recombination efficiency of electron holes is improved; therefore, the zinc oxide nanoparticles are more stable, and the overall stability of the device is improved.

Description

technical field [0001] The invention relates to the field of quantum dot light-emitting devices, in particular to a nanometer material, a preparation method thereof and a quantum dot light-emitting diode. Background technique [0002] Quantum dot electroluminescent display technology has become the best candidate for the next generation of display technology due to its advantages such as adjustable wavelength, high color saturation, high material stability, and low manufacturing cost. After nearly two decades of development, the external quantum efficiency of quantum dot light-emitting diodes has increased from 0.01% to over 20%. In terms of device efficiency, quantum dot light-emitting diodes (QLEDs) are already quite close to organic light-emitting diodes (OLEDs). However, despite the above-mentioned advantages of quantum dot devices, the performance of the current devices has not yet fully met the requirements of industrialization, especially for blue QLED devices. [00...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54C01G9/02B01J13/06B82Y10/00B82Y30/00B82Y40/00
CPCC01G9/02B01J13/06B82Y10/00B82Y30/00B82Y40/00H10K50/165H10K50/166H10K2102/101H10K50/115H10K2102/331H10K50/15H10K71/00
Inventor 马兴远徐威张建新
Owner TCL CORPORATION
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