Organic light-emitting device and production method thereof
An electroluminescent device and electroluminescent technology, which are applied in the fields of electro-solid devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as low luminous efficiency, and achieve the goal of improving luminous efficiency, increasing transmission rate, and reducing potential barriers Effect
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[0039] Please also see figure 2 , the preparation method of the organic electroluminescent device 100 of one embodiment, it comprises the following steps:
[0040] Step S110 , sequentially vapor-depositing the hole injection layer 20 , the first hole transport layer 32 , the first light emitting layer 34 and the first electron transport layer 36 on the surface of the anode.
[0041] The anode 10 is indium tin oxide glass (ITO), aluminum zinc oxide glass (AZO) or indium zinc oxide glass (IZO), preferably ITO.
[0042] In this embodiment, before the hole injection layer 20 is formed on the surface of the anode 10, the anode 10 is pretreated. The pretreatment includes: performing photolithography on the anode 10, cutting it into the required size, using detergent, deionized Water, acetone, ethanol, and isopropanone were each ultrasonically cleaned for 15 minutes to remove organic pollutants on the surface of the anode 10 .
[0043] The hole injection layer 20 is formed on the ...
Embodiment 1
[0061] The structure prepared in this example is ITO glass / MoO 3 / TAPC / Alq 3 / Bphen / CuPc:Au:F4-TCNQ / TAPC / Alq 3 / TAZ / LiF / Ag organic electroluminescent devices.
[0062] First carry out photolithography treatment on ITO, cut it into the required size, and then use detergent, deionized water, acetone, ethanol, and isopropanol to sonicate for 15 minutes each to remove organic pollutants on the glass surface; evaporate the hole injection layer , the material is MoO 3 , the thickness is 30nm; evaporate the first hole transport layer, the material is TAPC, the thickness is 45nm; evaporate the first light-emitting layer, the material is Alq 3 , the thickness is 20nm; evaporate the first electron transport layer, the material is Bphen, the thickness is 150nm; evaporate the metal oxide layer, the material is MoO 3 , with a thickness of 10nm; vapor-deposited ternary doped layer, the material includes CuPc and Au and F4-TCNQ doped in CuPc, the mass ratio of Au to CuPc is 1:10, and the...
Embodiment 2
[0067] The structure prepared in this example is AZO / V 2 o 5 / NPB / ADN / TPBi / V 2 o 5 / CuPc:Al:1T-NATA / TAPC / ADN / TPBi / CsN 3 / Pt organic electroluminescent devices.
[0068] First, the AZO glass substrate was washed with detergent, deionized water, and ultrasonic for 15 minutes to remove organic pollutants on the glass surface; the hole injection layer was prepared by evaporation, and the material was V 2 o 5 , the thickness is 80nm; the first hole transport layer is prepared by evaporation, the material is NPB, and the thickness is 60nm; the first light-emitting layer is prepared by evaporation, the material is ADN, and the thickness is 5nm; the first electron transport layer is prepared by evaporation, and the material is TPBi, with a thickness of 200nm; the charge generation layer prepared by evaporation: it consists of a metal oxide layer and a ternary doped layer, and the material of the metal oxide layer is V 2 o 5 , the thickness is 5nm, the material of the ternary do...
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