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Quantum dot electroluminescent device and preparation method thereof

A technology for electroluminescent devices and quantum dots to emit light, which is applied in the fields of electro-solid devices, semiconductor/solid-state device manufacturing, and electrical components. The effect of improving and reducing exciton quenching and improving device performance

Inactive Publication Date: 2019-09-10
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since this kind of material is an insulating material, its thickness must be accurately controlled, and there are certain restrictions on the improvement of device performance, which greatly limits further applications.
For the defect states on the QD surface, the commonly used method is solution ligand replacement, which can effectively passivate surface defects, but cannot passivate the ligand shedding due to heat treatment.

Method used

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  • Quantum dot electroluminescent device and preparation method thereof
  • Quantum dot electroluminescent device and preparation method thereof
  • Quantum dot electroluminescent device and preparation method thereof

Examples

Experimental program
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Embodiment 1

[0031] In this embodiment, the quantum dots are red light quantum dots, and the preparation process of the quantum dot electroluminescent device is as follows:

[0032] 1. Cleaning and drying of ITO substrate

[0033] The size of ITO glass cube is 15mm×15mm. The following steps are used to clean ITO glass: acetone → isopropanol → special detergent for micron-sized semiconductors (a mixed solution of special detergent for micron-sized semiconductors and deionized water with a volume ratio of 1:100) → twice deionized water → new Ultrasonic cleaning with isopropanol for 10 minutes each, and drying in a constant temperature oven for two hours for later use. Electron transport layer preparation

[0034] Spin-coat ZnO on ITO glass as an electron transport layer with a homogenizer at a speed of 3000 rpm, then heat-treat it in a glove box at 180°C for 12min, and the thickness is 60nm after cooling.

[0035] 2. Preparation of quantum dot luminescent layer

[0036] The red light CdS...

Embodiment 2

[0053] In this embodiment, a method for improving the performance of quantum dot light-emitting diode devices by replacing quantum dot ligands with ligands in situ, other parameters are the same as those in Embodiment 1. The difference is that the implemented quantum dots are green light CdS / ZnS quantum dots.

[0054] The current density-voltage-brightness curve of the quantum dot light-emitting device of this embodiment is as follows Figure 2a-2b as shown, Figure 2a And the green light standard in Figure 3-6 refers to the quantum dot light-emitting device obtained without in-situ ligand replacement, other preparation conditions are the same as in Example 2, and the maximum brightness of the green light quantum dot light-emitting standard is 8.9×10 3 , the maximum brightness of the device after in situ ligand replacement is 9.2×10 3 . Compared with standard parts, it achieves 10000cd / m 2 The current density is 30.8mA / cm 2 , after in situ ligand replacement, 10000cd / m 2...

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Abstract

The invention discloses a quantum dot electroluminescent device and a preparation method thereof. In order to reduce the hole injection barrier of a quantum dot light emitting diode device, small molecular materials containing polar coordination groups of lone pair electrons, such as materials containing amino groups, mercapto groups or phosphorus groups, are dissolved in a proton solvent throughin-situ ligand replacement and the obtained product is applied to a filmed quantum dot layer after heat treatment during the preparation of the quantum dot light emitting diode device. Because of thepolar coordination groups (amino groups, mercapto groups and phosphorus groups) of lone pair electrons, a larger interface dipole is introduced, the hole injection barrier is reduced, the hole electron flow is balanced, and the device performance is improved. The surface defects of the quantum dot film are passivated, and exciton quenching is reduced. The method has the characteristics of wide applicability, high efficiency and simplicity.

Description

technical field [0001] The invention relates to the field of preparation of quantum dot electroluminescent devices, in particular to a quantum dot electroluminescent device and a preparation method thereof. Background technique [0002] Quantum dot (Quantum dot, QD) is a nanomaterial whose radius is smaller than or close to the Bohr exciton radius. It has a quantum confinement effect, emits fluorescence after being excited, has the characteristics of wide excitation peak, narrow emission peak, and adjustable spectrum. Based on quantum The QLED (Quantum dot Light-Emitting Diode) made of dots has the characteristics of high color purity, solution processability, and low operating voltage. [0003] Quantum dots are composed of inorganic core layer and surface organic ligands. The introduction of organic ligands is to reduce the surface defects of quantum dots, increase the solution stability of quantum dots, introduce long-chain organic molecular ligands, and the common binding...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K50/11H10K71/00
Inventor 王坚寸阳珂王娟红黎佳立江从彪罗宇俞丹牡曹镛
Owner SOUTH CHINA UNIV OF TECH
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