Organic electroluminescence device and preparation method thereof
An electroluminescent device and luminescence technology, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as poor refractive index, low light extraction performance, total reflection loss, etc., and achieve improved hole injection Efficiency, improvement of luminous efficiency, and the effect of improving conductivity
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[0036] The preparation method of the organic electroluminescence device 100 of an embodiment, it comprises the following steps:
[0037] Step S110 , preparing the scattering layer 20 on the surface of the glass substrate 10 by electron beam evaporation.
[0038] The scattering layer 20 is formed on one side surface of the glass substrate 10 . The scattering layer 20 includes a metal material, a hole transport material and a luminescent material. The scattering layer 20 is prepared on the surface of the glass substrate 10 by thermal resistance evaporation. The work function of the metal material is -2.0eV~-3.5eV, and the The hole transport material is selected from 1,1-bis[4-[N,N'-bis(p-tolyl)amino]phenyl]cyclohexane (TAPC), 4,4',4''-tris( At least one of carbazol-9-yl)triphenylamine (TCTA), N,N'-(1-naphthyl)-N,N'-diphenyl-4,4'-biphenylenediamine (NPB) , the material of the luminescent material layer is selected from: 4-(dinitrile methyl)-2-butyl-6-(1,1,7,7-tetramethyljulones...
Embodiment 1
[0059] The structure prepared in this example is glass substrate / Mg:Alq 3 :TAPC / ITO / MoO 3 / NPB / Alq 3 / TAZ / CsF / Ag organic electroluminescent device, in this embodiment and the following embodiments, " / " indicates a layer, and ":" indicates doping.
[0060] The glass substrate is N-LASF44. After rinsing the glass substrate with distilled water and ethanol, soak it in isopropanol for one night. Prepare the scattering layer on the glass substrate, the scattering layer includes metal materials, hole transport materials and luminescent materials, and prepare the scattering layer on the surface of the glass substrate by thermal resistance evaporation, the material is Mg:Alq 3 : TAPC, Mg, Alq 3 The mass ratio to TAPC is 5:3:1, and the thickness is 300nm. Then ITO is prepared on the scattering layer with a thickness of 100nm, which is prepared by magnetron sputtering; the hole injection layer is prepared by evaporation: the material is MoO 3 , with a thickness of 40nm; the hole tr...
Embodiment 2
[0067] The structure prepared in this example is glass substrate / Sr:DCJTB:TCTA / IZO / V 2 o 5 / NPB / DCJTB / TPBi / Cs 2 CO 3 / Al organic electroluminescent devices.
[0068] The glass substrate is N-LAF36. After rinsing the glass substrate with distilled water and ethanol, soak it in isopropanol for one night to prepare a scattering layer on the glass substrate. The surface of the substrate is prepared by thermal resistance evaporation, and the material is Sr:DCJTB:TCTA, Sr, the mass ratio of DCJTB to TCTA is 1:0.5:1, and the thickness is 80nm. Then IZO is prepared on the scattering layer with a thickness of 80nm, prepared by magnetron sputtering; the hole injection layer is evaporated, and the material is V 2 o 5 , with a thickness of 40nm; evaporated hole transport layer: the material is NPB, with a thickness of 45nm; evaporated luminescent layer: the selected material is DCJTB, with a thickness of 8nm; evaporated electron transport layer, the material is TPBi, with a thickness...
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