Quantum dot light-emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, and electric solid-state devices, etc., can solve the problems of large injection barrier and complicated preparation process of QLED devices, so as to save the preparation cost and simplify the device structure. , Improve the effect of hole injection

Inactive Publication Date: 2016-04-20
TCL CORPORATION
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a quantum dot light-emitting diode and its preparation method, aiming to solve the problem that the existing QLED devices either have a large injection barrier or the preparation process is complicated

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  • Quantum dot light-emitting diode and preparation method thereof
  • Quantum dot light-emitting diode and preparation method thereof
  • Quantum dot light-emitting diode and preparation method thereof

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Embodiment Construction

[0025] The present invention provides a quantum dot light-emitting diode and a preparation method thereof. In order to make the purpose, technical solution and effect of the present invention clearer and clearer, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0026] The present invention provides a quantum dot light-emitting diode, which comprises from bottom to top: a substrate, an anode layer, a hole injection functional layer, a quantum dot light-emitting layer, an electron transport layer, and a cathode layer, wherein the hole injection function The layer is formed by introducing a perfluorinated ionomer into a hole injection layer or a hole transport layer.

[0027] The core improvement of the present invention lies in: introducing a perfluorinated ion polymer into the hole injection layer or the hole ...

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Abstract

The invention discloses a quantum dot light-emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprises a substrate, an anode layer, a hole injection functional layer, a quantum dot light-emitting layer, an electron transport layer and a cathode layer; a perfluorinated ion polymer is led into a hole injection layer or a hole transport layer, so that the hole injection functional layer can be formed. According to the quantum dot light-emitting diode and the preparation method thereof of the invention, the perfluorinated ion polymer is led into the hole injection layer or the hole transport layer, so that a work function gradually changed hole injection layer or hole transport layer can be formed, and therefore, a hole injection barrier at an interface can be reduced, and hole injection can be improved; and the structure of the device can be simplified, the use of a multilayer structure can be avoided, and therefore, hole injection can be improved, and preparation cost can be saved.

Description

technical field [0001] The invention relates to the technical field of light emitting diodes, in particular to a quantum dot light emitting diode and a preparation method thereof. Background technique [0002] Semiconductor quantum dots have good characteristics such as high light color purity, high luminous quantum efficiency, adjustable luminous color, and long service life. These characteristics make quantum dot light-emitting diodes (QLEDs) with quantum dot materials as the light-emitting layer have broad application prospects in solid-state lighting, flat panel display and other fields, and have attracted extensive attention from academia and industry. [0003] In recent years, through the improvement of quantum dot material synthesis process and the optimization of device structure, the performance of QLED has been greatly improved. However, due to the deep energy level and large ionization potential of quantum dot materials, the existing hole transport layer and Ther...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/10H10K50/155H10K50/17H10K71/00
Inventor 陈亚文谢相伟肖标
Owner TCL CORPORATION
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