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Quantum dot light-emitting diode and its preparation method

A quantum dot light-emitting and diode technology, which is used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as carrier injection imbalance, increase surface work function, injection balance, and improve hole injection. The effect of efficiency

Active Publication Date: 2021-11-19
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the above-mentioned shortcomings of the prior art, provide a quantum dot light-emitting diode and its preparation method, aiming at solving the technical problem of unbalanced carrier injection in the existing devices

Method used

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preparation example Construction

[0029] On the other hand, the embodiment of the present invention also provides a method for preparing a quantum dot light-emitting diode, such as figure 2 shown, including the following steps:

[0030] S01: Provide a base;

[0031] S02: Prepare a material layer composed of organic molecules on the substrate; wherein, the organic molecules contain electron withdrawing groups.

[0032]The preparation method of the quantum dot light-emitting diode provided by the embodiment of the present invention is simple in process and low in cost, and the device can be obtained by directly preparing a material layer composed of unique organic molecules on the substrate; the material in the device finally obtained by the preparation method The layer is between the anode and the quantum dot light-emitting layer, and is a material layer made of organic molecules containing electron withdrawing groups. Such organic molecules can increase the surface work function of the anode material and red...

Embodiment 1

[0044] A kind of QLED light-emitting device, its structure diagram is as follows figure 1 As shown, from bottom to top, it includes a substrate, an anode disposed on the substrate, a hole injection layer disposed on the anode, a hole transport layer disposed on the hole injection layer, and a hole transport layer disposed on the hole transport layer A material layer consisting of 4-nitrothiophenol, a quantum dot light-emitting layer arranged on the material layer, an electron transport layer arranged on the quantum dot light-emitting layer, a cathode arranged on the electron transport layer, arranged between the anode and the cathode the encapsulation layer.

[0045] in,

[0046] In this embodiment, the substrate adopts a glass substrate;

[0047] In this embodiment, the anode is ITO with a thickness of 150 nm. To take out ITO, first use a nitrogen gun to clear the large particles of dust on the surface, then use detergent, ultrapure water, and isopropyl alcohol to ultrason...

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Abstract

The invention belongs to the field of display technology, and in particular relates to a quantum dot light-emitting diode and a preparation method thereof. A quantum dot light-emitting diode, comprising an anode, a cathode, and a quantum dot light-emitting layer between the anode and the cathode, a material layer composed of organic molecules is arranged between the anode and the quantum dot light-emitting layer, the The above organic molecules contain electron-withdrawing groups. The material layer composed of organic molecules containing electron-withdrawing groups can reduce the hole injection barrier from the anode to the quantum dot material, thereby improving the hole injection efficiency of the device, making the injection of holes and electrons more balanced, and ultimately improving the performance of the device. performance.

Description

technical field [0001] The invention belongs to the technical field of display, and in particular relates to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Display technology from the early cathode ray tube (Cathode Ray Tube, CRT) to the mid-1980s liquid crystal display (Liquid Crystal Display, LCD), plasma flat panel display (plasma display panel, PDP), and then to the current mainstream organic Light-emitting diodes (Organic Light Emitting Diode, OLED) and quantum dot light-emitting diodes (Quantum Dot Light Emitting Diode, QLED), display technology has completed a qualitative leap again and again. [0003] Quantum dot light-emitting diodes (QDs) have great potential in display and lighting fields due to their narrow half-peak width, high brightness, continuously adjustable emission color with the size of quantum dots, and solution preparation. The display panel based on QLED covers a wide color gamut and has high color ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K50/17H10K71/00
Inventor 眭俊谢相伟黄航苏亮田亚蒙
Owner TCL CORPORATION
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