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Modification method of hole transport material, light-emitting device and preparation method of light-emitting device

A technology of hole transport material and modification method, which is applied in the field of display devices, can solve the problems of large energy gap between the hole transport layer and the quantum dot light-emitting layer, so as to improve luminous efficiency and stability, reduce energy level difference, and improve recombination efficiency effect

Pending Publication Date: 2022-01-25
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of this application is to provide a method for modifying hole transport materials, and a light-emitting device and its preparation method, aiming to solve the problem of large energy gap between the existing hole transport layer and the quantum dot light-emitting layer to a certain extent

Method used

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  • Modification method of hole transport material, light-emitting device and preparation method of light-emitting device
  • Modification method of hole transport material, light-emitting device and preparation method of light-emitting device
  • Modification method of hole transport material, light-emitting device and preparation method of light-emitting device

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preparation example Construction

[0041] The second aspect of the present application provides a method for preparing a light-emitting device, comprising the following steps:

[0042] S10. Providing a substrate comprising an anode,

[0043] S20. Depositing a hole transport material on the surface of the anode away from the substrate to obtain a hole transport layer;

[0044] S30. Depositing a quantum dot material on the surface of the hole transport layer away from the substrate to obtain a quantum dot light-emitting layer;

[0045] S40. Depositing a cathode material on the surface of the quantum dot luminescent layer away from the hole transport layer to obtain a cathode;

[0046] Wherein, the side of the hole transport layer close to the quantum dot light-emitting layer contains a polymer hole transport material modified with an acidic compound.

[0047] In the method for preparing a light-emitting device provided in the second aspect of the present application, a hole transport layer, a quantum dot light-...

Embodiment 1

[0082] A quantum dot light emitting diode, comprising the following steps:

[0083] 001 spin-coated PEDOT:PSS on a clean ITO substrate as a hole injection layer. And heated at 150°C for 30min.

[0084] 002 Continue to spin-coat 8 mg / mL TFB solution on the PEDOT:PSS film as a hole transport layer.

[0085] 003 Spin-coat hydrogen bromide ethanol solution on TFB film, its pH value is 5. Anneal at 150°C for 30min after spin coating. The solution used can also be an ethanol solution of organic acids such as phosphoric acid or acetic acid.

[0086] 004 Spin-coat green light quantum dots on the hole transport layer as the light-emitting layer.

[0087] 005 continued to spin-coat zinc oxide on the quantum dot film as an electron transport layer.

[0088] 006 Evaporate a metal Ag electrode on the electron transport layer.

[0089] 007 device packaging to obtain quantum dot light-emitting diodes.

Embodiment 2

[0091] A quantum dot light emitting diode, comprising the following steps:

[0092] 001 spin-coated PEDOT:PSS on a clean ITO substrate as a hole injection layer. And heated at 150°C for 30min.

[0093] 002 Spin-coat the TFB chlorobenzene solution with hydrogen bromide as an additive on the PEDOT:PSS film, and the addition ratio is 8*10 -5 mol HBr per ml TFB chlorobenzene solution. TFB solution is 8mg / mL. The acid used as an additive may also be an organic acid such as phosphoric acid or acetic acid.

[0094] 003 Spin-coat green light quantum dots on the above-mentioned hole transport layer as the light-emitting layer.

[0095] 004 continued to spin-coat zinc oxide on the quantum dot film as an electron transport layer.

[0096] 005 Evaporate a metal Ag electrode on the electron transport layer.

[0097] 006 device packaging to obtain quantum dot light-emitting diodes.

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Abstract

The invention belongs to the technical field of display devices, and particularly relates to a modification method of a hole transport material. The method comprises the following steps: obtaining a polymer hole transport material; and modifying the polymer hole transport material with an acidic compound to obtain the modified hole transport material. According to the modification method of the hole transport material, the polymer hole transport material is modified by adopting the acidic compound, so that the work function of the polymer hole transport material is improved, the hole injection barrier in the hole transport layer is reduced, and the energy level difference of a valence band between the hole transport layer and the quantum dot light-emitting layer is reduced; therefore, the injection efficiency of holes in the quantum dot light-emitting layer is improved, the recombination efficiency of electrons and holes in the quantum dot light-emitting layer is improved, the light-emitting efficiency and stability of the light-emitting device are improved, and the service life is prolonged.

Description

technical field [0001] The application belongs to the technical field of display devices, and in particular relates to a method for modifying a hole transport material, a light-emitting device and a preparation method thereof. Background technique [0002] Quantum dot materials are considered to be new optoelectronic materials with great potential due to their optical characteristics such as wide excitation spectrum, narrow emission spectrum, adjustable emission wavelength, and high luminous efficiency. In recent years, quantum dot (QD) luminescent materials have broad application prospects in new display and lighting, solar cells, biomarkers and other fields. Quantum dot display technology relies on the independent light emission of red, green and blue pixels. Quantum dots with different energy band widths can be obtained by adjusting the size of quantum dots. Quantum dots with different energy band widths will emit photons of different energies under excitation condition...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G61/12C08F8/00C08F126/12C08G79/04H01L51/56H01L51/50H01L51/54
CPCC08G61/124C08G61/12C08F8/00C08G79/04H10K85/111H10K85/146H10K85/151H10K50/115H10K50/15H10K71/00C08F126/12
Inventor 姚振垒
Owner TCL CORPORATION
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