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Low-roll-off quasi-two-dimensional perovskite light emitting diode and preparation method thereof

A technology of light-emitting diodes and perovskites, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, and electrical solid-state devices. It can solve the problems of device efficiency roll-off, many thin film grain boundaries, and poor film quality, etc., to achieve suppression efficiency Roll-off, suppression of non-radiative recombination, low-cost effects

Active Publication Date: 2020-05-22
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, compared with the traditional three-dimensional perovskite, quasi-two-dimensional perovskite has more grain boundaries in the film due to the reduced grain size, and the quality of the film is deteriorated, and the device efficiency rolls off seriously under high voltage, which is a common problem of perovskite LEDs. question

Method used

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  • Low-roll-off quasi-two-dimensional perovskite light emitting diode and preparation method thereof
  • Low-roll-off quasi-two-dimensional perovskite light emitting diode and preparation method thereof
  • Low-roll-off quasi-two-dimensional perovskite light emitting diode and preparation method thereof

Examples

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Embodiment 1

[0050] In this example, see figure 1, a low-roll-off quasi-two-dimensional perovskite light-emitting diode, in which a cathode (1), a hole transport layer (2), an interface modification layer (3) between the hole transport layer and the light-emitting layer, and a perovskite Mineral luminescent layer (4), luminescent layer and electron transport interface modification layer (5), electron transport layer (6), electron injection layer (7), anode (8);

[0051] The thickness of the negative electrode (1) is 150nm, and the grid (1) adopts ITO conductive glass film; the thickness of the hole transport layer (2) is 50nm, and the hole transport layer (2) adopts PEDOT: Made of PSS; the thickness of the interface modification layer (3) between the hole transport layer and the light-emitting layer is 10nm, and cesium carbonate (Cs 2 CO 3 ) is made; the thickness of the perovskite light-emitting layer (4) is 100nm; the thickness of the light-emitting layer and the electron transport int...

Embodiment 2

[0075] This embodiment is basically the same as Embodiment 1, especially in that:

[0076] In this example, see figure 1 , a low-roll-off quasi-two-dimensional perovskite light-emitting diode, in which a cathode (1), a hole transport layer (2), an interface modification layer (3) between the hole transport layer and the light-emitting layer, and a perovskite Mineral luminescent layer (4), luminescent layer and electron transport interface modification layer (5), electron transport layer (6), electron injection layer (7), anode (8);

[0077] The thickness of the negative electrode (1) is 100nm, and the grid (1) adopts ITO conductive glass film; the thickness of the hole transport layer (2) is 40nm, and the hole transport layer (2) adopts PEDOT: Made of PSS; the thickness of the interface modification layer (3) between the hole transport layer and the light-emitting layer is 1nm, and cesium carbonate (Cs 2 CO 3 ) is made; the thickness of the perovskite light-emitting layer (...

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Abstract

The invention discloses a low-roll-off quasi-two-dimensional perovskite light-emitting diode and a preparation method thereof. The low-roll-off quasi-two-dimensional perovskite light-emitting diode issequentially provided with a cathode, a hole transport layer, a hole transport layer and light-emitting layer interface modification layer, a perovskite light-emitting layer, a light-emitting layer and electron transport interface modification layer, an electron transport layer, an electron injection layer and an anode from bottom to top. By modifying the interface of the hole transport layer andthe perovskite light-emitting layer, the hole injection barrier between the hole layer and the light-emitting layer is reduced, the hole injection efficiency is improved, the hole layer can be prevented from quenching the perovskite layer, and the light-emitting efficiency of the perovskite layer is improved. The interface of the perovskite light-emitting layer and the electron transport layer isalso modified, so that the defect state of the perovskite surface can be passivated, the film quality of the light-emitting layer is improved, non-radiative recombination is inhibited, and the light-emitting efficiency of the device is further improved.

Description

technical field [0001] The invention relates to a perovskite light-emitting diode and a preparation method thereof, in particular to a quasi-two-dimensional perovskite light-emitting diode and a preparation method thereof, which are applied in the technical field of semiconductor material preparation technology. Background technique [0002] As a new and efficient semiconductor material, perovskite has many superior optical properties. Compared with the commercialized organic light-emitting diode (OLED), it has a narrow half-width, a spectrum that can cover the full wavelength range, and is soluble Therefore, it has become a current research hotspot. In recent years, perovskites have shown considerable application value in solar cells, LED lighting, photodetectors, lasers, and flat panel displays. However, most current LEDs face efficiency roll-off at high voltages, which limits the commercialization of perovskites to a certain extent. Therefore, the high-voltage stability...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K71/15H10K71/12H10K50/16H10K50/15
Inventor 杨绪勇张婷
Owner SHANGHAI UNIV
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