Preparation method of In-doped MoO3 thin film and application of thin film in QLED

A technology of thin film and indium salt, which is applied in the field of flat panel display, can solve the problems of affecting charge transport and injection, inapplicability, etc., and achieve the effects of reducing injection barrier, improving efficiency, good energy level matching and applicability

Active Publication Date: 2016-07-20
TCL CORPORATION
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Problems solved by technology

[0004] The object of the present invention is to provide a kind of In-doped MoO 3 The preparation method of the film aims to solve the problem that molybdenum oxide affects the transport and injection of charges due to its high resistance value, while the existing In-doped MoO 3 The preparation method needs to be calcined at high temperature and is not suitable for the preparation of QLED hole injection layer

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  • Preparation method of In-doped MoO3 thin film and application of thin film in QLED
  • Preparation method of In-doped MoO3 thin film and application of thin film in QLED

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[0020] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0021] combine figure 1 , the embodiment of the present invention provides an In-doped MoO 3 The preparation method of thin film, comprises the following steps:

[0022] S01. Provide indium salt and MoO 3 , the indium salt and MoO 3 Dissolving in an organic solvent to form a mixed solution, adding an inorganic acid to the mixed solution and then performing heat treatment to obtain a precursor solution, wherein the temperature of the heat treatment is 50-80°C;

[0023] S02. Provide a substrate, deposit the precursor solution on the substrate by a solution processing method, and then perf...

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Abstract

The invention provides a preparation method of an In-doped MoO3 thin film and application of the In-doped MoO3 thin film in a QLED. The preparation method of the In-doped MoO3 thin film comprises the steps of: providing indium salts and MoO3, dissolving the indium salts and the MoO3 in an organic solvent to form a mixed solution, adding inorganic acid into the mixed solution, then carrying out heat treatment on the solution to obtain a precursor solution, wherein the temperature of heat treatment ranges from 50 to 80 DEG C; and providing a substrate, depositing the precursor solution on the substrate by adopting a solution processing method, and then carrying out annealing treatment to obtain the In-doped MoO3 thin film, wherein the annealing temperature ranges from 150 to 350 DEG C, and the time ranges from 15 to 30 min.

Description

technical field [0001] The invention belongs to the field of flat panel display technology, in particular to an In-doped MoO 3 Preparation method of thin film and its application in QLED. Background technique [0002] In recent years, due to the advantages of high light color purity, high luminous quantum efficiency, adjustable luminous color, and long service life, quantum dot light-emitting diodes (QLEDs) using quantum dot materials as the light-emitting layer have received extensive attention and become a new type of light-emitting diode. The main direction of LED research. Existing QLEDs generally include an anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and a cathode. Wherein, the hole injection layer is used as a functional layer, which can reduce the injection barrier of holes, thereby improving the carrier transfer efficiency. [0003] PEDOT:PSS (poly(3,4-ethylenedioxythiophene)-polystyrene s...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56H01L51/52
CPCH10K50/155H10K50/17H10K50/80H10K2102/00H10K71/00
Inventor 王宇曹蔚然杨一行钱磊
Owner TCL CORPORATION
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