45results about How to "Enhanced photoluminescence intensity" patented technology

To provide a Sialon-based phosphor having a high photoluminescent intensity, which can realize a high brightness LED, particularly a white LED using a blue LED as the light source, and a production method of the Sialon-based phosphor. The α-Sialon based phosphor of the present invention is represented by the formula:

Li_xM_yLn_zSi_12−(m+n)Al_(m+n)O_nN_16−n   (I)

wherein M is at least one metal selected from Ca, Mg and Y, Ln is at least one lanthanide metal selected from Eu, Dy, Er, Tb, Yb and Ce, x+ay+bz=m (assuming that the valence of metal M is a and the valence of lanthanide metal Ln is b), 0<x≦0.8, 0<y, 0<z, 0.3≦m<4.5, and 0<n<2.25.

The invention discloses a method for preparing a TiO2 (titanium dioxide) nano-pillar array on a surface of an LED (light-emitting diode) epitaxial wafer. The method comprises the following steps: (1) preparing a GaN (gallium nitride) epitaxial wafer on a sapphire substrate; (2) evaporating a titanium layer on a surface of a P-type GaN layer of the epitaxial wafer, and carrying out calcination to transform titanium into TiO2 which is taken as a seeding layer; (3) adopting a hydrothermal method to prepare the TiO2 nano-pillar array, placing an HCl (hydrogen chloride) solution into an autoclave, stirring at a room temperature and adding tetrabutyl titanate to prepare a mixture solution; placing an epitaxial wafer with the TiO2 seedling layer into the mixture solution, leaning against a lining wall of the autoclave in a heeling condition, reacting for 1-24 hours at 120 DEG C-180 DEG C and cooling to the room temperature. The method is simple and practicable and has the advantages of low cost, high controllability, good homogenization and a periodical array is easy to form; in addition, the method can be utilized to improve the light-emitting efficiency of an LED, and the photoluminescence intensity of the LED can be improved by 7-8 times.

The invention relates to a method for coating surface of black phosphor nano particles with mesoporous silica, which belongs to the fields of biomedicine and a nano material. preparing the black phosphor nano particles; placing the prepared black phosphor nano particles in a shaking table, oscillating the shaking table while adding a proper amount of TEOS (ethyl orthosilicate), repeating the above step after half hour; after a reaction is completed, performing centrifugation cleaning, discharging a supernatant, and re-dispersing the black phosphor nano particles coated with silica in ultra pure water, the black phosphor nano particles coated with silica can effectively alleviate the easy agglomeration characteristic of black phosphor, and the silica for coating the black phosphor nano particles is used for acoustic imaging, drug loading, and biological imaging.

The invention discloses a method for using lithium erbium codoping to prepare for near-infrared luminous ZnO thin film, which comprises the following steps: 1) ball abrading mixing the ZnO, Er2O3 and Li2CO3 powder with the mole rate 95-98:1-2.5:1-2.5, pre-firing them on the silicon carbide rod oven at the temperature of 700-900 deg., adding adhesive to do milling extrusion molding and firing to obtain the ceramic material; 2) arranging the ceramic material in the generating room of the pulsed laser deposit appliance to generate the ZnO thin film with erbium; 3) annealing the ZnO thin film with erbium in the oxygen atmosphere at the temperature of 700-1500 deg.

The present invention relates to a phosphor having excellent emission brightness by inclusion of Si or Fe in the phosphor having a TbAG:Ce composition, and a white LED. The white photoluminescent device in accordance with the present invention comprises at least one light-emitting diode emitting light with a wavelength of 430 to 470 nm and a phosphor having a composition of TbAG:Ce, wherein the phosphor having a composition of TbAG:Ce is composed of a compositional formula of (Tb_1-xCe_x)₃ (Al_1-yM_y)₅O₁₂, wherein x is between 0.01 and 0.4, y is between 0.0 and 0.1, and M is selected from the group consisting of Si and Fe.

Provided is a method for preparing an OLED light-emitting device with a metal-enhanced fluorescence outer conversion layer. The invention provides a preparing method for a metal-enhanced fluorescence layer and an OLED device based on the method. The preparing method for the metal-enhanced fluorescence light-emitting layer includes the following steps of firstly, preparing a nanometer metal particle layer, wherein the nanometer metal particle layer is obtained by forming a metal film through vacuum evaporation and then conducting thermal treatment; secondly, preparing an organic fluorescence material solution, and evenly mixing the fluorescence material in high-molecular polymers; thirdly, preparing the metal-enhanced fluorescence outer conversion layer. The structure is prepared on the outer side of glass of an OLED, surface plasmas are formed on light waves emitted by the OLED device and metal nanometer particles on the outer side of the glass through the structure, and therefore the luminous intensity of fluorescent molecules is enhanced through the strong partial enhancing characteristic of the surface plasmas, the photoluminescence of the metal-enhanced fluorescence outer conversion layer of the OLED device is greatly enhanced. The OLED device with the metal-enhanced fluorescence outer conversion layer is simple in preparation process, low in device requirement and short in preparation cycle.

The invention disclose a method for improving photoluminescence of nano anatase TiO#-[2] by employing an electron beam co-radiation method in the environment of atmospheric temperature and normal atmosphere, wherein methyl methacrylate is grafted on the nanocrystalline surface of the anatase titanium dioxide (Anatase. A-TiO2). The processed anatase TiO2 nano powder can be combined firmly with methyl methacrylate (MMA) through chemical bonds.

The present invention provides a ZnO nanorod array detection kit which is used for early diagnosis of the liver cancer. The kit adopts anti-AFP protein, anti-AFP (alpha-fetoprotein) protein, anti-sugar protein 19-9 and anti-sugar protein 125; the kit consists of an improved ZnO nanorod array film which is coated by the four kinds of protein, a bottom plate, a micro field device (with an electrophoresis tank and a pair of electrodes) and buffer solution; the invention also relates to the utilizing and detecting method of the kit. The kit can be used for the diagnosis of benign and malignant primary liver cancer tumors, in particular for the detection of the early clinical primary liver cancer, and can be used for the chemotherapeutic monitoring and the prognostic evaluation after the operation on the liver cancer. The invention has the characteristics of high speed, sensitivity, accuracy, reliability, simple operation, and suitability for the primary health care units and the hospitals of various levels.

The invention discloses a preparation method of a quasi-two dimensional perovskite precursor solution. The preparation method comprises the following steps: step one, dissolving lead bromide (PbBr2) and methylammonium bromide (NABr) or formamidine ammonium bromide (FABr) according to the molar ratio of 1:(0.5-1) into a polar solvent to prepare and obtain a three-dimensional perovskite precursor solution; step three, dissolving phenethyl ammonium bromide (PEABr) into the polar solvent to prepare and obtain a ligand precursor solution; and step three, mixing the three-dimensional perovskite precursor solution with the ligand precursor solution to prepare and obtain the quasi-two dimensional perovskite precursor solution. The preparation method has the advantages that the preparation method is simple and easy to operate, the preparation time is short, the using amount of precursor materials is small, other materials do not need to be introduced and the preparation cost is low; the quantity of single-layer and double-layer perovskite is obviously reduced in a perovskite film prepared based on the precursor solution provided by the invention, and the photoluminescence intensity is obviously promoted; and the performance of a perovskite light-emitting diode prepared based on the precursor solution provided by the invention is obviously promoted.

The invention discloses an InGaAs/AlGaAs single quantum well and multiple quantum well semiconductor laser active region epitaxial structure. The structure sequentially comprises a GaAs cover layer, an AlGaAs upper barrier layer, a GaAs upper insertion layer, an InGaAs potential well layer, a GaAs lower insertion layer, an AlGaAs lower barrier layer, a GaAs buffer layer and an N-type substrate from top to bottom. The GaAs (100) crystal orientation deviates to (110) for 2 degrees in the N-type substrate. According to the invention, the problem of narrow GaAs band gap in InGaAs/GaAs in a semiconductor laser active region material system with the wavelength of 900-950nm is solved.

The invention is a method for using erbium ion injected with boehmite to produce erbium-doped aluminum oxide optic wave-guide film in photoelectron material and device field. It synthesizes in situ the erbium doped Al2O3 optic wave-guide film with gel-sol and ion injecting processes, coats gamma-ALOOH dried gel film on the SiO2/Si base plate with dipping and sash method or rotation painting method, then injects erbium ion into gamma-ALOOH dried gel film, synthesizes the erbium doped Al2O3 optic wave-guide film in situ through high temperature baking, the process is: coats gamma-ALOOH dried gel film on the SiO2/Si base plate; injects the erbium ion into gamma-ALOOH dried gel film; repeats the first and the second steps, acquires the total thickness and dose of the erbium-doped ion gamma-ALOOH dried gel film; bakes the erbium-doped ion gamma-ALOOH dried gel film in 600-1000deg.C, produces the erbium doped Al2O3 optic wave-guide film through the chemical and physical compound process of 2Er+2gamma-ALOOH->(Al, Er)2O3+H2O. The erbium ion distribution is more even and the dispersant is higher, the photoluminescence intensity can be increased for 3 to 6 times.

The invention relates to a test system for improving photoluminescence test effect of semiconductor material, which comprises a laser device, a spectral measurement system and light path components, wherein the light path components comprise a reflecting mirror, a lens and a paraboloidal mirror and constitute a test light path. A laser excited from the laser device turns a direction by the reflecting mirror and then directly irradiates the tested sample after being focused by the lens; and the laser reflected by the tested sample is collected by the paraboloidal mirror to turn the direction and be collimated, and then sent to the spectral measurement system in the form of broad beam. The laser device in the invention selects appropriate emission wavelength according to the characteristics of the semiconductor material, thereby obtaining high photoluminescence strength, enhancing the photoluminescence test capacity and improving the test sensitivity. In addition, the invention does not have limits and special requirements for the spectral measurement system, and thus, the realization mode is very flexible.

Specially, the invention is related to method for raising luminescence of silicon based crystal thin film by using process of plasma. The method includes steps: (1) preparing Er-Si-O sol according to certain ratio of chemical dose; (2) spin coating a layer of thin film of Er-Si-O dried gel xerogel on conventional processed silicon substrate; (3) high sintering to reach total thickness of thin film of Er-Si-O dried gel xerogel, and generating thin film of Er-Si-O crystal in situ; (4) processing thin film of silicon based Er-Si-O crystal by using N plasma produced by equipment of plasma enhanced chemical vapor deposition (PECVD); (5) two times of annealing thin film of Er-Si-O crystal processed by plasma in order to diffuse N element in thin film well, lower symmetry of crystal field around Er3+ ions, and raise intensity of photoluminescence.

The invention discloses a method for high-pressure solid-phase synthesis of an iodine-copper-cesium lead-free quantum dot. The method comprises the following steps: uniformly mixing CsI and CuI according to a molar ratio of 3: 2, conducting tabletting, and carrying out treating at a high pressure not lower than 1 GPa to obtain an iodine-copper-cesium quantum dot nanomaterial. According to the invention, copper iodide and cesium iodide are used as precursors, high-pressure solid-phase synthesis is adopted, process is simple and controllable, inert atmosphere protection is not needed in the preparation process, and the obtained copper-cesium iodide quantum dot has high photoluminescence intensity.

The invention discloses a method for constructing a high-stability perovskite quantum dot illuminant through in-situ polymerization, which comprises the steps of preparing a perovskite quantum dot stock solution by using a thermal injection method, and polymerizing quantum dots to prepare a photoluminescence block by using a high-molecular polymerization method, so that the stability of the quantum dots in air and water can be effectively improved, and the photoluminescence property of the prepared luminescent block is almost not reduced after the prepared luminescent block is stored in air for several months. Meanwhile, the perovskite quantum dots with different colors prepared from different raw materials can be effectively polymerized with polymer monomers in situ, so that the photoluminescence block with almost the whole visible light range from purple to near infrared is obtained.

The invention relates to a preparation method of a surface-modified colloidal state silicon nanocrystal. The preparation method comprises the following steps that (1) a mixed liquid of nanometer silicon powder and an organic solvent is subjected to laser cauterization treatment under the stirring state; (2) the mixed liquid after laser cauterization treatment is subjected to separation treatment, and the colloidal state silicon nanocrystal is obtained. The particle size distribution range of the colloidal state silicon nanocrystal prepared with the preparation method is controllable, the dispersity is good, no agglomeration occurs, and oxidation can be avoided.

The invention discloses a CuO-based composite material with high photoelectric property, which is obtained by fully mixing CuO powder and MoS2 powder according to a molar ratio of (4: 1)-(20: 1), tabletting and then annealing at 700-850 DEG C for 5-10 minutes. CuO is subjected to MoS2 doping modification, so that the photoluminescence intensity of the obtained composite material can reach about 108 times of the photoelectric property of a pure CuO material at most. The composite material is expected to become a novel material in the field of photoelectric property materials.