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45results about How to "Enhanced photoluminescence intensity" patented technology
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Sialon-based phosphor and its production method
ActiveUS20050012075A1Efficiently obtainedEnhanced photoluminescence intensityDischarge tube luminescnet screensLamp detailsPhosphorLanthanide
To provide a Sialon-based phosphor having a high photoluminescent intensity, which can realize a high brightness LED, particularly a white LED using a blue LED as the light source, and a production method of the Sialon-based phosphor. The α-Sialon based phosphor of the present invention is represented by the formula: LixMyLnzSi12−(m+n)Al(m+n)OnN16−n (I) wherein M is at least one metal selected from Ca, Mg and Y, Ln is at least one lanthanide metal selected from Eu, Dy, Er, Tb, Yb and Ce, x+ay+bz=m (assuming that the valence of metal M is a and the valence of lanthanide metal Ln is b), 0<x≦0.8, 0<y, 0<z, 0.3≦m<4.5, and 0<n<2.25.
Owner:DENKA CO LTD
Sialon-based phosphor and its production method
ActiveUS7144524B2Efficiently obtainedEnhanced photoluminescence intensityDischarge tube luminescnet screensLamp detailsPhosphorLanthanide
To provide a Sialon-based phosphor having a high photoluminescent intensity, which can realize a high brightness LED, particularly a white LED using a blue LED as the light source, and a production method of the Sialon-based phosphor. The α-Sialon based phosphor of the present invention is represented by the formula:LixMyLnzSi12−(m+n)Al(m+n)OnN16−n (I)wherein M is at least one metal selected from Ca, Mg and Y, Ln is at least one lanthanide metal selected from Eu, Dy, Er, Tb, Yb and Ce, x+ay+bz=m (assuming that the valence of metal M is a and the valence of lanthanide metal Ln is b), 0<x≦0.8, 0<y, 0<z, 0.3≦m<4.5, and 0<n<2.25.
Owner:DENKA CO LTD
Method for preparing TiO2 (titanium dioxide) nano-pillar array on surface of LED (light-emitting diode) epitaxial wafer
InactiveCN102214738AImprove luminous efficiencyEnhanced photoluminescence intensityNanotechnologySemiconductor devicesControllabilityPhotoluminescence
The invention discloses a method for preparing a TiO2 (titanium dioxide) nano-pillar array on a surface of an LED (light-emitting diode) epitaxial wafer. The method comprises the following steps: (1) preparing a GaN (gallium nitride) epitaxial wafer on a sapphire substrate; (2) evaporating a titanium layer on a surface of a P-type GaN layer of the epitaxial wafer, and carrying out calcination to transform titanium into TiO2 which is taken as a seeding layer; (3) adopting a hydrothermal method to prepare the TiO2 nano-pillar array, placing an HCl (hydrogen chloride) solution into an autoclave, stirring at a room temperature and adding tetrabutyl titanate to prepare a mixture solution; placing an epitaxial wafer with the TiO2 seedling layer into the mixture solution, leaning against a lining wall of the autoclave in a heeling condition, reacting for 1-24 hours at 120 DEG C-180 DEG C and cooling to the room temperature. The method is simple and practicable and has the advantages of low cost, high controllability, good homogenization and a periodical array is easy to form; in addition, the method can be utilized to improve the light-emitting efficiency of an LED, and the photoluminescence intensity of the LED can be improved by 7-8 times.
Owner:SHANDONG UNIV
Method for coating surface of black phosphor nano particles with mesoporous silica
InactiveCN107043093AAlleviate easy agglomeration propertiesPerformance impactMaterial nanotechnologyEnergy modified materialsCentrifugationPhosphor
The invention relates to a method for coating surface of black phosphor nano particles with mesoporous silica, which belongs to the fields of biomedicine and a nano material. preparing the black phosphor nano particles; placing the prepared black phosphor nano particles in a shaking table, oscillating the shaking table while adding a proper amount of TEOS (ethyl orthosilicate), repeating the above step after half hour; after a reaction is completed, performing centrifugation cleaning, discharging a supernatant, and re-dispersing the black phosphor nano particles coated with silica in ultra pure water, the black phosphor nano particles coated with silica can effectively alleviate the easy agglomeration characteristic of black phosphor, and the silica for coating the black phosphor nano particles is used for acoustic imaging, drug loading, and biological imaging.
Owner:BEIJING UNIV OF TECH
Method for preparing near-infrared light-emitting ZnO film doped with lithium and erbium
The invention discloses a method for using lithium erbium codoping to prepare for near-infrared luminous ZnO thin film, which comprises the following steps: 1) ball abrading mixing the ZnO, Er2O3 and Li2CO3 powder with the mole rate 95-98:1-2.5:1-2.5, pre-firing them on the silicon carbide rod oven at the temperature of 700-900 deg., adding adhesive to do milling extrusion molding and firing to obtain the ceramic material; 2) arranging the ceramic material in the generating room of the pulsed laser deposit appliance to generate the ZnO thin film with erbium; 3) annealing the ZnO thin film with erbium in the oxygen atmosphere at the temperature of 700-1500 deg.
Owner:ZHEJIANG UNIV
White Light Emitting Device
ActiveUS20080197320A1Improve quantum efficiencyGood colorDischarge tube luminescnet screensLamp detailsLength waveLight-emitting diode
The present invention relates to a phosphor having excellent emission brightness by inclusion of Si or Fe in the phosphor having a TbAG:Ce composition, and a white LED. The white photoluminescent device in accordance with the present invention comprises at least one light-emitting diode emitting light with a wavelength of 430 to 470 nm and a phosphor having a composition of TbAG:Ce, wherein the phosphor having a composition of TbAG:Ce is composed of a compositional formula of (Tb1-xCex)3 (Al1-yMy)5O12, wherein x is between 0.01 and 0.4, y is between 0.0 and 0.1, and M is selected from the group consisting of Si and Fe.
Owner:NANOCMS
Method for preparing OLED light-emitting device with metal-enhanced fluorescence outer conversion layer
InactiveCN104241552AHighlight substantiveEnhanced photoluminescence intensitySolid-state devicesSemiconductor/solid-state device manufacturingLuminous intensityPhotoluminescence
Provided is a method for preparing an OLED light-emitting device with a metal-enhanced fluorescence outer conversion layer. The invention provides a preparing method for a metal-enhanced fluorescence layer and an OLED device based on the method. The preparing method for the metal-enhanced fluorescence light-emitting layer includes the following steps of firstly, preparing a nanometer metal particle layer, wherein the nanometer metal particle layer is obtained by forming a metal film through vacuum evaporation and then conducting thermal treatment; secondly, preparing an organic fluorescence material solution, and evenly mixing the fluorescence material in high-molecular polymers; thirdly, preparing the metal-enhanced fluorescence outer conversion layer. The structure is prepared on the outer side of glass of an OLED, surface plasmas are formed on light waves emitted by the OLED device and metal nanometer particles on the outer side of the glass through the structure, and therefore the luminous intensity of fluorescent molecules is enhanced through the strong partial enhancing characteristic of the surface plasmas, the photoluminescence of the metal-enhanced fluorescence outer conversion layer of the OLED device is greatly enhanced. The OLED device with the metal-enhanced fluorescence outer conversion layer is simple in preparation process, low in device requirement and short in preparation cycle.
Owner:SHANGHAI UNIV
Method for identifying blood albumen by chemically modified zinc oxide nanometer rod array film
InactiveCN101236208AEnhanced photoluminescence intensityBiological testingFluorescence/phosphorescenceLuminous intensityFluorescence spectrometer
The invention discloses a serum protein identification method through chemical modified ZnO nanometer rod array thin film. The invention adopts a fluorescence spectrometer to detect the array thin film and determines the serum protein through luminous intensity of the biologically connected nanometer rod array. The invention has the following steps in order: firstly connecting a polypeptide condensing agent to the surface of chemically modified ZnO nanometer rod array thin film; then connecting the serum protein to the ZnO nanometer rod array thin film; finally analyzing the biological array thin film with the fluorescence spectrometer, and identifying the serum protein through the detected luminous intensity. The invention adopts the chemical modification method to graft the serum protein onto the surface of the ZnO nanometer rod array to form the biological array thin film, and adopts the fluorescence spectrometer to carryout biological signal detection to identify the serum protein, thereby enabling the ZnO nanometer rod to have biological detection practical significance. The invention has wide application value in the biological detection and the disease diagnosis fields, etc.
Owner:SICHUAN UNIV
Method for improving photoluminescence of nano anatase TiO#-[2]
InactiveCN1594495AEnhanced photoluminescence intensityLuminescent compositionsPhotoluminescenceFluorescence
The invention disclose a method for improving photoluminescence of nano anatase TiO#-[2] by employing an electron beam co-radiation method in the environment of atmospheric temperature and normal atmosphere, wherein methyl methacrylate is grafted on the nanocrystalline surface of the anatase titanium dioxide (Anatase. A-TiO2). The processed anatase TiO2 nano powder can be combined firmly with methyl methacrylate (MMA) through chemical bonds.
![Method for improving photoluminescence of nano anatase TiO#-[2]](https://images-eureka.patsnap.com/patent_img/4bd70a9b-15a9-46e9-b19e-e66892f2584d/A0313579200071.PNG "Method for improving photoluminescence of nano anatase TiO#-[2]")
![Method for improving photoluminescence of nano anatase TiO#-[2]](https://images-eureka.patsnap.com/patent_img/4bd70a9b-15a9-46e9-b19e-e66892f2584d/A0313579200072.PNG "Method for improving photoluminescence of nano anatase TiO#-[2]")
![Method for improving photoluminescence of nano anatase TiO#-[2]](https://images-eureka.patsnap.com/patent_img/4bd70a9b-15a9-46e9-b19e-e66892f2584d/A0313579200073.PNG "Method for improving photoluminescence of nano anatase TiO#-[2]")
Owner:UNIV OF ELECTRONIC SCI & TECH OF CHINA
Hepatocarcinoma early diagnosis kit based on ZnO nano-bar array
InactiveCN101358973AEnhanced photoluminescence intensityAnalysis by material excitationAlpha-fetoproteinBiology
The present invention provides a ZnO nanorod array detection kit which is used for early diagnosis of the liver cancer. The kit adopts anti-AFP protein, anti-AFP (alpha-fetoprotein) protein, anti-sugar protein 19-9 and anti-sugar protein 125; the kit consists of an improved ZnO nanorod array film which is coated by the four kinds of protein, a bottom plate, a micro field device (with an electrophoresis tank and a pair of electrodes) and buffer solution; the invention also relates to the utilizing and detecting method of the kit. The kit can be used for the diagnosis of benign and malignant primary liver cancer tumors, in particular for the detection of the early clinical primary liver cancer, and can be used for the chemotherapeutic monitoring and the prognostic evaluation after the operation on the liver cancer. The invention has the characteristics of high speed, sensitivity, accuracy, reliability, simple operation, and suitability for the primary health care units and the hospitals of various levels.
Owner:SICHUAN UNIV
Preparation method of quasi-two dimensional perovskite precursor solution
InactiveCN110028954ASimple manufacturing methodShort preparation cycleLuminescent compositionsPhotoluminescenceAmmonium bromide
The invention discloses a preparation method of a quasi-two dimensional perovskite precursor solution. The preparation method comprises the following steps: step one, dissolving lead bromide (PbBr2) and methylammonium bromide (NABr) or formamidine ammonium bromide (FABr) according to the molar ratio of 1:(0.5-1) into a polar solvent to prepare and obtain a three-dimensional perovskite precursor solution; step three, dissolving phenethyl ammonium bromide (PEABr) into the polar solvent to prepare and obtain a ligand precursor solution; and step three, mixing the three-dimensional perovskite precursor solution with the ligand precursor solution to prepare and obtain the quasi-two dimensional perovskite precursor solution. The preparation method has the advantages that the preparation method is simple and easy to operate, the preparation time is short, the using amount of precursor materials is small, other materials do not need to be introduced and the preparation cost is low; the quantity of single-layer and double-layer perovskite is obviously reduced in a perovskite film prepared based on the precursor solution provided by the invention, and the photoluminescence intensity is obviously promoted; and the performance of a perovskite light-emitting diode prepared based on the precursor solution provided by the invention is obviously promoted.
Owner:NANJING UNIV OF POSTS & TELECOMM
InGaAs/AlGaAs single quantum well and multi-quantum well semiconductor laser active region epitaxial structure
InactiveCN111490456APerformance enhancements and improvementsEnhanced photoluminescence intensityLaser detailsSemiconductor lasersChemistryMultiple quantum
Owner:CHANGCHUN UNIV OF SCI & TECH
Preparing Er-doped alumina optical waveguide film by Er ion injected boehmite method
The invention is a method for using erbium ion injected with boehmite to produce erbium-doped aluminum oxide optic wave-guide film in photoelectron material and device field. It synthesizes in situ the erbium doped Al2O3 optic wave-guide film with gel-sol and ion injecting processes, coats gamma-ALOOH dried gel film on the SiO2 / Si base plate with dipping and sash method or rotation painting method, then injects erbium ion into gamma-ALOOH dried gel film, synthesizes the erbium doped Al2O3 optic wave-guide film in situ through high temperature baking, the process is: coats gamma-ALOOH dried gel film on the SiO2 / Si base plate; injects the erbium ion into gamma-ALOOH dried gel film; repeats the first and the second steps, acquires the total thickness and dose of the erbium-doped ion gamma-ALOOH dried gel film; bakes the erbium-doped ion gamma-ALOOH dried gel film in 600-1000deg.C, produces the erbium doped Al2O3 optic wave-guide film through the chemical and physical compound process of 2Er+2gamma-ALOOH->(Al, Er)2O3+H2O. The erbium ion distribution is more even and the dispersant is higher, the photoluminescence intensity can be increased for 3 to 6 times.
Owner:DALIAN UNIV OF TECH
Test system for improving photoluminescence test effect of semiconductor material
ActiveCN101949844AImplementation is flexibleEnhanced photoluminescence intensityAnalysis by material excitationOptical pathLight Testing
The invention relates to a test system for improving photoluminescence test effect of semiconductor material, which comprises a laser device, a spectral measurement system and light path components, wherein the light path components comprise a reflecting mirror, a lens and a paraboloidal mirror and constitute a test light path. A laser excited from the laser device turns a direction by the reflecting mirror and then directly irradiates the tested sample after being focused by the lens; and the laser reflected by the tested sample is collected by the paraboloidal mirror to turn the direction and be collimated, and then sent to the spectral measurement system in the form of broad beam. The laser device in the invention selects appropriate emission wavelength according to the characteristics of the semiconductor material, thereby obtaining high photoluminescence strength, enhancing the photoluminescence test capacity and improving the test sensitivity. In addition, the invention does not have limits and special requirements for the spectral measurement system, and thus, the realization mode is very flexible.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Test system for improving photoluminescence test effect of semiconductor material
ActiveCN101949844BEnhanced photoluminescence intensityEnhanced Photoluminescence Testing CapabilitiesAnalysis by material excitationSemiconductor materialsPhotoluminescence
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Method for raising radiation of silicone based crystal thin film by use of process of plasma
Specially, the invention is related to method for raising luminescence of silicon based crystal thin film by using process of plasma. The method includes steps: (1) preparing Er-Si-O sol according to certain ratio of chemical dose; (2) spin coating a layer of thin film of Er-Si-O dried gel xerogel on conventional processed silicon substrate; (3) high sintering to reach total thickness of thin film of Er-Si-O dried gel xerogel, and generating thin film of Er-Si-O crystal in situ; (4) processing thin film of silicon based Er-Si-O crystal by using N plasma produced by equipment of plasma enhanced chemical vapor deposition (PECVD); (5) two times of annealing thin film of Er-Si-O crystal processed by plasma in order to diffuse N element in thin film well, lower symmetry of crystal field around Er3+ ions, and raise intensity of photoluminescence.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Method for high-pressure solid-phase synthesis of iodine-copper-cesium lead-free quantum dot
ActiveCN111792665AThe preparation process is simple and controllableSmall grain sizeNanoopticsCopper compoundsPhotoluminescencePhysical chemistry
The invention discloses a method for high-pressure solid-phase synthesis of an iodine-copper-cesium lead-free quantum dot. The method comprises the following steps: uniformly mixing CsI and CuI according to a molar ratio of 3: 2, conducting tabletting, and carrying out treating at a high pressure not lower than 1 GPa to obtain an iodine-copper-cesium quantum dot nanomaterial. According to the invention, copper iodide and cesium iodide are used as precursors, high-pressure solid-phase synthesis is adopted, process is simple and controllable, inert atmosphere protection is not needed in the preparation process, and the obtained copper-cesium iodide quantum dot has high photoluminescence intensity.
Owner:XIANGTAN UNIV
Bio-based luminescent nano material and preparation method and application thereof
ActiveCN111139065AEnhanced photoluminescence intensityEnhanced photoluminescenceLuminescent compositionsLuminous intensityNanoparticle
The invention relates to a bio-based luminescent nano material and a preparation method and application thereof, and belongs to the technical field of materials. According to the material, cellulose nanocrystals serve as a core, MOFs serve as a shell, and the cellulose nanocrystals are directionally arranged in a MOFs cavity. By introducing nano-particles of which the maximum emission wavelength and the maximum excitation wavelength are matched with the maximum emission wavelength and the maximum excitation wavelength of the cellulose nanocrystalline into pores of the MOFs in the material, a derivative of the material is formed. Because the bio-based luminescent nano material and the derivative thereof have higher luminous intensity, the two materials can be well applied to the fields of information counterfeiting prevention, active substance tracing, biomarkers, catalysis or sensing, and the preparation processes of the two materials are simple, easy to operate, low in raw material cost, environment-friendly and suitable for expanded production.
Owner:重庆纳研新材料科技有限公司
Method for constructing high-stability perovskite quantum dot illuminant through in-situ polymerization
PendingCN113388387AEnhanced photoluminescence intensityImprove stabilityMaterial nanotechnologyNanoopticsLuminophoreIn situ polymerization
The invention discloses a method for constructing a high-stability perovskite quantum dot illuminant through in-situ polymerization, which comprises the steps of preparing a perovskite quantum dot stock solution by using a thermal injection method, and polymerizing quantum dots to prepare a photoluminescence block by using a high-molecular polymerization method, so that the stability of the quantum dots in air and water can be effectively improved, and the photoluminescence property of the prepared luminescent block is almost not reduced after the prepared luminescent block is stored in air for several months. Meanwhile, the perovskite quantum dots with different colors prepared from different raw materials can be effectively polymerized with polymer monomers in situ, so that the photoluminescence block with almost the whole visible light range from purple to near infrared is obtained.
Owner:NANJING UNIV OF SCI & TECH
Preparation method of surface-modified colloidal state silicon nanocrystal
ActiveCN107057691AEffective control of particle size distribution rangeEnhanced photoluminescence intensityMaterial nanotechnologyNitrogen and non-metal compoundsDispersityOrganic solvent
The invention relates to a preparation method of a surface-modified colloidal state silicon nanocrystal. The preparation method comprises the following steps that (1) a mixed liquid of nanometer silicon powder and an organic solvent is subjected to laser cauterization treatment under the stirring state; (2) the mixed liquid after laser cauterization treatment is subjected to separation treatment, and the colloidal state silicon nanocrystal is obtained. The particle size distribution range of the colloidal state silicon nanocrystal prepared with the preparation method is controllable, the dispersity is good, no agglomeration occurs, and oxidation can be avoided.
Owner:SHANGHAI UNIV OF ENG SCI
A method for improving the thermal stability of manganese-doped perovskite quantum dots
InactiveCN108117870BImprove thermal stability of luminescenceIncreased thermal stability of luminescenceLuminescent compositionsSemiconductor devicesManganeseQuantum dot
The invention provides a method for improving luminous thermal stability of manganese-doped perovskite quantum dots, belonging to the technical field of material preparation. The method comprises thefollowing steps: preparing a Mn:CsPbCl3 quantum dot solution; mixing the Mn:CsPbCl3 quantum dot solution and a PDMS solution to obtain a mixed solution III; dispensing the mixed solution III onto a silicon substrate to form a film, placing the film in a vacuum unit to perform continuous changed temperature heat treatment and conventional annealing heat treatment so as to obtain samples subjected to heat treatment, and performing luminous thermal stability test on the samples subjected to heat treatment; or, dispensing the obtained mixed solution III and Cu:ZnInS / ZnS quantum dots on a blue LEDchip, preparing a white LED device, drying, and performing luminous thermal stability test on the device. With the adoption of PDMS coating, luminescence quenching brought by ligand drop and size growth can be obviously reduced, and the luminous thermal stability of the quantum dots is improved.
Owner:JILIN NORMAL UNIV
Method for enhancing optoelectronic properties of conjugated polymers
InactiveUS9048429B2Enhanced photoluminescence intensityNanoinformaticsSolid-state devicesPolymerMolecular physics
The present invention provides a method for enhancing optoelectronic properties of polymers that contain conjugated moieties in their molecular structures (hereby denoted as “conjugated polymers”), to be used in lighting, photovoltaics, other various optoelectronic devices and applications. The method of the present invention includes preparing a conjugated polymer layer or multiple conjugated polymer layers and imprinting the conjugated polymer layer or layers through the application of a mold or multiple molds.
Owner:NATIONAL TSING HUA UNIVERSITY
Preparing Er-doped alumina optical waveguide film by Er ion injected boehmite method
InactiveCN1281987CImprove distribution uniformityGood dispersionOptical light guidesPhotoluminescenceErbium doping
Owner:DALIAN UNIV OF TECH
A silicon-based photoelectric material and its preparation method
ActiveCN109449224BHigh strengthEnhanced photoluminescence intensitySemiconductor/solid-state device manufacturingSemiconductor devicesLuminous intensityPhotoluminescence
The invention is applicable to the technical field of photoelectricity, and provides a silicon-based photoelectric material, which is characterized by comprising: a monocrystalline silicon wafer, an Er-doped CeO2 thin film attached to the monocrystalline silicon wafer, and an Ag particle layer attached to the surface of the Er-doped CeO2 thin film. Compared with a silicon-based Er-doped CeO2 thinfilm material in which Ag particles are not deposited, the silicon-based photoelectric material provided by the embodiment of the invention has the advantages that the excitation peak shifts to the left, the photoluminescence intensity is obviously improved, especially the luminescence peak intensity of the ~1540nm wavelength of Er3+ is obviously increased, the luminescence efficiency is obviouslyimproved, the luminescence performance is greatly improved, and the silicon-based photoelectric material is more suitable for industrial applications.
Owner:溧阳紫宸新材料科技有限公司
GaN-based light-emitting diode epitaxial wafer and manufacturing method thereof
ActiveCN108493310BImprove crystal qualityImprove luminous efficiencySemiconductor devicesEngineeringGallium nitride
The invention discloses a gallium nitride-based light-emitting diode epitaxial wafer and a production method thereof, belonging to the technical field of semiconductors. The epitaxial wafer comprisesa substrate, a low-temperature buffer layer, a three-dimensional nucleating layer, a two-dimensional restoration layer, a gallium nitride-free layer, an N-type semiconductor layer, an active layer anda P-type semiconductor layer, wherein the low-temperature buffer layer, the three-dimensional nucleating layer and the two-dimensional restoration layer are sequentially stacked to the substrate, a first surface of the gallium nitride-free layer is paved on the two-dimensional restoration layer, and a plurality of pits are formed in a second surface of the gallium nitride-free layer, are respectively of an inverse cone shape and are distributed in the second surface of the gallium nitride-free layer at intervals; and the first surface of the N-type semiconductor layer is paved in the multiplepits and the second surface of the gallium nitride-free layer, a second surface of the N-type semiconductor layer is a plane, the active layer and the P-type semiconductor layer are sequentially stacked on the second surface of the N-type semiconductor layer, and the second surface is opposite to the first surface. According to the gallium nitride-based light-emitting diode epitaxial wafer, the light-emitting efficiency of an LED can be improved.
Owner:HC SEMITEK ZHEJIANG CO LTD
A preparation method of surface-modified colloidal silicon nanocrystals
ActiveCN107057691BEffective control of particle size distribution rangeEnhanced photoluminescence intensityMaterial nanotechnologyNitrogen and non-metal compoundsDispersityOrganic solvent
The invention relates to a preparation method of a surface-modified colloidal state silicon nanocrystal. The preparation method comprises the following steps that (1) a mixed liquid of nanometer silicon powder and an organic solvent is subjected to laser cauterization treatment under the stirring state; (2) the mixed liquid after laser cauterization treatment is subjected to separation treatment, and the colloidal state silicon nanocrystal is obtained. The particle size distribution range of the colloidal state silicon nanocrystal prepared with the preparation method is controllable, the dispersity is good, no agglomeration occurs, and oxidation can be avoided.
Owner:SHANGHAI UNIV OF ENG SCI
Method for raising radiation of silicone based crystal thin film by use of process of plasma
InactiveCN100385693CEnhanced photoluminescence intensityHigh gainSemiconductor devicesPhotoluminescenceLow symmetry
Specially, the invention is related to method for raising luminescence of silicon based crystal thin film by using process of plasma. The method includes steps: (1) preparing Er-Si-O sol according to certain ratio of chemical dose; (2) spin coating a layer of thin film of Er-Si-O dried gel xerogel on conventional processed silicon substrate; (3) high sintering to reach total thickness of thin film of Er-Si-O dried gel xerogel, and generating thin film of Er-Si-O crystal in situ; (4) processing thin film of silicon based Er-Si-O crystal by using N plasma produced by equipment of plasma enhanced chemical vapor deposition (PECVD); (5) two times of annealing thin film of Er-Si-O crystal processed by plasma in order to diffuse N element in thin film well, lower symmetry of crystal field around Er3+ ions, and raise intensity of photoluminescence.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
CuO-based composite material with high photoelectric property
ActiveCN113549453AImprove photoelectric performanceEnhanced photoluminescence intensityCopper oxides/halidesLuminescent compositionsPhotoluminescenceComposite material
The invention discloses a CuO-based composite material with high photoelectric property, which is obtained by fully mixing CuO powder and MoS2 powder according to a molar ratio of (4: 1)-(20: 1), tabletting and then annealing at 700-850 DEG C for 5-10 minutes. CuO is subjected to MoS2 doping modification, so that the photoluminescence intensity of the obtained composite material can reach about 108 times of the photoelectric property of a pure CuO material at most. The composite material is expected to become a novel material in the field of photoelectric property materials.
Owner:SHAANXI NORMAL UNIV
Method for improving photoluminescence efficiency of upconversion material
InactiveCN102517019BHas resonance enhancing propertiesIncrease the intensity of the luminescence peakLuminescent compositionsNonlinear opticsPhotoluminescence
The invention relates to a method for improving photoluminescence efficiency of an upconversion material. The method is used for preparing the NaY1-x-yYbxEryF4 upconversion material containing nano-silver particles by a co-sintering process, and the photoluminescence efficiency of the NaY1-x-yYbxEryF4 upconversion material containing the nano-silver particles can be effectively improved by effectively mixing the nano-silver particles with the upconversion material and utilizing a resonance enhancement property of a high-energy local electric field of localization surface plasmon polaritons to the nonlinear optical process. The method disclosed by the invention has the benefits that the emission peak intensity at 411nm, 524nm, 544nm and 657nm can be improved by above 15% under the excitation of incident photons in the wavelength of 980nm, the gain which is above 20% can be obtained in a full spectrum range between 300-800nm, and a fluorescence enhancement effect is significant.
Owner:NANKAI UNIV
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