A silicon-based photoelectric material and its preparation method

A photoelectric material and silicon-based technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve the problems of low luminous efficiency and achieve the effects of improved luminous performance, increased luminous peak intensity, and improved luminous efficiency

Active Publication Date: 2020-12-25
溧阳紫宸新材料科技有限公司
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0004] However, Er-doped CeO 2 The luminous efficiency of silicon is still very low, and its luminous performance is still far away from industrial applications. Therefore, providing a silicon-based optoelectronic material with high luminous efficiency and suitable for industrial applications has become an urgent problem to be solved.

Method used

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  • A silicon-based photoelectric material and its preparation method
  • A silicon-based photoelectric material and its preparation method
  • A silicon-based photoelectric material and its preparation method

Examples

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preparation example Construction

[0025]An embodiment of the present invention provides a method for preparing a silicon-based optoelectronic material, including: obtaining a clean monocrystalline silicon wafer; preparing Er-doped CeO on the surface of the monocrystalline silicon wafer2Thin film, to obtain silicon-based Er-doped CeO2Thin film; CeO doped in the Er2Prepare Ag film on the surface of the film to obtain Er-doped CeO on silicon2Thin film Ag film; doping the silicon-based Er with CeO2The thin-film Ag film is heat-treated under the protection of Ar gas, so that the Ag film is formed into an Ag particle layer, thereby obtaining a silicon-based photoelectric material.

[0026]As follows, the preparation method of the silicon-based optoelectronic material provided by the embodiment of the present invention will be described in detail through the examples.

Embodiment 1

[0028]Perform RCA standard cleaning on monocrystalline silicon wafers;

[0029]Rinse the cleaned monocrystalline silicon wafer with a HF solution of HF: water=1:4 to obtain a clean monocrystalline silicon wafer;

[0030]Preparation of 150nm thick Er-doped CeO on the surface of clean monocrystalline silicon wafers2film;

[0031]Doping with CeO in Er2Prepare 5nm thick Ag film on the surface of the film;

[0032]Doping the silicon-based Er with CeO2The thin Ag film is placed in a heat treatment device, and Ar gas is ventilated until the air in the heat treatment device is exhausted;

[0033]Under the condition of maintaining Ar gas, control the heat treatment equipment to heat up to 400°C at a rate of 100°C / s, continue the heat preservation for 1 min, and turn off the power;

[0034]Under the condition of keeping Ar gas, cool to room temperature to get.

Embodiment 2

[0036]Perform RCA standard cleaning on monocrystalline silicon wafers;

[0037]Rinse the cleaned monocrystalline silicon wafer with a HF solution of HF: water=1:4 to obtain a clean monocrystalline silicon wafer;

[0038]Preparation of 50nm thick Er-doped CeO on the surface of clean monocrystalline silicon wafers2film;

[0039]Doping with CeO in Er2Prepare 10nm thick Ag film on the surface of the film;

[0040]Doping the silicon-based Er with CeO2The thin-film Ag film is placed in a heat treatment device, and Ar gas is vented until the air in the heat treatment device is exhausted;

[0041]Under the condition of maintaining Ar gas, control the heat treatment equipment to heat up to 450°C at a rate of 150°C / s, continue to keep the temperature for 1.5 minutes, and turn off the power;

[0042]Under the condition of keeping Ar gas, cool to room temperature to get.

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Abstract

The invention is applicable to the technical field of photoelectricity, and provides a silicon-based photoelectric material, which is characterized by comprising: a monocrystalline silicon wafer, an Er-doped CeO2 thin film attached to the monocrystalline silicon wafer, and an Ag particle layer attached to the surface of the Er-doped CeO2 thin film. Compared with a silicon-based Er-doped CeO2 thinfilm material in which Ag particles are not deposited, the silicon-based photoelectric material provided by the embodiment of the invention has the advantages that the excitation peak shifts to the left, the photoluminescence intensity is obviously improved, especially the luminescence peak intensity of the ~1540nm wavelength of Er3+ is obviously increased, the luminescence efficiency is obviouslyimproved, the luminescence performance is greatly improved, and the silicon-based photoelectric material is more suitable for industrial applications.

Description

Technical field[0001]The invention belongs to the field of optoelectronic technology, and in particular relates to a silicon-based optoelectronic material and a preparation method thereof.Background technique[0002]Silicon-based optoelectronic materials have been widely concerned and studied in recent years due to their compatibility with existing integrated circuit processes and excellent performance. One of the keys to realizing silicon-based optoelectronic interconnection is to achieve effective light emission on silicon. However, silicon, the basic material of the traditional microelectronics industry, as an indirect band gap semiconductor material, has low luminous efficiency and cannot achieve effective light emission. For this reason, people have proposed the idea of ​​integrating an effective light-emitting layer on a silicon substrate. .[0003]Because of Ce4+The ionic radius is close to that of the trivalent rare earth ion, which is expected to dissolve more dilute main ions ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/032H01L21/02
CPCH01L21/02521H01L21/02554H01L21/0257H01L31/032H01L31/0321
Inventor 高志飞郑灵浪谢浩尤新安王贤江
Owner 溧阳紫宸新材料科技有限公司
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