GaN-based light-emitting diode epitaxial wafer and manufacturing method thereof

Abstract

The invention discloses a gallium nitride-based light-emitting diode epitaxial wafer and a production method thereof, belonging to the technical field of semiconductors. The epitaxial wafer comprisesa substrate, a low-temperature buffer layer, a three-dimensional nucleating layer, a two-dimensional restoration layer, a gallium nitride-free layer, an N-type semiconductor layer, an active layer anda P-type semiconductor layer, wherein the low-temperature buffer layer, the three-dimensional nucleating layer and the two-dimensional restoration layer are sequentially stacked to the substrate, a first surface of the gallium nitride-free layer is paved on the two-dimensional restoration layer, and a plurality of pits are formed in a second surface of the gallium nitride-free layer, are respectively of an inverse cone shape and are distributed in the second surface of the gallium nitride-free layer at intervals; and the first surface of the N-type semiconductor layer is paved in the multiplepits and the second surface of the gallium nitride-free layer, a second surface of the N-type semiconductor layer is a plane, the active layer and the P-type semiconductor layer are sequentially stacked on the second surface of the N-type semiconductor layer, and the second surface is opposite to the first surface. According to the gallium nitride-based light-emitting diode epitaxial wafer, the light-emitting efficiency of an LED can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. LED has attracted wide attention due to its advantages of energy saving, environmental protection, high reliability, and long service life. For civil lighting, luminous efficiency and service life are the main criteria, so increasing the luminous efficiency of LEDs and improving the antistatic ability of LEDs is particularly critical for the wide application of LEDs. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing LED epitaxial wafer includes a substrate, a buffer layer, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the buff...

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Problems solved by technology

[0006] The embodiment of the present invention provides a gallium nitride-based light-emitting diode epitaxial wafer and its manufacturing method, which can solve the problem that the stress and defects caused by the lattice mismatch of heterogeneous materials in the prior art affect the crystal quality of the epitaxial wafer and lead to low LED luminous efficiency. question

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