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CuO-based composite material with high photoelectric property

A technology for composite materials and photoelectric properties, applied in the direction of luminescent materials, molybdenum sulfide, chemical instruments and methods, etc., can solve the problems of limiting photoelectric applications, severe carrier recombination, and many defects, and achieve high light absorption coefficient and temperature window Wide, low-cost effects

Active Publication Date: 2021-10-26
SHAANXI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

CuO produced by these methods is mostly amorphous and nanocrystalline, with many defects and serious carrier recombination, which seriously limits its optoelectronic applications.

Method used

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  • CuO-based composite material with high photoelectric property
  • CuO-based composite material with high photoelectric property
  • CuO-based composite material with high photoelectric property

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Combine CuO powder with MoS 2 The powder is fully ground and mixed at a molar ratio of 10:1, and then pressed using a tablet machine at a pressure of 15MPa for 8-10s to form a disc with a thickness of 0.8-1.2mm. The resulting wafer was placed on quartz glass and annealed in an annealing furnace at an annealing temperature of 700°C for 5 minutes to obtain CuO / MoS 2 composite material.

[0024] The material was characterized by photoluminescence (PL) and X-ray diffraction (XRD), the results are shown in figure 1 with figure 2 . figure 1 The PL test results show that the PL peak intensity of the obtained composite material is 4.85 times that of the CuO material obtained under the same annealing temperature and time (the peak value is increased from 200 to 970). figure 2 The XRD test showed that a large amount of CuO and newly formed CuMo were present in the resulting composite 2 S 3 .

Embodiment 2

[0026] Combine CuO powder with MoS 2 The powder is fully ground and mixed at a molar ratio of 8:1, and then pressed using a tablet machine at a pressure of 15MPa for 8-10s to form a disc with a thickness of 0.8-1.2mm. The resulting wafer was placed on quartz glass and annealed in an annealing furnace at an annealing temperature of 800°C for 5 minutes to obtain CuO / MoS 2 composite material.

[0027] The material was characterized by photoluminescence (PL) and X-ray diffraction (XRD), the results are shown in image 3 with Figure 4 . image 3 The PL test results show that the PL peak intensity of the obtained composite material is 108.71 times that of the CuO material obtained under the same annealing temperature and time (the peak value is increased from 200 to 21741). Figure 4 The XRD test of the obtained composites shows that there are a large amount of CuO and the newly formed CuMoO 4 .

Embodiment 3

[0029] Combine CuO powder with MoS 2 The powder is fully ground and mixed at a molar ratio of 10:1, and then pressed using a tablet machine at a pressure of 15MPa for 8-10s to form a disc with a thickness of 0.8-1.2mm. The resulting wafer was placed on quartz glass and annealed in an annealing furnace at an annealing temperature of 800°C for 5 minutes to obtain CuO / MoS 2 composite material.

[0030] The material was characterized by photoluminescence (PL) and X-ray diffraction (XRD), the results are shown in Figure 5 with Image 6 . Figure 5 The PL test results show that the PL peak intensity of the obtained composite material is 15.6 times that of the CuO material obtained under the same annealing temperature and time (the peak value is increased from 200 to 3120). Image 6 The XRD test of the obtained composites shows that there are a large amount of CuO and the newly formed CuMoO 4 and Cu 6 Mo 5 o 18 .

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Abstract

The invention discloses a CuO-based composite material with high photoelectric property, which is obtained by fully mixing CuO powder and MoS2 powder according to a molar ratio of (4: 1)-(20: 1), tabletting and then annealing at 700-850 DEG C for 5-10 minutes. CuO is subjected to MoS2 doping modification, so that the photoluminescence intensity of the obtained composite material can reach about 108 times of the photoelectric property of a pure CuO material at most. The composite material is expected to become a novel material in the field of photoelectric property materials.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic materials, and in particular relates to a CuO-based composite material with high optoelectronic properties. Background technique [0002] Semiconductor materials are playing an increasingly important role in optoelectronics. However, the high production cost of high-performance single crystal semiconductor materials limits their wide-scale application. Amorphous and nanocrystalline materials are low in production cost and suitable for large-scale applications. [0003] Copper oxide (CuO) is a p-type semiconductor material, black, and belongs to the monoclinic crystal system. It is a typical transition metal oxide with abundant earth resources and low toxicity. CuO has the most ideal band gap (1.4eV) and very high light absorption coefficient. However, CuO has a high melting point (1446° C.), and decomposes near the melting point. The preparation methods of CuO semiconducto...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/68C01G3/02C01G39/06
CPCC09K11/681C01G3/02C01G39/06C01P2002/72
Inventor 高斐张超群喻智豪李佳辉李元瑞石伯男刘生忠
Owner SHAANXI NORMAL UNIV
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