Preparing Er-doped alumina optical waveguide film by Er ion injected boehmite method

An erbium alumina, erbium ion technology, applied in the directions of light guides, optics, optical components, etc., can solve the problems of low ion distribution uniformity, low ion dispersion, and decreased luminescence performance.

Inactive Publication Date: 2006-10-25
DALIAN UNIV OF TECH
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Problems solved by technology

[0006] The purpose and task of the present invention are to overcome the deficiencies in the prior art: 1. the Er-doped ion implantation method obtains 3+ Ionic Al 2 o 3 In the thin film, Er 3+ ions in Al 2 o 3 Gaussian distribution in the film matrix, Er 3+ The uniformity of ion distribution is low, ② Er-doped prepared by sol-gel method 3+ Ionic Al 2 o 3 In the thin film, Er 3+ ions in Al 2 o 3 Easy to agglomerate in the film matrix, Er 3+ Ion dispersity is low, both of which cause the luminescent performance to decline, and the present invention provides a 3+ A method for preparing erbium-doped alumina optical waveguide thin films by implanting erbium ions into boehmite with ion dispersion, distribution uniformity and excellent luminous performance, and the technical solution of the present invention is specially proposed

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  • Preparing Er-doped alumina optical waveguide film by Er ion injected boehmite method
  • Preparing Er-doped alumina optical waveguide film by Er ion injected boehmite method
  • Preparing Er-doped alumina optical waveguide film by Er ion injected boehmite method

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Experimental program
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Effect test

Embodiment 1

[0035] An optical communication device production unit requires SiO 2 / Si substrate, prepare 0.3±0.03μm thick doped 0.1±0.01mol% Er 3+ Ionic Al 2 o 3 Optical waveguide film, its substrate size gets 30mm * 20mm * 0.5mm, adopts the method of the present invention, and its steps are as follows:

[0036] The first step, the preparation of γ-AlOOH sol,

[0037] Deionized water was preheated to 90°C with a constant temperature water bath, and then Al(OC 3 h 7 ) 3 , where H 2 O and Al(OC 3 h 7 ) 3 The molar ratio of Al(OC 3 h 7 ) 3 Completely hydrolyzed to generate γ-AlOOH precipitate, the hydrolyzed mixture was stirred at 90°C and evaporated until no more (CH 3 ) 2 CHOH, join HNO 3 Desolvation, HNO 3 and Al(OC 3 h 7 ) 3 The molar ratio of γ-AlOOH is 0.15: 1, and the stirring is continued for 16h, and finally a transparent, stable γ-AlOOH sol is obtained for use;

[0038] In the second step, the SiO 2 / Si substrate coated with a layer of γ-AlOOH xerogel film,

...

Embodiment 2

[0049] An optical communication device production unit requires SiO 2 / Si substrate, prepare 1.0±0.1μm thick doped 5±0.2mol% Er 3+ Ionic Al 2 o 3 Optical waveguide film, its substrate size gets 30mm * 20mm * 0.5mm, adopts the method of the present invention, and its steps are as follows:

[0050] The first step, the preparation of γ-AlOOH sol,

[0051] Deionized water was preheated to 90°C with a constant temperature water bath, and then Al(OC 4 h 9 ) 3 , where H 2 O and Al(OC 4 h 9 ) 3 The molar ratio of Al(OC 4 h 9 ) 3 Completely hydrolyzed to generate γ-AlOOH precipitate, the hydrolyzed mixture was stirred at 90°C and evaporated until no more (CH 3 ) 2 CHOH, join HNO 3 Desolvation, HNO 3 and Al(OC 4 h 9 ) 3 The molar ratio of γ-AlOOH is 0.15: 1, and the stirring is continued for 16h, and finally a transparent, stable γ-AlOOH sol is obtained for use;

[0052] In the second step, the SiO 2 / Si substrate coated with a layer of γ-AlOOH xerogel film,

[005...

Embodiment 3

[0063] An optical communication device production unit requires SiO 2 / Si substrate, prepare 0.8±0.08μm thick doped 1±0.1mol% Er 3+ Ionic Al 2 o 3 Optical waveguide film, its substrate size gets 30mm * 20mm * 0.5mm, adopts the method of the present invention, and its steps are as follows:

[0064] The first step, the preparation of γ-AlOOH sol,

[0065] Its method is completely with the first step in embodiment 2, is omitted here;

[0066] In the second step, the SiO 2 / Si substrate coated with γ-AlOOH xerogel film,

[0067] The surface will be grown with 10 μm thick SiO 2 thin-film Si flakes with an immersion viscosity of 1 × 10 -3 5min in Pa·s γ-AlOOH sol solution, at 400mm·min -1 Pull out at a constant speed, dry at 300°C for 1 hour, and pull once to obtain a γ-AlOOH xerogel film with a thickness of 0.4 μm;

[0068] The third step, the Er 3+ Ion implantation coated γ-AlOOH xerogel thin film,

[0069] From the second step, it can be seen that the thickness of the ...

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Abstract

In the field of optoelectronic materials and devices, a method for preparing erbium-doped alumina optical waveguide thin films by implanting erbium ions into boehmite, characterized by in-situ synthesis of erbium-doped Al by sol-gel and ion implantation composite processes 2 o 3 Optical waveguide film, by pulling method or spinning method on SiO 2 / Si substrate is coated with γ-AlOOH xerogel film, then erbium ions are injected into the γ-AlOOH xerogel film, and erbium-doped Al is synthesized in situ by high temperature sintering 2 o 3 Optical waveguide film, process: on SiO 2 / Si substrate coated with γ-AlOOH xerogel film; erbium ions implanted into the γ-AlOOH xerogel film; repeating the first and second steps to obtain the final total thickness and total implantation of the γ-AlOOH xerogel film doped with erbium ions Erbium ion dosage; sinter the γ-AlOOH xerogel film doped with erbium ions at 600-1000°C, pass 2Er+2γ-AlOOH→(Al, Er) 2 o 3 +H 2 The chemical and physical recombination process of O to prepare erbium-doped Al 2 o 3 Optical waveguide film. Advantages: Compared with the prior art, this type of thin film has high erbium ion distribution uniformity and dispersion, and the photoluminescence intensity is increased by 3 to 6 times.

Description

technical field [0001] The invention relates to a method for preparing an erbium-doped alumina optical waveguide film by injecting erbium ions into boehmite, and belongs to the field of optoelectronic materials and devices. Background technique [0002] Optical fiber communication emerged in the 1970s. It has the advantages of wide transmission frequency, large communication capacity, strong anti-electromagnetic interference, less crosstalk, good confidentiality, light weight and small size, and has become one of the main pillars of modern communication networks. one. [0003] In optical fiber communication, loss and attenuation will inevitably occur when the optical signal is transmitted in the optical fiber. Therefore, when the optical fiber communication line is long, the attenuated optical signal needs to be amplified so that the optical signal can continue to be transmitted in the optical fiber. The device that amplifies the optical signal is called a repeater. The tra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B6/00
Inventor 雷明凯王兴军杨涛王辉曹保胜
Owner DALIAN UNIV OF TECH
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