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InGaAs/AlGaAs single quantum well and multi-quantum well semiconductor laser active region epitaxial structure

A multi-quantum well structure and multi-quantum well technology, which is applied in the field of semiconductor materials, can solve the problem of small GaAs band gap and achieve the effects of enhanced luminous intensity, enhanced photoluminescence intensity, and small FWHM

Inactive Publication Date: 2020-08-04
CHANGCHUN UNIV OF SCI & TECH
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Problems solved by technology

[0003] In order to solve the problem that the band gap of GaAs in InGaAs/GaAs is small in the semiconductor laser active region material system with a wavelength of 900-950nm, the present invention provides a new InGaAs/AlGaAs single quantum well and multi-quantum well structure as The epitaxial s

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  • InGaAs/AlGaAs single quantum well and multi-quantum well semiconductor laser active region epitaxial structure
  • InGaAs/AlGaAs single quantum well and multi-quantum well semiconductor laser active region epitaxial structure
  • InGaAs/AlGaAs single quantum well and multi-quantum well semiconductor laser active region epitaxial structure

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Embodiment 1

[0032] In this embodiment, the structure of the active region of the semiconductor laser is obtained by epitaxy using MOCVD technology, in which the upper barrier layer 2 of AlGaAs and the lower barrier layer 6 of AlGaAs are both Al 0.3 GaAs, 680°C high temperature growth; InGaAs potential well layer 4 is In 0.18 GaAs is grown at a low temperature of 600°C; the GaAs upper insertion layer 3 and the GaAs lower insertion layer 5 are 0nm respectively, and the upper and lower insertion layers are grown at a low temperature of 600°C and a high temperature of 680°C, respectively. In order to characterize the luminous efficiency and crystal quality of the active region of the multi-quantum well structure, the epitaxial wafer was tested by photoluminescence and atomic force microscopy. Such as figure 2 As shown, it is a photoluminescence spectrum diagram, and the luminous intensity is almost 0 (relative intensity). Such as image 3 As shown, it is the surface topography map of atom...

Embodiment 2

[0034] In this embodiment, the structure of the active region of the semiconductor laser is obtained by epitaxy using MOCVD technology, in which the upper barrier layer 2 of AlGaAs and the lower barrier layer 6 of AlGaAs are both Al 0.3 GaAs, 680°C high temperature growth; InGaAs potential well layer 4 is In 0.18 GaAs is grown at a low temperature of 600°C; the GaAs upper insertion layer 3 and the GaAs lower insertion layer 5 are 4nm, and the upper and lower insertion layers are grown at a low temperature of 600°C and a high temperature of 680°C, respectively. In order to characterize the luminous efficiency and crystal quality of the active region of the multi-quantum well structure, the epitaxial wafer was tested by photoluminescence and atomic force microscopy. Such as figure 2 As shown, it is a photoluminescence spectrum diagram, the luminous intensity is 7544 (relative intensity), the half-maximum width is 16.5nm, and the lasing wavelength is 937nm. Such as Figure 4 ...

Embodiment 3

[0036] In this embodiment, the structure of the active region of the semiconductor laser is obtained by epitaxy using MOCVD technology, in which the upper barrier layer 2 of AlGaAs and the lower barrier layer 6 of AlGaAs are both Al 0.3 GaAs, 680°C high temperature growth; InGaAs potential well layer 4 is In 0.18GaAs is grown at a low temperature of 600°C; the GaAs upper insertion layer 3 and the GaAs lower insertion layer 5 are 6nm, and the upper and lower insertion layers are grown at a low temperature of 600°C and a high temperature of 680°C, respectively. In order to characterize the luminous efficiency and crystal quality of the active region of the multi-quantum well structure, the epitaxial wafer was tested by photoluminescence and atomic force microscopy. Such as figure 2 As shown, it is a photoluminescence spectrum diagram, the luminous intensity is 13361 (relative intensity), the half-maximum width is 14.5nm, and the lasing wavelength is 937nm. Such as Figure 5 ...

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Abstract

The invention discloses an InGaAs/AlGaAs single quantum well and multiple quantum well semiconductor laser active region epitaxial structure. The structure sequentially comprises a GaAs cover layer, an AlGaAs upper barrier layer, a GaAs upper insertion layer, an InGaAs potential well layer, a GaAs lower insertion layer, an AlGaAs lower barrier layer, a GaAs buffer layer and an N-type substrate from top to bottom. The GaAs (100) crystal orientation deviates to (110) for 2 degrees in the N-type substrate. According to the invention, the problem of narrow GaAs band gap in InGaAs/GaAs in a semiconductor laser active region material system with the wavelength of 900-950nm is solved.

Description

technical field [0001] The invention belongs to the field of semiconductor materials, in particular to an InGaAs / AlGaAs single quantum well and multi-quantum well epitaxy structure in the active region of a semiconductor laser with a length of 900-950nm. Background technique [0002] Semiconductor lasers have the advantages of wide wavelength range, simple manufacture, low cost, easy mass production, and long life. Due to its advantages of high efficiency, high reliability and miniaturization, semiconductor diode lasers have been widely used in optical communication, optical storage, optical interconnection, laser printing and laser radar ranging. For wavelengths in the 900-950nm band, the GaAs barrier in the InGaAs / GaAs multi-quantum well structure used in the active region of traditional semiconductor lasers is relatively low, which cannot confine carriers in the quantum wells well. Contents of the invention [0003] In order to solve the problem that the band gap of Ga...

Claims

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Application Information

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IPC IPC(8): H01S5/343C23C16/30C23C16/52
CPCC23C16/301C23C16/52H01S5/34333H01S5/34366H01S2304/02
Inventor 王海珠张彬王曲惠邹永刚范杰徐莉马晓辉
Owner CHANGCHUN UNIV OF SCI & TECH
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