fet and method of forming fet

Abstract

An embodiment is a method including forming a first fin and a second fin on a substrate, the first fin and the second fin each including a first crystalline semiconductor material on a substrate and a second crystalline semiconductor material above the first crystalline semiconductor material. Converting the first crystalline semiconductor material in the second fin to a dielectric material, wherein after the converting step, at least a portion of the first crystalline semiconductor material in the first fin remains unconverted. Forming gate structures over the first fin and the second fin, and forming source / drain regions on opposing sides of the gate structures.

Description

technical field [0001] Embodiments of the invention relate to FETs and methods of forming FETs. Background technique [0002] In the pursuit of higher device density, higher performance, and lower cost, as semiconductor devices have advanced to nanotechnology process nodes, challenges from fabrication and design issues have led to the development of three-dimensional devices, such as fin field-effect transistors ( FinFETs). Typical FinFETs are fabricated with thin vertical "fins" (or fin structures) extending from a substrate formed by, for example, etching away a portion of the silicon layer of the substrate. In this vertical fin the channel of the FinFET is formed. A gate is provided over (eg, surrounding) the fin. Having gates on both sides of the channel allows gate control of the channel from both sides. [0003] A challenge, however, is the implementation of such components and processes in semiconductor manufacturing. For example, poor isolation between adjacent ...

AI Technical Summary

Problems solved by technology

[0003] However, there are challenges in the realization of such components and processes in semiconductor manufacturing

For example, poor isolation between adjacent fins results in high leakage current for FinFETs, thereby degrading device performance

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