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Preparing Er-doped alumina optical waveguide film by Er ion injected boehmite method

A technology of erbium alumina and erbium ions, which is applied in the direction of light guides, optics, optical components, etc., can solve the problems of low ion dispersion, decreased luminous performance, and low ion distribution uniformity

Inactive Publication Date: 2005-01-05
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose and task of the present invention are to overcome the deficiencies in the prior art: 1. the Er-doped ion implantation method obtains 3+ Ionic Al 2 o 3 In the thin film, Er 3+ ions in Al 2 o 3 Gaussian distribution in the film matrix, Er 3+ The uniformity of ion distribution is low, ② Er-doped prepared by sol-gel method 3+ Ionic Al 2 o 3 In the thin film, Er 3+ ions in Al 2 o 3 Easy to agglomerate in the film matrix, Er 3+ Ion dispersity is low, both of which cause the luminescent performance to decline, and the present invention provides a 3+ A kind of erbium-doped alumina optical waveguide film prepared by implanting erbium ions into boehmite for ion dispersion, distribution uniformity and excellent luminous performance, the technical solution of the present invention is specially proposed

Method used

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  • Preparing Er-doped alumina optical waveguide film by Er ion injected boehmite method
  • Preparing Er-doped alumina optical waveguide film by Er ion injected boehmite method
  • Preparing Er-doped alumina optical waveguide film by Er ion injected boehmite method

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Experimental program
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Effect test

Embodiment 1

[0035] An optical communication device production unit requires SiO 2 / Si substrate, prepare 0.3±0.03μm thick doped 0.1±0.01mol% Er 3+ Ionic Al 2 o 3 Optical waveguide film, its substrate size gets 30mm * 20mm * 0.5mm, adopts the method of the present invention, and its steps are as follows:

[0036] The first step, the preparation of γ-AlOOH sol,

[0037] Deionized water was preheated to 90°C with a constant temperature water bath, and then Al(OC 3 h 7 ) 3 , where H 2 O and Al(OC 3 h 7 ) 3 The molar ratio of Al(OC 3 h 7 ) 3 Completely hydrolyzed to generate γ-AlOOH precipitate, the hydrolyzed mixture was stirred at 90°C and evaporated until no more (CH 3 ) 2 CHOH, join HNO 3 Desolvation, HNO 3 and Al(OC 3 h 7 ) 3 The molar ratio of γ-AlOOH is 0.15: 1, and the stirring is continued for 16h, and finally a transparent, stable γ-AlOOH sol is obtained for use;

[0038] In the second step, the SiO 2 / Si substrate coated with a layer of γ-AlOOH xerogel film,

...

Embodiment 2

[0049] An optical communication device production unit requires SiO 2 / Si substrate, prepare 1.0±0.1μm thick doped 5±0.2mol% Er 3+ Ionic Al 2 o 3 Optical waveguide film, its substrate size gets 30mm * 20mm * 0.5mm, adopts the method of the present invention, and its steps are as follows:

[0050] The first step, the preparation of γ-AlOOH sol,

[0051] Deionized water was preheated to 90°C with a constant temperature water bath, and then Al(OC 4 h 9 ) 3 , where H 2 O and Al(OC 4 h 9 ) 3 The molar ratio of Al(OC 4 h 9 ) 3 Completely hydrolyzed to generate γ-AlOOH precipitate, the hydrolyzed mixture was stirred at 90°C and evaporated until no more (CH 3 ) 2 CHOH, join HNO 3 Desolvation, HNO 3 and Al(OC 4 h 9 ) 3 The molar ratio of γ-AlOOH is 0.15: 1, and the stirring is continued for 16h, and finally a transparent, stable γ-AlOOH sol is obtained for use;

[0052] In the second step, the SiO 2 / Si substrate coated with a layer of γ-AlOOH xerogel film,

[005...

Embodiment 3

[0063] An optical communication device production unit requires SiO 2 / Si substrate, prepare 0.8±0.08μm thick doped 1±0.1mol% Er 3+ Ionic Al 2 o 3 Optical waveguide film, its substrate size gets 30mm * 20mm * 0.5mm, adopts the method of the present invention, and its steps are as follows:

[0064] The first step, the preparation of γ-AlOOH sol,

[0065] Its method is completely with the first step in embodiment 2, is omitted here;

[0066] In the second step, the SiO 2 / Si substrate coated with γ-AlOOH xerogel film,

[0067] The surface will be grown with 10 μm thick SiO 2 thin-film Si flakes with an immersion viscosity of 1 × 10 -3 5min in Pa·s γ-AlOOH sol solution, at 400mm·min -1 Pull out at a constant speed, dry at 300°C for 1 hour, and pull once to obtain a γ-AlOOH xerogel film with a thickness of 0.4 μm;

[0068] The third step, the Er 3+ Ion implantation coated γ-AlOOH xerogel thin film,

[0069] From the second step, it can be seen that the thickness of the ...

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Abstract

The invention is a method for using erbium ion injected with boehmite to produce erbium-doped aluminum oxide optic wave-guide film in photoelectron material and device field. It synthesizes in situ the erbium doped Al2O3 optic wave-guide film with gel-sol and ion injecting processes, coats gamma-ALOOH dried gel film on the SiO2 / Si base plate with dipping and sash method or rotation painting method, then injects erbium ion into gamma-ALOOH dried gel film, synthesizes the erbium doped Al2O3 optic wave-guide film in situ through high temperature baking, the process is: coats gamma-ALOOH dried gel film on the SiO2 / Si base plate; injects the erbium ion into gamma-ALOOH dried gel film; repeats the first and the second steps, acquires the total thickness and dose of the erbium-doped ion gamma-ALOOH dried gel film; bakes the erbium-doped ion gamma-ALOOH dried gel film in 600-1000deg.C, produces the erbium doped Al2O3 optic wave-guide film through the chemical and physical compound process of 2Er+2gamma-ALOOH->(Al, Er)2O3+H2O. The erbium ion distribution is more even and the dispersant is higher, the photoluminescence intensity can be increased for 3 to 6 times.

Description

technical field [0001] The invention relates to the preparation of an erbium-doped alumina optical waveguide film by implanting erbium ions into boehmite, and belongs to the field of optoelectronic materials and devices. Background technique [0002] Optical fiber communication emerged in the 1970s. It has the advantages of wide transmission frequency, large communication capacity, strong anti-electromagnetic interference, less crosstalk, good confidentiality, light weight and small size, and has become one of the main pillars of modern communication networks. one. [0003] In optical fiber communication, loss and attenuation will inevitably occur when the optical signal is transmitted in the optical fiber. Therefore, when the optical fiber communication line is long, the attenuated optical signal needs to be amplified so that the optical signal can continue to be transmitted in the optical fiber. The device that amplifies the optical signal is called a repeater. The tradit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
Inventor 雷明凯王兴军杨涛王辉曹保胜
Owner DALIAN UNIV OF TECH
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