Method for raising radiation of silicone based crystal thin film by use of process of plasma
A plasma and thin film technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of changing spectral wavelength and intensity, breaking parity selection rules, etc., and achieve the effect of process compatibility and simple preparation
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[0025] image 3 A method for improving the luminescence of silicon-based crystal thin films by plasma treatment, the steps are as follows:
[0026] The first step is to prepare Er-Si-O sol according to a certain stoichiometric ratio
[0027] The preparation process is to take 4.5ml of ethyl orthosilicate according to the chemical dosage under the constant temperature condition of 50°C, and then add the mixed solution H containing water and ethanol. 2 O / C 2 h 5 OH 27ml (where H 2 O 4.5ml, C 2 h 5 OH 22.5ml), magnetically stirred for 1 h to mix the solution evenly and hydrolyze TEOS to obtain a network structure. Weigh ErCl according to chemical dosage 3 ·6H 2 O powder 11.451g (0.03mol), add 40ml of C 2 h 5 OH, with magnetic stirring for 30min, to make ErCl 3 saturated solution. ErCl 3 Add the saturated solution of TEOS, H 2 O, C 2 h 5 Mix the solution with OH and stir it magnetically for 4 h to make the solution evenly mixed.
[0028] In the second step, a laye...
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