Method for high-pressure solid-phase synthesis of iodine-copper-cesium lead-free quantum dot

A cesium lead-free quantum, solid-phase synthesis technology, applied in the field of nanomaterials, can solve problems such as inability to obtain samples and complex preparation processes

Active Publication Date: 2020-10-20
XIANGTAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The currently used substitutes for lead ions include Sn, Bi, and Sb plasma, but since the current synthesis methods for using these ions to replace lead ions are all solution methods, for example, Chinese patent CN201910045416.8 synthesizes copper-doped quantum dots by a solution method, but Its preparation process is extremely complicated and requires precise regulation, and nitrogen gas is also required to prevent copper ions from being oxidized to prevent the required samples from being obtained.

Method used

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  • Method for high-pressure solid-phase synthesis of iodine-copper-cesium lead-free quantum dot
  • Method for high-pressure solid-phase synthesis of iodine-copper-cesium lead-free quantum dot
  • Method for high-pressure solid-phase synthesis of iodine-copper-cesium lead-free quantum dot

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] CsI ​​60mol%;

[0028] CuI 40mol%;

[0029] The sample was prepared by a high-pressure solid-phase reaction method, which specifically included the following steps:

[0030] (1) Take by weighing each required composition raw material respectively by molar ratio;

[0031] (2) Grind and mix each constituent raw material in an agate mortar respectively, put it into a tablet press mold, and hold the pressure at 20 MPa for 10 minutes to make the powder mixture completely tablet-shaped;

[0032] (3) Put the prepared sample into the graphite tube, put the graphite block and the boron nitride block into the tube so that the planes of both ends are parallel, then put the boron nitride tube outside the graphite tube, and place the two ends Put the molybdenum sheet on, and put the electrodes at the same time, so that the planes of the two ends are parallel, and then put it into the mold required by the six-sided top press, so that the two sides of the mold with electrodes are ke...

Embodiment 2

[0035] CsI ​​60mol%;

[0036] CuI 40mol%;

[0037] The sample was prepared by a high-pressure solid-phase reaction method, which specifically included the following steps:

[0038] (1) Take by weighing each required composition raw material respectively by molar ratio;

[0039] (2) Grind and mix each constituent raw material in an agate mortar respectively, put it into a tablet press mold, and hold the pressure at 20 MPa for 10 minutes to make the powder mixture completely tablet-shaped;

[0040] (3) Put the prepared sample into the graphite tube, put the graphite block and the boron nitride block into the tube so that the planes of both ends are parallel, then put the boron nitride tube outside the graphite tube, and place the two ends Put the molybdenum sheet on, and put the electrodes at the same time, so that the planes of the two ends are parallel, and then put it into the mold required by the six-sided top press, so that the two sides of the mold with electrodes are ke...

Embodiment 3

[0043] CsI ​​60mol%;

[0044] CuI 40mol%;

[0045] The sample was prepared by a high-pressure solid-phase reaction method, which specifically included the following steps:

[0046] (1) Take by weighing each required composition raw material respectively by molar ratio;

[0047] (2) Grind and mix each constituent raw material in an agate mortar respectively, put it into a tablet press mold, and hold the pressure at 20 MPa for 10 minutes to make the powder mixture completely tablet-shaped;

[0048] (3) Put the prepared sample into the graphite tube, put the graphite block and the boron nitride block into the tube so that the planes of both ends are parallel, then put the boron nitride tube outside the graphite tube, and place the two ends Put the molybdenum sheet on, and put the electrodes at the same time, so that the planes of the two ends are parallel, and then put it into the mold required by the six-sided top press, so that the two sides of the mold with electrodes are ke...

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Abstract

The invention discloses a method for high-pressure solid-phase synthesis of an iodine-copper-cesium lead-free quantum dot. The method comprises the following steps: uniformly mixing CsI and CuI according to a molar ratio of 3: 2, conducting tabletting, and carrying out treating at a high pressure not lower than 1 GPa to obtain an iodine-copper-cesium quantum dot nanomaterial. According to the invention, copper iodide and cesium iodide are used as precursors, high-pressure solid-phase synthesis is adopted, process is simple and controllable, inert atmosphere protection is not needed in the preparation process, and the obtained copper-cesium iodide quantum dot has high photoluminescence intensity.

Description

technical field [0001] The invention relates to the technical field of nanometer materials, in particular to a method for high-pressure solid-phase synthesis of lead-free perovskite iodine-copper-cesium quantum dots. Background technique [0002] Quantum dots, also known as semiconductor nanocrystals. Usually refers to nanoparticles with a radius smaller than or close to the exciton Bohr radius. Due to the quantum limitation of quantum dots in the three-dimensional direction, quantum dots are zero-dimensional nanomaterials, and the size of quantum dots is generally around a dozen nanometers. Compared with other materials, quantum dots have a quantum confinement effect. As the size of quantum dots decreases, the continuous energy level structure will transform into a discrete and discontinuous energy level structure. After being excited by light with a certain wavelength of energy, the photons that absorb a certain energy in the valence band are excited into the conduction ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G3/00C09K11/61B82Y20/00B82Y40/00
CPCC01G3/006C09K11/616B82Y20/00B82Y40/00C01P2002/60
Inventor 孙立忠陈浩徐昌富申星刘英黎佳昕
Owner XIANGTAN UNIV
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