47 results about "Caesium iodide" patented technology

The invention belongs to the technical field of photovoltaic solar materials, and particularly relates to a high-conversion-efficiency perovskite precursor material and a preparation method thereof. The high-conversion-efficiency perovskite precursor material is composed of phenyl ammonium cesium composite cations, metal halide, an additive, a nuclear auxiliary agent and a solvent. By compounding phenylethyl ammonium iodide and cesium iodide, phenylammonium and cesium cations are introduced into perovskite crystal lattices, organic-inorganic balance of the material is optimized, phenylammonium promotes formation of a quasi-two-dimensional structure, and damp-heat stability is enhanced; cesium ions fill A-site gaps, so that crystal lattices are tighter, and the thermal stability and the photoelectric conversion efficiency are improved; the synergistic matching addition of the metal halide realizes band gap regulation and control and spectrum matching, and quaternary ammonium salt adjusts nucleation and grain growth, so that a uniform film structure is ensured, and defects are reduced; and guanidine salt passivates defects after crystal growth, stabilizes crystal lattices, and improves charge life and device efficiency.

The invention belongs to the technical field of photoelectric materials and devices, and particularly relates to a perovskite thin film and a preparation method and application thereof. A fluorine-containing phosphazene compound is used as a ligand and is mixed with a perovskite precursor solution composed of lead iodide, formamidine iodine and cesium iodide, spin coating is performed, the fluorine-containing phosphazene compound and part of formamidine cations form hydrogen bonds, part of formamidine cations are anchored at the bottom of a perovskite film, Cs-formamidine cations are uniformly distributed, and the perovskite film is prepared. Meanwhile, the fluorine-containing phosphazene compound and Pb < 2 + > form a coordinate bond, Pb < 2 + > defects are passivated, and the perovskite thin film is obtained through anti-solvent treatment and annealing treatment. The fluorine-containing phosphazene compound interacts with the components in the perovskite precursor solution, so that the nucleation rate of perovskite can be increased, the crystallization rate can be slowed down, the tensile stress can be eliminated, the perovskite does not enter crystal lattices, and the stability and crystallinity of the film are guaranteed. The perovskite thin film can be used for an inverted perovskite solar cell, and the performance and the stability of a device are improved.

The invention discloses a sulfaguanidine modified inorganic tin-based perovskite light-emitting diode and a preparation method thereof, and belongs to the field of luminescent material preparation, the preparation method comprises the following steps: preparing a perovskite precursor solution which comprises cesium iodide, stannous iodide, sulfaguanidine and an organic solvent; applying the perovskite precursor solution to a substrate to form a wet film; carrying out annealing treatment on the wet film so as to form a perovskite light-emitting layer containing CsSnI3 perovskite and sulfaguanidine; a hole transport layer is formed on an anode conductive substrate, and a perovskite light-emitting layer is adopted on the hole transport layer; and sequentially forming an electron transport layer, an electron injection layer and a cathode electrode on the perovskite light-emitting layer. The process is simple and suitable for popularization and application.

The application belongs to the technical field of photovoltaic devices, and relates to preparation and application of a multifunctional organic additive doped CsSnI3 perovskite film; during preparation, a perovskite spin coating liquid is spin coated on an ITO glass substrate to form a precursor film, and the precursor film is subjected to annealing treatment to obtain a CsSnI3 perovskite film; the perovskite spin coating liquid is formed by adding stannous fluoride and 3-amino-pyrazine-2-carboxamide (3-APCA) to a perovskite precursor solution and stirring; the perovskite precursor solution is formed by dissolving cesium iodide and stannous iodide in an organic solvent; and the application is applied to solar cells, light-emitting diodes, photoelectric detectors, photoelectric catalysis and energy storage. The method introduces the multifunctional organic additive 3-APCA, realizes Sn 2+ oxidation inhibition, optimizes film crystallinity and passivates defects, and significantly improves the quality of the CsSnI3 perovskite film; and the application range is wide.

The application discloses a preparation method of a wide-bandgap perovskite photoactive layer, and comprises the following steps: S1, lead iodide powder, cesium iodide powder and ytterbium bromide powder are proportioned according to a proportioning molar ratio, and an inorganic target material is prepared by using a hot-press sintering process; S2, formamidinium hydriodide powder and methylammonium bromide powder are proportioned according to a proportioning molar ratio, and an organic target material is prepared by using a normal-temperature preparation process; S3, a pretreated substrate is placed on a magnetron sputtering sample table, the target materials prepared in steps S1 and S2 are respectively installed on corresponding radio frequency sputtering targets, and the background of a magnetron sputtering system is vacuumized; S4, high-purity argon gas is used as a sputtering gas, and a wide-bandgap perovskite thin film is prepared by using a magnetron co-sputtering method; the sputtering power of the inorganic target material prepared in step S1 is controlled, the sputtering power of the organic target material prepared in step S2 is controlled, and the thickness of the thin film is controlled, so that the high-quality thin film is prepared by using the differential target material preparation process.

The application discloses a preparation method and application of high-purity cesium iodide, which comprises the following steps: firstly, mixing an industrial-grade cesium source powder and an iodine source solution, and preparing a solid powder after vacuum rotary evaporation and drying; then repeatedly washing the powder by using a special detergent, removing impurities, and drying; sintering at a temperature of 200-350 DEG C; dissolving the sintered powder in deionized warm water, and cooling and crystallizing at 0 DEG C; and finally collecting and drying the crystallization product to obtain the high-purity cesium iodide (CsI) finished product. The CsI powder prepared by the application has a purity of more than 99.99%, can obtain more excellent comprehensive performance, and has a simple and controllable process, and has a wide application prospect in the field of perovskite solar cells.

The invention discloses a preparation method of polycation black-phase perovskite microcrystal powder, and belongs to the technical field of new energy and photoelectric materials. The method comprises the following steps: dissolving formamidine iodide (FAI), cesium iodide (CsI), lead iodide (PbI2) and an accelerant n-propylamine hydrochloride (PACl) in an alcohol solvent according to a designed molar ratio to prepare a 0.2-2 mol.L <-1 > uniform solution, and heating and stirring to form a black precipitate; and quickly filtering, washing by using an alcohol solvent to remove the residual additive, and carrying out vacuum drying to obtain the high-purity black-phase microcrystalline powder. The prepared powder has uniform Cs / FA distribution, does not contain any yellow phase, remarkably inhibits cation segregation, improves the crystallization quality and phase stability, is simple in preparation process, is easy to remove auxiliary agent residues, and can be widely applied to preparation of photoelectric devices such as high-efficiency perovskite solar cells and the like.

The invention discloses a bismuth-based perovskite photosynapse transistor and a preparation method thereof, and the bismuth-based perovskite photosynapse transistor is of a layered structure, and sequentially comprises a silicon dioxide / silicon substrate layer, a bismuth-based perovskite light absorption layer doped with stannous iodide, a semiconductor channel layer, and a source / drain electrode layer from bottom to top. The source / drain electrode layer comprises a source electrode and a drain electrode which are respectively arranged on two sides of the upper surface of the semiconductor channel layer; in the preparation process, bivalent tin ions of stannous iodide with relatively strong Lewis acidity compete with trivalent bismuth ions of cesium iodide in a precursor, so that rapid reaction of cesium iodide and bismuth iodide is prevented, the crystallization speed of the bismuth-based perovskite film is slowed down, and unstable tin-iodine bonds can be broken through annealing treatment after combination, so that the performance of the bismuth-based perovskite film is improved. Therefore, the crystallization quality of the bismuth-based perovskite film is regulated and controlled; part of bivalent tin ions in the bismuth-based perovskite light absorption layer are easily oxidized by a DMSO solvent in annealing treatment to form tetravalent tin ions to generate tin vacancies, and the tin vacancies of the bismuth-based perovskite light absorption layer are used for increasing the number of photogenerated charges captured by the bismuth-based perovskite photosynapse transistor. According to the invention, the film forming quality and the carrier lifetime of the bismuth-based perovskite can be improved, so that the conductivity variation range of the device is expanded.

The invention relates to a perovskite precursor solution, a perovskite thin film, a preparation method of the perovskite thin film and a photovoltaic module. The perovskite precursor solution comprises a perovskite precursor, an additive and a mixed solvent; the perovskite precursor is prepared from formamidine hydriodate and lead iodide; the additive comprises cesium iodide and methylamine hydrochloride; the mixed solvent is prepared from N, N-dimethyl formamide, N-methyl pyrrolidone and cyclohexyl pyrrolidone. The composition of the perovskite precursor solution is blended, the high-quality perovskite thin film with the micro-suede surface is spontaneously formed in the perovskite crystallization process, the micro-suede surface structure can increase the contact area between a perovskite layer and a subsequent functional layer, a tight mechanical interlocking effect is generated between the micro-suede surface structure and the interface of the functional layer, and the performance of the perovskite thin film is improved. Therefore, the interface adhesive force of the subsequent functional layer and the metal electrode is obviously improved, and the problem of performance degradation of the perovskite assembly caused by the packaging process is solved.

The invention provides a cesium iodide crystal detector packaging structure and method, and belongs to the technical field of high-energy physical detectors. The cesium iodide crystal detector packaging structure comprises two groups of optical fiber modules, two groups of optical fiber readout SiPM, two groups of crystal readout SiPM and cesium iodide crystals, the two groups of optical fiber modules are tightly attached to the upper surface and the lower surface of the cesium iodide crystal respectively and are orthogonally arranged; the two groups of optical fiber reading SiPMs are respectively arranged on the two groups of optical fiber modules and are used for reading photons propagating to the tail ends of the optical fibers; the two groups of crystal read-out SiPMs are respectively clung to the two side surfaces of the cesium iodide crystal, are orthogonally arranged and are used for reading out photons propagating to the side surfaces of the cesium iodide crystal. According to the invention, photon number measurement can be provided while position resolution is measured, and the energy resolution capability is improved; the structure optimization degree is high, and substance interference does not exist on an incident particle path; the structure is convenient to install, corresponding operation is adopted, and detector packaging can be effectively completed.

The invention provides a solar cell based on a Cu-doped lead-copper alloy perovskite light absorption layer and a preparation method of the solar cell, and the light absorption layer of the solar cell is a Cu-doped lead-copper alloy perovskite thin film Cs0. 05MA 0. 10FA 0. 85Pb1-xCuxI3, the preparation method of the lead-copper alloy perovskite thin film comprises the following steps: adding formamidine hydriodate, methylamine hydriodate, cesium iodide, lead iodide and cuprous iodide powder into a solvent, and uniformly stirring and mixing to prepare a perovskite precursor solution; the PbI2 powder and the CuI powder are uniformly mixed, the uniformly mixed precursor solution is spin-coated, annealing is carried out on a heating stage, the thin film is obtained, the ratio of the PbI2 powder to the CuI powder is 1-x: x, and x is equal to 0-10%. The copper-doped lead-copper alloy perovskite with the three-dimensional octahedral structure synthesized by the method has structural and thermodynamic stability and is high in fluorescence performance and light absorption performance, and the crystallization quality of a thin film is remarkably improved; when the perovskite thin film is used as a light absorption layer of the cell, a perovskite solar cell with high photoelectric conversion efficiency can be prepared, and the perovskite solar cell has excellent ultraviolet resistance and high temperature resistance stability.

The invention discloses a method for regulating wide-band gap perovskite crystallization through CsPb2Br5 and laminated photovoltaic application thereof, and particularly relates to the field of photoelectric materials and devices. Comprising the following steps: preparing a CsPb2Br5 nanosheet; the preparation method comprises the following steps: dissolving cesium iodide, formamidine hydriodate, lead iodide, lead bromide and CsPb2Br5 nanosheets in a solvent to obtain a perovskite precursor solution; wherein the perovskite precursor solution comprises two phases, namely a Cs0.2 FA < 0.8 > PbI < 1.8 > Br < 1.2 > perovskite precursor complex and a CsPb2Br < 5 >; and preparing the perovskite precursor solution into a perovskite thin film of the solar cell to obtain the solar cell. The crystal can be guided to uniformly grow along the vertical direction, the crystal boundary and defects are reduced, the crystal structure is optimized, and the stability and uniformity of the film are enhanced; and photo-induced halogen phase separation and defect formation can be inhibited, so that the photoelectric property and long-term stability of the perovskite thin film are improved.

The present application relates to the field of perovskite microcrystal, and particularly relates to a black-phase CsPbI3 perovskite microcrystal, a full-inorganic thin film and a preparation method thereof.The preparation method comprises the following steps: mixing cesium iodide, lead iodide and a solvent to obtain a precursor solution; mixing the precursor solution, a heterogeneous metal ion stress inducer and a perfluorinated organic ligand, and performing a reaction to obtain the black-phase CsPbI3 perovskite microcrystal.The preparation method of the full-inorganic thin film comprises the following steps: mixing the black-phase CsPbI3 perovskite microcrystal and a high-polarity solvent, and performing dispersion to obtain ink; coating the ink on a substrate, and performing annealing treatment to obtain the full-inorganic thin film.The present application rewrites the thermodynamic stability interval by introducing a lattice stress field in the microcrystal synthesis stage, and realizes low-temperature preparation of the full-inorganic thin film by using the phase template effect.

This invention belongs to the field of scintillator material preparation technology, specifically relating to a method for purifying high-purity cesium iodide and its application in the preparation of cesium iodide scintillator screens. The method involves sequentially mixing and heating cesium iodide-containing waste and residual materials to dissolve them, filtering and removing impurities, adsorption and removing impurities, concentrating and temperature-controlled crystallization, centrifuging, drying, and vacuum packaging. This process comprehensively removes solid particulate impurities, elemental iodine, and various trace metal ions from the raw materials, effectively preventing oxidation and deterioration during purification. The method is simple to operate, highly industrially feasible, and can purify waste materials to a high purity level that meets the requirements of high-performance applications. It allows for the reuse of waste materials at the same purity level, reducing production costs, alleviating raw material supply pressure, and complying with environmental protection requirements. Applying the high-purity cesium iodide obtained by this method to the preparation of cesium iodide scintillator screens using a vacuum thermal evaporation process ensures the excellent performance of the scintillator screens, making them suitable for high-end fields such as medical imaging and non-destructive testing.

The invention discloses a cesium iodide nanocrystalline composite chalcogenide glass ceramic and a preparation method thereof, the chemical formula of the cesium iodide nanocrystalline composite chalcogenide glass ceramic is xGa2S3-ySnS2-(1-x-y) CsI, x is more than or equal to 0.2 and less than or equal to 0.3, and y is more than or equal to 0.2 and less than or equal to 0.6; the preparation method comprises the following steps: preparing a glass mixture according to a chemical formula by taking simple substances Ga, Sn and S and a compound CsI as raw materials; placing the glass mixture in a sealed vacuum quartz ampoule, carrying out melt firing at 850-900 DEG C for more than 12 hours, taking out the glass mixture at 650-700 DEG C, and quenching to form glass; carrying out annealing treatment on the formed glass at 250-290 DEG C / min for 4-6 hours, and then cooling to room temperature at a rate of 0.05-0.2 DEG C / min; and carrying out heat treatment on the obtained matrix glass at 350-390 DEG C for 5-20 hours, and then carrying out furnace cooling to room temperature. The chalcogenide glass ceramic contains uniformly distributed CsI nanocrystals, has good thermal and chemical stability and mechanical strength, and can be used in the technical fields of X-ray detection and infrared thermal imaging.

The invention relates to the field of perovskite solar cells, and discloses a uniformly-oriented pseudo-single crystal perovskite thin film and a preparation method and application thereof.The preparation method comprises the steps that at least one of N, N-dimethyl propenylurea, methyl phenyl sulfoxide and ethanesulfinyl ethane serves as a solvent additive, the solvent additive and N, N-dimethyl formamide are prepared into an organic mixed solvent, and the organic mixed solvent is mixed with N, N-dimethyl formamide; dissolving lead iodide and cesium iodide and / or rubidium chloride in an organic mixed solvent, coating, and heating to obtain a lead iodide film; and depositing an organic amine salt solution on the lead iodide thin film, and performing annealing treatment to obtain the perovskite thin film. By introducing the solvent additives with different coordination capabilities, the reaction activity of the lead iodide precursor is reduced, and the kinetic process of the perovskite generation reaction is effectively delayed, so that the sufficient reaction of the organic amine salt and the lead iodide intermediate phase is promoted; the problems of residual lead iodide impure phase in the perovskite thin film and poor crystallization quality in a traditional two-step method are effectively solved.

The invention relates to the technical field of semiconductor light-emitting devices, and discloses a preparation method of a high-color-purity blue light LED, which comprises the following steps of: mixing cesium iodide and cuprous iodide and reacting to prepare a Cs3Cu2I5 nuclear material; the Cs3Cu2I5 core material is placed in a shell layer precursor solution containing a gallium source to be wrapped and then annealed, and core-shell structure fluorescent powder is obtained; preparing the fluorescent powder with the core-shell structure into slurry, coating a base material with the slurry layer by layer, and performing high-temperature treatment to form a fluorescent material film with Ga concentration gradient; and integrating an ultraviolet LED chip with the fluorescent material film to prepare the high-color-purity blue light LED. According to the invention, the core-shell passivation structure and the concentration gradient film are constructed, and the functionalized packaging resin is matched, so that the quantum yield, the color purity, the light extraction efficiency and the long-term working stability of the blue light LED are improved.

The invention discloses a lead-free perovskite micro-strip / silicon heterojunction photoelectric detector and a preparation method thereof, the device structure of the photoelectric detector is Au / CsAg2I3 / n-Si / EGaIn, and the purpose is to realize rapid response of a low-dimensional lead-free halide perovskite-based photoelectric detector in ultraviolet-visible-near infrared bands. The preparation process comprises the following steps: 1, dissolving cesium iodide and silver iodide in a mixed organic solvent in a certain proportion, and heating and stirring to obtain a precursor solution; 2, taking the cleaned n-type silicon as a substrate, and growing a CsAg2I3 crystal on the substrate by adopting a space limitation growth method; and 3, evaporating a gold electrode on the surface of the grown CsAg2I3 crystal through a mask, and coating a gallium-indium alloy electrode on the surface of the substrate silicon wafer to obtain the lead-free perovskite micro-strip / silicon heterojunction photoelectric detector. The detection performance of the CsAg2I3-based photoelectric detector is remarkably improved through the construction of the heterojunction, and the CsAg2I3-based photoelectric detector shows good responsivity and response speed in the ultraviolet-visible-near infrared band and can be applied to the field of wide-spectrum detection. The photoelectric detector is low in cost, simple in preparation process, green and environment-friendly.

This invention discloses a method for preparing inorganic perovskite thin films assisted by cystamine dihydrochloride. This invention relates to the field of optoelectronic materials and devices, and includes the following specific steps: Step 1: Weigh cesium iodide, lead iodide, and dimethylamine hydroiodide as raw materials, select DMF as the solvent, and then slowly add these raw materials to the DMF solvent. Stirring is performed at room temperature to obtain an inorganic perovskite precursor solution. The advantages of this invention are: by selecting cesium iodide, lead iodide, and dimethylamine hydroiodide in the inorganic perovskite precursor solution, it provides the basic elements for constructing the perovskite crystal structure, ensuring that the thin film possesses basic optoelectronic properties. It enhances the adhesion between the thin film and the substrate, effectively alleviates stress caused by differences in thermal expansion coefficients, and greatly suppresses the structural phase transition of the thin film under high-temperature conditions, successfully solving the problem of a sharp decline in the optoelectronic performance of thin films at high temperatures in existing technologies.

A scintillation crystal can include a cesium halide that is co-doped with thallium and another element. In an embodiment, the scintillation crystal can include CsI:Tl, Me, where Me represents co-doped Sb and Bi. In a particular embodiment, the scintillation crystal may have a cesium iodide host material, a first dopant including a thallium, a second dopant including an antimony, and a third dopant including a bismuth.

The invention discloses a lead-tin perovskite thin film and a preparation method and application thereof, and particularly relates to the field of photoelectric materials and devices. Comprising a bottom-buried interface layer, a lead-tin perovskite layer and an upper interface modification layer which are sequentially arranged from bottom to top, the lead-tin perovskite layer is formed by a lead-tin perovskite precursor solution, and the lead-tin perovskite precursor solution comprises the following components: a two-dimensional perovskite single crystal, lead iodide, stannous iodide, methylamine iodine, formamidine iodine, stannous fluoride and cesium iodide; and the component of the two-dimensional perovskite single crystal is PEA2PbI4. A two-dimensional perovskite single crystal is added into a Pb-Sn perovskite precursor to serve as a heterogeneous nucleation site, Pb-Sn perovskite is guided to longitudinally grow in the direction perpendicular to a substrate, transverse grain boundaries are reduced, and the crystallization quality is improved; meanwhile, as a buried interface and an upper interface modification layer, efficient transmission and extraction of photon-generated carriers in a Pb-Sn perovskite thin film and high efficiency and stability of a Pb-Sn perovskite cell can be realized.

The invention provides cesium iodide and a preparation method thereof, a solar cell and a preparation method thereof, and a photovoltaic module, and the cesium iodide comprises a first substance with reducibility. The cesium iodide provided by the invention is good in stability and easy to store, and the solar cell prepared from the cesium iodide provided by the invention has improved photoelectric conversion efficiency and device stability.

The present invention discloses a method for preparing GeI2 single crystals by a vapor transport method. Germanium oxide, hypophosphorous acid, hydroiodic acid, and cesium iodide are used as raw materials for the powder synthesis of CsGeI3. CsGeI3 powder is placed at the bottom of a quartz tube. After the quartz tube is purged with argon, it is evacuated and then sealed. The quartz tube is heated and held using a Bridgman furnace, and then cooled at a gradient to obtain GeI2 single crystals in the cold zone of the quartz tube. The remaining material at the bottom of the quartz tube is cesium iodide, and this part of cesium iodide can be reused for the synthesis of CsGeI3 powder. The present invention provides a method for preparing high-quality GeI2 single crystals by vapor transport with a simple process, easy industrial production, high repeatability, high yield, high single crystal quality, and low cost.

The invention relates to the technical field of photovoltaic cells, and provides a preparation method of a perovskite thin film and a perovskite cell, and the preparation method of the perovskite thin film comprises the steps: preparing a perovskite precursor solution: dissolving cesium iodide, lead iodide and formamidine iodide in dimethyl sulfoxide (DMSO) to obtain a first solution; dissolving molecules with a bipyridine group and a diphosphate group in an N, N-dimethylformamide (DMF) solution to obtain a second solution; mixing the first solution and the second solution to obtain a perovskite precursor solution; preparing a perovskite thin film: coating the perovskite precursor solution on the top surface of a substrate to perform film forming treatment, and performing annealing treatment to obtain the perovskite thin film; the molecules with the bipyridine group and the diphosphate group comprise 2, 2 '-bipyridine-4, 4'-diphosphon.By means of the method, the problems that internal and surface defects exist in the perovskite thin film, carrier transport is limited by the defects, and the photoelectric conversion efficiency of a perovskite cell is restrained can be solved.

The invention discloses a preparation method of cesium iodide, cesium iodide and application, and relates to the technical field of inorganic materials. According to the preparation method disclosed by the invention, the original crystal form morphology of cesium iodide is changed by adding a specific type of surfactant and using a high-temperature and high-pressure hydrothermal reaction, so that polyhedral crystal forms such as a truncated octahedron, a cube and a rhombic dodecahedron are formed, the specific surface area of cesium iodide is further increased, a larger contact area can be provided, and the stability of a product is improved; and the solubility of cesium iodide in an organic solvent can be improved, and the application effect of cesium iodide in a perovskite material is improved.

The invention discloses a high-stability 2D / 3D tin-based perovskite (CsSnI3) heterojunction thin film transistor and a full-evaporation preparation method. The method comprises the following steps: sequentially evaporating a stannous iodide layer, a stannous fluoride layer, a lead chloride intermediate layer and a cesium iodide layer on a P-type silicon / SiO2 substrate; and annealing to form a two-dimensional Cs2PbI2Cl2 covering layer on the top of the CsSnI3 thin film in situ, thereby constructing the CsSnI3 perovskite semiconductor thin film with a 2D / 3D heterostructure. And finally evaporating gold source and drain electrodes. Compared with a non-doped device, the current switch ratio of the prepared transistor is improved by about 2 orders of magnitude, the mobility is improved by dozens of times, and the threshold voltage is remarkably reduced; and particularly, the air stability is revolutionarily improved, and the stable working time of the device in the air is greatly prolonged to more than 24 hours from the minute level (undoped). The method is simple in process and low in cost, and an effective way is provided for large-area preparation of high-performance and high-stability tin-based perovskite electronic devices.

The application belongs to the technical field of solar cells, and provides a preparation method of inorganic perovskite nanowire film. First, lead iodide is dissolved and stirred uniformly under constant temperature to obtain a lead iodide precursor solution; a precipitating agent is added to the lead iodide precursor solution to obtain light yellow flocculation, and the light yellow flocculation is centrifuged to obtain light yellow colloidal material, which is vacuum dried to obtain a lead iodide composite product; a precursor spin coating solution is obtained based on the lead iodide composite product, the precursor spin coating solution is spin coated on a substrate to form a film, and annealing treatment is performed to obtain a loose lead iodide film layer; the lead iodide film layer is sequentially immersed in a cesium iodide solution and a cesium bromide solution, and then annealing treatment is performed to obtain an inorganic perovskite film, so that the loose PbI2 nanostructure can fully contact and react with the cesium iodide solution and the cesium bromide solution, and a one-dimensional inorganic perovskite nanowire material with good orientation, excellent physical and chemical stability and high crystallinity is prepared.

This invention relates to an inorganic perovskite thin film, its preparation method, and a solar cell. The method includes the following steps: S1: forming a first thin film through a first vapor deposition process; S2: annealing the first thin film to obtain a second thin film; S3: forming a third thin film on the second thin film through a second vapor deposition process; and S4: annealing the second thin film and the third thin film to obtain the inorganic perovskite thin film; wherein, in the first vapor deposition process, the raw materials used for evaporation include cesium bromide and lead iodide; and in the second vapor deposition process, the raw materials used for evaporation include cesium iodide and lead iodide. The inorganic perovskite thin film prepared by the method of one embodiment of this invention, compared with existing inorganic perovskite thin films, improves the phase stability of the perovskite structure without affecting the light absorption range of the prepared solar cell, and simultaneously improves the photoelectric conversion efficiency of the cell.

The application belongs to the technical field of photoelectric materials and devices, and particularly relates to a perovskite film and a preparation method and application thereof. A fluorine-containing phosphazene compound is used as a ligand, mixed with a perovskite precursor solution composed of lead iodide, formamidinium iodide and cesium iodide, and then spin-coated. The fluorine-containing phosphazene compound forms a hydrogen bond with part of the formamidinium cations, anchors the part of the formamidinium cations at the bottom of the perovskite film, and makes the Cs-formamidinium cations uniformly distributed. Meanwhile, the fluorine-containing phosphazene compound forms a coordination bond with Pb 2+ , passivates Pb 2+ defects, and the perovskite film is obtained through an anti-solvent treatment and an annealing treatment. The fluorine-containing phosphazene compound interacts with components in the perovskite precursor solution, can increase a nucleation rate of the perovskite, slow down a crystallization rate, eliminate a tensile stress, and not enter a crystal lattice, thereby guaranteeing stability and crystallinity of the film. The perovskite film can be used for an inverted perovskite solar cell, and can improve device performance and stability.

The present invention relates to the field of perovskite solar cells, and discloses a uniformly oriented quasi-single crystal perovskite film and its preparation method and application. The preparation method comprises: using at least one of N,N-dimethylpropylene urea, methylphenyl sulfoxide, and ethylsulfinylethane as a solvent additive and N,N-dimethylformamide to prepare an organic mixed solvent, dissolving lead iodide and cesium iodide and / or rubidium chloride in the organic mixed solvent and then coating, heating, to obtain a lead iodide film; depositing an organic amine salt solution on the lead iodide film, and annealing to obtain a perovskite film. The present invention reduces the reactivity of the lead iodide precursor by introducing solvent additives with different coordination abilities, effectively delaying the kinetic process of the perovskite formation reaction, thereby promoting the full reaction of the organic amine salt and the lead iodide intermediate phase, and effectively solving the problems of residual lead iodide impurities and poor crystallization quality in the perovskite film in the traditional two-step method.