78 results about "Caesium iodide" patented technology

The invention relates to a preparation technology of a functional film material and provides a method for preparing a thallium-doped caesium iodide (CsI:T1) film. According to the method, the high-performance 50-100 micrometer thallium-doped caesium iodide (CsI:T1) film which is attached to the substrate very well and compatible with a CMOS (Complementary Metal-Oxide-Semiconductor transistor) process can be prepared on a substrate uniformly and compactly by adopting a thermal evaporation mode, and the thallium-doped caesium iodide (CsI:T1) film can be widely applied to X-ray detectors.

It is desirable to achieve a co-incident investigative kV source for a therapeutic MV source—a so-called “beams-eye-view” source. It has been suggested that bremsstrahlung radiation from an electron window be employed; we propose a practical structure for achieving this which can switch easily between a therapeutic beam and a beam-eye-view diagnostic beam capable of offering good image resolution. Such a radiation source comprises an electron gun, a pair of targets locatable in the path of a beam produced by the electron gun, one target of the pair being of a material with a lower atomic number than the other, and an electron absorber insertable into and withdrawable from the path of the beam. In a preferred form, the electron gun is within a vacuum chamber, and the pair of targets are located at a boundary of the vacuum chamber. The lower atomic number target can be Nickel and the higher atomic number target Copper and/or Tungsten. The electron absorber can be Carbon, and can be located within the primary collimator, or within one of a plurality of primary collimators interchangeably locatable in the path of the beam. Such a radiation source can be included within a radiotherapy apparatus, to which the present invention further relates. A flat panel imaging device for this source can be optimised for low energy x-rays rather than high energy; Caesium Iodide-based panels are therefore suitable.

In a photoelectric conversion panel, a plurality of TFTs are formed over an insulating substrate. The TFTs are covered by a first planarizing film. A plurality of photodiodes are formed over the first planarizing film. The photodiodes and the first planarizing film are covered by a second planarizing film. A scintillator contains cesium iodide and is directly vapor-deposited over the photoelectric conversion panel. The scintillator is formed in an area, over the second planarizing film, extending to the outside of an area in which the TFTs and the photodiodes are formed and located inside edges of the first and second polarizing films.

The invention relates to a preparation method of an inorganic perovskite thin film and an application in a solar cell, belonging to the technical field of solar cells. Excess cesium iodide is added asan additive to an inorganic perovskite solutio to deposite a high-quality inorganic perovskite film, the obtained thin film is used as light absorbing layer in the solar cell. The method can obtain the inorganic perovskite thin film with low porosity, uniform and compact, and greatly reduce the annealing temperature of the thin film and greatly reduce the energy consumption. The photovoltaic performance of inorganic halide perovskite solar cells can be greatly improved by applying the device to perovskite solar cells, and the prepared device has excellent environmental stability and repeatability, and is suitable for large-scale industrial production. As that technological condition such as the addition amount of the cesium iodide additive, the thickness of the active layer, the anneal temperature and the like are optimized, the invention is applied to a carbon-based all-inorganic perovskite solar cell, the photoelectric conversion efficiency can exceed 10%, and the photoelectric conversion efficiency has good stability.

The invention discloses a zero-dimensional Cs3Cu2I5 perovskite scintillation crystal and application thereof. The zero-dimensional Cs3Cu2I5 perovskite scintillation crystal is prepared through the steps that firstly, N, N-dimethylformamide and dimethyl sulfoxide are mixed evenly to prepare a mixed solution, cesium iodide and cuprous iodide are added into the mixed solution, stirring is conducted to prepare a supersaturated precursor solution, and finally crystal growth is conducted through an inverse temperature crystallization method after the supersaturated precursor solution is filtered. When the Cs4PbI6 perovskite crystal is prepared, the inverse temperature crystallization method is adopted, operation is easy, controllability is high, repeatability is good, and large-scale industrialproduction can be achieved; meanwhile, the crystal prepared by the method is good in transparency, good in stability, high in quantum luminous efficiency and high in responsivity, and can be used fornuclear radiation detection.

The invention discloses a perovskite precursor solution for improving the stability of a perovskite solar cell, and the method comprises the steps of adding ioformamidine and cesium iodide into a solvent, adding bromomethylamine after stirring, adding lead iodide and 3, 4-dichloroaniline after stirring, and obtaining the perovskite precursor solution for improving the stability of the perovskite solar cell through stirring; spin coating the perovskite precursor solution for improving the stability of the perovskite solar cell on a substrate, and obtaining a perovskite thin film through thermalannealing as a light absorption layer of the solar cell. The perovskite precursor solution for improving the stability of the perovskite solar cell prepared by the invention replaces an existing perovskite layer, the defects in the existing perovskite mineralization technology are solved, and a perovskite stability improvement means that has low requirements for the process environment, is convenient in preparation method, can realize the long-time stable performance in a common environment and is used for the cell preparation process, is provided.

The invention discloses a red perovskite light-emitting diode based on mixed halogen and a preparation method thereof. The light-emitting diode sequentially comprises a transparent substrate, an anode, a hole injection layer, a hole transport layer 1, a hole transport layer 2, a perovskite light-emitting layer, an electron transport layer, an electron injection layer and a cathode, wherein the perovskite light-emitting layer is prepared by spin-coating a perovskite precursor solution; dropwise adding an anti-solvent in the spin coating process, wherein the perovskite precursor solution is prepared by dissolving cesium iodide CsI, cesium bromide CsBr, lead bromide PbBr2, lead iodide PbI2, organic ammonium bromide salt LBr and organic ammonium iodide salt LI in a polar solvent. By combininglarge-size organic cations with mixed halogens, the generation of a non-luminous active perovskite phase is inhibited, the movement of halogen ions is reduced, and the spectral stability is realized while the brightness and efficiency of the red perovskite LED are improved.

The invention relates to a dual-energy analysis grating. The dual-energy analysis grating mainly comprises high-energy grate bars and low-energy grate bars. The high-energy grate bars can be used for converting high-energy X rays into visible light and screening low-energy X rays, and the low-energy grate bars can be used for converting the low-energy X rays into the visible light and screening the high-energy X rays. The grating is made from caesium iodide (CsI) and bismuth (Bi). According to the dual-energy analysis grating, the defects of the traditional analysis gratings are overcome, and the dual-energy analysis grating is used for converting the X rays of different energies instead of stepping; by applying the dual-energy analysis grating to a dual-energy imaging system, steps of imaging are reduced, the requirements on mechanical accuracy are lowered, and the imaging system is simplified.

The invention discloses a high-fluorescence-efficiency inorganic lead-free perovskite material and a preparation method thereof, and belongs to the technical field of perovskite crystal material preparation. The high-fluorescence-efficiency inorganic lead-free perovskite material is Cu-doped Cs2AgI3 perovskite, and the doping amount of Cu is 0.09%. The preparation method comprises the following steps: mixing cesium iodide and silver iodide, carrying out ball milling, adding cuprous iodide, hydroiodic acid and microliter hypophosphorous acid, carrying out sealed heating to 150-200 DEG C, cooling to room temperature, annealing, and carrying out cooling treatment at -10 to -35 DEG C for 1-3 hours. The Cs2AgI3: Cu crystal with high purity and enhanced fluorescence efficiency is obtained, emitsbright blue fluorescence under the excitation of a 302 nm ultraviolet lamp, and has the advantages of no lead or chromium, high quantum efficiency, environmental stability and the like.

The invention discloses a simple and efficient method for synthesizing Cs2AgI3 perovskite, and belongs to the technical field of semiconductor nanomaterial preparation. First cesium iodide and silveriodide are mixed at a molar ratio of 1:1 and then1-dodecanethiol is added for grinding, during the grinding process, a 254 nm ultraviolet lamp is used for monitoring, the grinding is stopped when thebrightness of the product is no longer increased, the obtained product is subjected to heat treatment in a vacuum oven at 120-350 DEG C for 3 h, and the white product obtained after heat treatment issubjected to freezing treatment at -10 DEG C to -50 DEG C for 1-3 h to obtain the Cs2AgI3 non-lead all-inorganic perovskite with improved fluorescence yield. The method realizes preparation of the pure phase Cs2AgI3 by mechanical grinding for the first time. At the same time, the method has the advantages of convenient operation, simple method, easy realization of industrialized production, and the like.

The invention discloses a substrate for growing a caesium iodide scintillator. The substrate comprises a substrate body. The upper surface of the substrate body is provided with a smooth leveling layer; the lower surface of the substrate body is provided with an unevenly accidented diffuse reflection layer; and the substrate body is a transparent substrate body. Through such a mode, by using the substrate provided by the invention, the caesium iodide scintillator growing on the substrate can be sealed by use of a common waterproof metal film so that the waterproof sealing cost of the scintillator can be substantially saved, and the production efficiency of the scintillator is improved.

The invention discloses an optical refractive index change-based ultra-wideband neutron detector and belongs to the technical field of nuclear radiation detection. The optical refractive index change-based ultra-wideband neutron detector comprises a detection unit composed of a hydrocarbon material layer, a cesium iodide layer, a semiconductor and a substrate which are sequentially fixed, a high-voltage power supply and a neutron beam. A first metal film and a second metal film are respectively electroplated on the outer surface of the hydrocarbon material layer and the outer surface of the substrate. The first metal film is electrically connected with the negative electrode of the high-voltage power supply. After the neutron beam is incident on the detection unit, neutrons collide with protons in the hydrocarbon material layer to generate back-flushing protons. The back-flushing protons enter the cesium iodide layer to generate free electrons. Under the electric field action of a negative high voltage between the first metal film and the second metal film, generated free electrons in the cesium iodide layer are injected into the semiconductor, so that the optical refractive indexof the semiconductor is changed. The detector can convert the neutron beam into the refractive index change of the semiconductor material. Based on the optical interference, the refractive index change of the semiconductor material is measured, and then the intensity information of the neutron beam is obtained.

The invention discloses a high-stability all-inorganic CsPbI2Br perovskite thin film and a preparation method thereof. The preparation method comprises the following steps: processing an FTO conductive glass substrate material, and preparing a TiO2 layer on an FTO conductive glass substrate; preparing an anti-solvent, and adding cesium iodide, lead iodide and lead bromide into an organic solvent to prepare a perovskite precursor solution; coating an FTO/TiO2 substrate with the perovskite precursor solution to obtain a CsPbI2Br perovskite precursor thin film; coating the perovskite precursor thin film with an anti-solvent methylamine bromide solution; and annealing to form the all-inorganic CsPbI2Br perovskite thin film. According to the CsPbI2Br thin film prepared by the method, the crystallinity and the morphology of the thin film are improved, and the stability of the thin film is further improved.

The invention relates to a scintillation screen structure for an X-ray radiation detector. The scintillation screen structure comprises a silicon substrate. A cesium iodide hybrid film is deposited on the silicon substrate through the laser evaporation process. The cesium iodide hybrid film is a cesium iodide thick film doped with thallium and boron. A transparent water blocking film is deposited on the cesium iodide thick film. The visible light transmittance of the transparent water blocking film is larger than or equal to 90%. The water vapor transmittance of the transparent water blocking film is smaller than or equal to 0.01g/m<-2>.day<-1>. The scintillation screen structure for the X-ray radiation detector is compact, even in component and good in cohesiveness with the substrate, and has good water blocking and waterproof performance.

The invention discloses a charged particle detector of a white neuron source charged particle detecting spectrometer. The charged particle detector of the white neuron source charged particle detecting spectrometer comprises a delta E-E detector and an ionization chamber detector, wherein the delta E-E detector is a compound gas-solid detector and composed of a small multiwire proportional chambergas detector and a cerium iodide solid detector, which are mutually independent, and provided with a 0.5 mu m thick polyethylene film particle beam window; the ionization chamber detector is providedwith a 8 mu m thick polyimide film or polyester film particle beam window. According to the charged particle detector of the white neuron source charged particle detecting spectrometer, the delta E-Edetector is provided with the 0.5 mu m thick polyethylene film particle beam window, allowing charged particles to easily pass through and meanwhile avoiding being cracked under 5000 Pa pressure; theparticle beam window of the ionization chamber is made of 8 mu m thick polyimide film or PET (polyethylene), thereby allowing easy penetration of the charged particles and bearing 1 atm pressure.

The invention discloses a cesium-tin-iodine film and a preparation method and application thereof, and the preparation method of the Cs2SnI6 film comprises the following steps: (1) adding cesium iodide and tin iodide into DMSO or a mixed solvent of DMSO and DMF, stirring and dissolving at 20-70 DEG C to prepare a Cs2SnI6 precursor solution; (2) standing and aging the precursor solution prepared inthe step (1) in an N2 atmosphere for 3 days to 10 days, and spin-coating and depositing the precursor solution on a substrate to obtain a precursor film; (3) placing the precursor film obtained in the step (2) on a heating stage with the temperature of 30-70 DEG C, and standing for 1.0 min to 40 min; then putting the film on a spin coater, dripping 40 microliters to 100 microliters of supplementary solution, and spin-coating to be dry after dripping the solution; and (4) annealing the film obtained in the step (3) to obtain the Cs2SnI6 film.

The invention relates to a method for simply synthesizing CsAg2I3 pure phase inorganic non-lead perovskite, and belongs to the technical field of semiconductor nanomaterial preparation. First cesium iodide and silver iodide are mixed at a molar ratio of 1:2 and then 1-dodecanethiol is added for grinding, with the passing of ball-milling time, the mixture first gradually becomes dense from a fluffygray-white powder and adheres to the container wall, and finally is turned into a fluffy gray-white powder again, ball-milling is stopped, the product is directly put into a vacuum oven, and heat treatment is performed at 60-300 DEG C for 2 h; and then cooling treatment is performed at -15 DEG C to -40 DEG C for 1 h-2 h to obtain the CsAg2I3 perovskite with high purity and high fluorescence efficiency. The method has the advantages that the method is simple, the operation is easy, the time consumption is short, the energy consumption is small, the synthesized CsAg2I3 is a pure phase substance, and the like, and has important significance.

A ceramic gas discharge metal halide (CDM) lamp (23) with a high color temperature (higher than 4500K) having a prolate spherical PCA discharge vessel (12) containing an inert gas, mercury and A filling of a metal halide salt mixture of: at least about 62 mole percent calcium iodide (CaI2); up to about 8 mole percent cerium iodide (CeI3); up to about 15 mole percent % mole percent cesium iodide (CsI); and up to about 15 mole percent other halides selected from the group consisting of lithium (Li), sodium (Na), indium (In), manganese (Mn) , lead (Pb), praseodymium (Pr), europium (Eu), gallium (Ga) and thallium (Tl) halides, and the amount of sodium (Na) halide is less than about 5 mole percent, and thallium halide (Tl ) in an amount of less than about 5% by mole. This light is particularly suitable for horticultural applications, as well as sports lighting, aquarium lighting and other specialty lighting applications.

The invention relates to the technical field of artificial scintillation crystals, and concretely relates to a scintillation crystal, and a preparation method and application thereof. The chemical formula of the scintillation crystal is CsI:T1(x):Cu(y), wherein x is more than or equal to 0.05 and less than or equal to 0.1; and y is more than or equal to 0.01 and less than or equal to 0.1. The cesium iodide crystal prepared by adopting a co-doping formula and an improved descending method not only can keep the original light yield, but also can effectively reduce the afterglow, particularly, the afterglow in the first 50 ms time period after irradiation rays are turned off is remarkably improved, and the requirement of high-speed ray imaging detection can be met.

The invention discloses a method for high-pressure solid-phase synthesis of an iodine-copper-cesium lead-free quantum dot. The method comprises the following steps: uniformly mixing CsI and CuI according to a molar ratio of 3: 2, conducting tabletting, and carrying out treating at a high pressure not lower than 1 GPa to obtain an iodine-copper-cesium quantum dot nanomaterial. According to the invention, copper iodide and cesium iodide are used as precursors, high-pressure solid-phase synthesis is adopted, process is simple and controllable, inert atmosphere protection is not needed in the preparation process, and the obtained copper-cesium iodide quantum dot has high photoluminescence intensity.

The invention discloses a luminous pill of a metal halide rare-earth lamp, which contains sodium iodide, thallium iodide, indium iodide, dysprosium iodide, caesium iodide, iridium iodide and berkelium iodide. Compared with the prior art, the prepared metal halide rare-earth lamp is characterized by good luminous efficiency being more than 100Lm/w, and long service life lasting for 10000 hours.

The invention discloses a luminous pill of a metal halide rare-earth lamp, which contains sodium iodide, thallium iodide, indium iodide, dysprosium iodide, caesium iodide and iridium iodidee. Compared with the prior art, the prepared metal halide rare-earth lamp is characterized by good luminous efficiency being more than 100Lm/w.

The invention discloses a Cs4PbI6 perovskite crystal as well as a preparation method and application thereof. The perovskite crystal is an inorganic cation Cs<+> surrounded [PbI6]<4-> octahedron. Thepreparation method comprises the following steps of: uniformly mixing N, N-dimethylformamide and dimethyl sulfoxide, adding lead iodide and cesium iodide to prepare a supersaturated precursor solution, filtering the supersaturated precursor solution, heating to carry out crystal growth, and stopping growth until other impurities grow in the solution. The Cs4PbI6 perovskite crystal disclosed by theinvention is high in quality, regular in appearance, good in transparency, good in stability, high in quantum luminous efficiency and high in responsivity, and can be used for nuclear radiation detection; and meanwhile, an inverse temperature crystallization method is adopted during preparation, the operation is simple, the controllability is high, the repeatability is good, and large-scale industrial production can be realized.

The invention discloses a method for improving the stability of a perovskite solar cell, and the method comprises the steps of adding ioformamidine and cesium iodide into a solvent, adding bromomethylamine after stirring, adding lead iodide and 3, 4-dichloroaniline after stirring, and obtaining a perovskite precursor solution for improving the stability of the perovskite solar cell through stirring; and spin-coating the perovskite precursor solution for improving the stability of the perovskite solar cell on a substrate, and performing thermal annealing to obtain a light absorption layer of the solar cell. According to the invention, an existing perovskite layer is replaced, the prepared solar cell solves the defects existing in the existing perovskite mineralization technology, and a perovskite stability improvement means which is used in the cell preparation process, has low requirements for the process environment, is convenient in preparation method, and can maintain the long-termcharacter stability in a common environment is provided.