Cesium-tin-iodine film as well as preparation method and application thereof

A thin-film, solution-based technology, applied in the field of perovskite photodetectors, achieves the effects of smooth and dense surface, high absorption intensity, and high phase purity

Active Publication Date: 2020-12-08
HENAN UNIVERSITY
View PDF8 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, Cs 2 SnI 6 Thin films using similar processes have rarely been reported

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Cesium-tin-iodine film as well as preparation method and application thereof
  • Cesium-tin-iodine film as well as preparation method and application thereof
  • Cesium-tin-iodine film as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] A kind of solution method prepares cesium tin iodide (Cs 2 SnI 6 ) thin film method comprising the steps of:

[0028] (1) Weigh 117mg of cesium iodide and 282mg of tin iodide, add 0.5ml of mixed solvent of DMSO and DMF (the volume ratio of DMSO and DMF is 3:1), stir at 60°C and 1000 rpm Dissolved and made into 0.45mol / L Cs 2 SnI 6 The precursor solution;

[0029] (2) Place the solution prepared in step (1) under a nitrogen atmosphere for 7 days to age;

[0030] (3) Use a pipette gun to take 60 μL of the aged solution and drop it on a clean FTO glass substrate (1.6mm*1.8mm), and prepare Cs by spin coating 2SnI 6 Film, specifically, the rotation speed of the first stage is 1000 rpm, and the time is 10 seconds; the rotation speed of the second stage is 2500 rpm, and the time is 60 seconds; 200 µl isopropanol. Then place the substrate on a hot stage with a temperature of 50° C. and heat it for 20 minutes;

[0031] (4) After the substrate is naturally cooled to room...

Embodiment 2

[0036] A kind of solution method prepares cesium tin iodide (Cs 2 SnI 6 ) thin film method comprising the steps of:

[0037] (1) Weigh 468mg of cesium iodide and 564mg of tin iodide, add 1.0ml of DMSO and DMF mixed solution (the volume ratio of DMSO and DMF is 1:0), stir and dissolve at 60 degrees Celsius and 1000 rpm , dubbed 0.9mol / L Cs 2 SnI 6 The precursor solution;

[0038] (2) Place the solution prepared in step (1) at room temperature for 30 days;

[0039] (3) Use a pipette gun to take 60 μL of the aged solution and drop it on a clean FTO glass substrate (1.6mm*1.8mm), and prepare Cs by spin coating 2 SnI 6 Film, specifically, the rotation speed of the first stage is 1000 rev / min, and the time is 10 seconds; 200 µl isopropanol. Then place the substrate on a hot stage with a temperature of 30° C. and heat it for 40 minutes;

[0040] (4) After the substrate is naturally cooled to room temperature, 100 microliters of 10 mg / ml tin iodide isopropanol solution is dro...

Embodiment 3

[0043] A kind of solution method prepares cesium tin iodide (Cs 2 SnI 6 ) thin film method comprising the steps of:

[0044] (1) Weigh 117mg of cesium iodide and 564mg of tin iodide, add 1.0ml of DMSO and DMF mixed solution (the volume ratio of DMSO and DMF is 6:1), stir and dissolve at 60°C and 1000 rpm , dubbed 0.225mol / L of Cs 2 SnI 6 The precursor solution;

[0045] (2) Place the solution prepared in step (1) at room temperature for 4 days;

[0046] (3) Use a pipette gun to take 60 μL of the aged solution and drop it on a clean FTO glass substrate (1.6mm*1.8mm), and prepare Cs by spin coating 2 SnI 6 Film, specifically, the rotation speed of the first stage is 1000 rev / min, and the time is 10 seconds; 500 µl isopropanol. Then place the substrate on a hot stage with a temperature of 70° C. and heat it for 1 minute;

[0047] (4) After the substrate is naturally cooled to room temperature, 40 microliters of 1mg / ml tin iodide isopropanol solution is dropped on it, and...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a cesium-tin-iodine film and a preparation method and application thereof, and the preparation method of the Cs2SnI6 film comprises the following steps: (1) adding cesium iodide and tin iodide into DMSO or a mixed solvent of DMSO and DMF, stirring and dissolving at 20-70 DEG C to prepare a Cs2SnI6 precursor solution; (2) standing and aging the precursor solution prepared inthe step (1) in an N2 atmosphere for 3 days to 10 days, and spin-coating and depositing the precursor solution on a substrate to obtain a precursor film; (3) placing the precursor film obtained in the step (2) on a heating stage with the temperature of 30-70 DEG C, and standing for 1.0 min to 40 min; then putting the film on a spin coater, dripping 40 microliters to 100 microliters of supplementary solution, and spin-coating to be dry after dripping the solution; and (4) annealing the film obtained in the step (3) to obtain the Cs2SnI6 film.

Description

technical field [0001] The invention belongs to the field of perovskite photoelectric detectors, in particular to a cesium tin iodide thin film, its preparation method and application. Background technique [0002] Organic-inorganic hybrid lead halide perovskites (OIHPs) are a new type of optoelectronic materials that have emerged in recent years, among which organic-inorganic hybrid perovskite thin-film photodetectors (Photodetectors, PDs) benefit from lower preparation And material cost, simple preparation process, easy flexible integration and other characteristics, it has developed rapidly. Most of the currently studied PDs mainly use the toxic lead element, which is easy to pollute the environment. Tin element is often used instead of lead in non-lead perovskite thin film photodetectors, but the tin in the pure tin perovskite of photodetectors with better performance is +2, which is easily oxidized to +4 in the air. However, tin with high valence can easily lead to a ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/42H01L51/44H01L51/00
CPCH10K71/00H10K71/40H10K30/10H10K30/80H10K2102/00Y02E10/549
Inventor 黄军意谭付瑞梅延涛高跃岳董琛刘荣岳根田张伟风
Owner HENAN UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products