Thallium-doped caesium iodide scintillator and application thereof

A technology of thallium cesium iodide and cesium iodide, which is applied to thallium-doped cesium iodide scintillators and its application fields, can solve the problems of reduced light output and damage to the performance advantages of cesium iodide crystals, and achieve low afterglow and high scintillation efficiency effect

Inactive Publication Date: 2015-07-08
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Through the co-doping of the above ions, it is indeed found that the afterglow performance can be effectively suppressed, but the light yield is significantly reduced after doping, and this side effect greatly damages the performance advantages of cesium iodide crystals.

Method used

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  • Thallium-doped caesium iodide scintillator and application thereof
  • Thallium-doped caesium iodide scintillator and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Embodiment 1: preparation (Cs 0.9985 Tl 0.001 Yb 0.0005 )(I 1.0005 )film

[0032] 259.25g CsI, 0.33125g TlI and 0.2134g YbI 2 After fully mixing, put it into a molybdenum metal evaporation boat fixed on the electrode, heat the single crystal silicon substrate to 200 ° C by means of resistance heating, and the pressure in the hot steam chamber drops to 10 -2 torr, carry out ion bombardment for more than 10 minutes, rotate the substrate holder during evaporation, stop the evaporation when the film thickness reaches 100 μm, wait for the temperature to drop to 250°C and keep it warm for 25 minutes for annealing, and keep the original pressure for about 8 hours after dropping to room temperature Remove the substrate again.

[0033]The grown film sample is colorless and transparent, and is firmly bonded to the substrate. Tested by an X-ray pulse afterglow tester, it is shown that the afterglow of the sample is significantly lower than that of the film sample without co-...

Embodiment 2

[0034] Embodiment 2: preparation (Cs 0.998 Tl 0.001 Yb 0.001 )(I 1.002 )film

[0035] 259.3g CsI, 0.6265g TlI and 0.55375g YbI 3 After fully mixing, put it into a molybdenum metal evaporation boat fixed on the electrode, heat the silicon substrate to 200°C by means of resistance heating, and the pressure in the steam chamber is reduced to 10 -2 torr, carry out ion bombardment for more than 10 minutes, rotate the substrate holder during evaporation, stop the evaporation when the film thickness reaches 200 μm, keep the temperature for 20 minutes after the temperature drops to 200°C and anneal, and keep the original pressure for about 8 hours after cooling down to room temperature Remove the substrate again.

[0036] The grown film sample is colorless and transparent, and is firmly bonded to the substrate. Tested by an X-ray pulse afterglow tester, it is shown that the afterglow of the sample is significantly lower than that of the film sample without co-doped ytterbium ion...

Embodiment 3

[0040] Embodiment 3: preparation (Cs 0.998 Tl 0.001 Yb 0.001 )(I 0.999 Cl 0.002 ) single crystal fiber

[0041] 51.86g CsI, 0.06626g TlI and 0.04879gYbCl 2 After fully mixing, put it into a Ф15mm iridium crucible, fill the growth furnace with high-purity nitrogen, heat the raw material to a molten state, and keep the temperature for 5 hours after the raw material is completely melted. Coil, disconnect the power supply and take out the crystal after cooling down to room temperature.

[0042] After cutting, grinding and polishing, the crystal is processed into a crystal sample with a diameter of 3 mm and a length of 1 mm. The grown crystals are colorless and transparent without inclusions. Tested by an X-ray pulse afterglow tester, it is shown that the afterglow of the crystal sample is significantly lower than that of the sample without co-doped ytterbium ions (the sample obtained in Comparative Example 2). X-ray excitation emission spectroscopy test results show that t...

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Abstract

The invention discloses a thallium-doped caesium iodide scintillator and an application thereof; the thallium-doped caesium iodide scintillator is thallium-ytterbium co-doped cesium iodide and has the following composition general formula: (Cs1-x-yTlxYby)(I1-yM2y) or (Cs1-x-yTlxYby)(I1-yM3y), wherein M is I, Br, Cl or F, 0<x<=0.05, and 0<y<=0.05. A thallium-doped caesium iodide thin film and a single-crystal fiber prepared by the thallium-doped caesium iodide scintillator have excellent properties of high scintillation efficiency and low afterglow, and can be widely applied in the field of X-ray radiation imaging.

Description

technical field [0001] The invention relates to a thallium-doped cesium iodide scintillator and its application, belonging to the technical field of scintillation materials. Background technique [0002] Thallium-doped cesium iodide (CsI:Tl) scintillator is a kind of non-deliquescent halide with excellent performance. Its light output is 85% of that of NaI:Tl. The suitable emission wavelength (550nm) can effectively combine with silicon photodiode Coupling, thus simplifying the detector readout system, coupled with its low price and other advantages, make this material widely used in nuclear medicine imaging and security inspection and other fields. [0003] Compared with thallium-doped cesium iodide bulk materials, thin-film materials do not require additional costs and performance instability caused by post-processing processes such as cutting, polishing, and adding reflective layers, so they can be directly used for device integration and have natural The advantages. Be...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/12C30B29/62C30B11/00C09K11/85C23C14/24
CPCC30B29/12C09K11/7705C23C14/24C30B11/00C30B29/62
Inventor 吴云涛任国浩陈晓峰李焕英潘尚可
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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