Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Indium and thallium co-doped cesium iodide scintillator and application thereof

A cesium iodide scintillator, cesium iodide technology, applied in chemical instruments and methods, vacuum evaporation plating, coating and other directions, to achieve the effects of high stability, improved stability and high scintillation efficiency

Active Publication Date: 2019-05-03
XUZHOU NADIA ELECTRONICS TECH
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But so far, element doping that can significantly improve the stability of CsI scintillation materials has not been reported

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Indium and thallium co-doped cesium iodide scintillator and application thereof
  • Indium and thallium co-doped cesium iodide scintillator and application thereof
  • Indium and thallium co-doped cesium iodide scintillator and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Embodiment 1: preparation (Cs 0.9985 Tl 0.001 In 0.0005 ) I 1.001 film

[0023] 259.42CsI, 0.331g TlI and 0.248g InI 3 After fully mixing, put it into a molybdenum metal evaporation boat fixed on the electrode, heat the single crystal silicon wafer to 180°C by means of resistance heating, and adjust the pressure in the steam chamber to 10 -3 torr, with Evaporate at a certain evaporation rate. During evaporation, the substrate frame rotates to ensure the uniformity of the film. When the thickness of the film reaches 80 μm, stop the evaporation. After the temperature drops to 150°C, keep it warm for 30 minutes for annealing, cool naturally to room temperature, and grow the obtained film. The sample is colorless and transparent, and is firmly combined with the monocrystalline silicon wafer, which can also be replaced by an aluminum wafer or a ceramic wafer.

[0024] The film samples prepared in Comparative Example and Example 1 were respectively subjected to X-ray e...

Embodiment 2

[0027] Embodiment 2: preparation (Cs 0.998 Tl 0.001 In 0.001 ) I 1.002 film

[0028] 259.30g CsI, 0.331g TlI and 0.496g InI 3 After mixing well and evenly, put it into a molybdenum metal evaporation boat fixed on the electrode, heat the glass sheet to 250°C by means of resistance heating, and adjust the pressure in the steam chamber to 10 - 5 torr, with Evaporate at a certain evaporation rate. During evaporation, the substrate holder rotates to ensure the uniformity of the film. When the thickness of the film reaches 600 μm, stop the evaporation. After the temperature drops to 350°C, keep it warm for 90 minutes and anneal, cool naturally to room temperature, and grow the obtained film. The sample is colorless and transparent, and is firmly combined with the glass sheet, which can also be replaced by an aluminum sheet or a ceramic sheet.

[0029] The detection results of this example are similar to those of Example 1. The analysis of the detection results shows that bot...

Embodiment 3

[0030] Embodiment 3: preparation (Cs 0.9975 Tl 0.001 In 0.0015 )(I 1.003 )film

[0031] 259.16g CsI, 0.331g TlI and 0.743g InI 3 After fully mixing, put it into a molybdenum metal evaporation boat fixed on the electrode, heat the quartz plate to 150°C by means of resistance heating, and the pressure in the hot steam chamber drops to 10 -4 torr, with Evaporate at a certain evaporation rate. During evaporation, the substrate holder rotates to ensure the uniformity of the film. When the thickness of the film reaches 30 μm, stop the evaporation. After the temperature drops to 100°C, keep it warm for 40 minutes for annealing, cool naturally to room temperature, and grow the obtained film. The sample is colorless and transparent, and is firmly combined with the quartz sheet, which can also be replaced by an aluminum sheet or a ceramic sheet.

[0032] The detection results of this example are similar to those of Example 1. The analysis of the detection results shows that both ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an indium and thallium co-doped cesium iodide scintillator and an application thereof. The chemical composition general formula of the scintillator is (Cs1-x-yTlxIny)I1+2y, x is more than 0 and not more than 0.05, and y is more than 0 and not more than 0.05. The indium and thallium co-doped cesium iodide scintillator can be applied to the preparation of an indium and thallium co-doped cesium iodide film, and the film is prepared through a thermal evaporation process. The indium and thallium co-doped cesium iodide film prepared by using the indium and thallium co-doped cesium iodide scintillator has a high scintillation efficiency and a high stability, and has great values in the promotion of the wide application of CsI scintillation materials in the high-resolutionX imaging field due to the improvement of the stability.

Description

technical field [0001] The invention belongs to the technical field of scintillator materials, in particular to a cesium iodide scintillator co-doped with indium and thallium and its application. Background technique [0002] Cesium iodide (CsI) scintillator materials mainly include intrinsic CsI scintillator materials produced by pure CsI and extrinsic CsI scintillator materials produced by doping. Intrinsic CsI-based scintillators have the characteristics of high uniformity, high light output, and small afterglow, but the fluorescence time of pure CsI crystals is too short, and the charge-coupled device image sensor (CCD) cannot directly receive its signal. Thallium-doped cesium iodide (CsI: Tl) crystals in extrinsic scintillators have a large density, and the converted visible light can match CCD. At the same time, CsI: Tl crystals have high light yield and excellent radiation resistance. It is a scintillation crystal with excellent comprehensive performance. [0003] H...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C09K11/62C23C14/06C23C14/24
Inventor 贡浩飞朱磊
Owner XUZHOU NADIA ELECTRONICS TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com