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High-stability all-inorganic CsPbI2Br perovskite thin film and preparation method thereof

A high-stability, perovskite technology, applied in coatings, photovoltaic power generation, electrical components, etc., can solve problems such as poor stability

Pending Publication Date: 2020-10-20
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] For the above calcium CsPbI 2 Due to the poor stability of the Br titanium film in an environment with high humidity, the present invention proposes to form a stable CsPbI by generating halogen exchange on the surface of the perovskite precursor film. 2-x Br 1+x (02 Br, which improves the crystallinity and morphology of the film and reduces the stress defects on the surface, thereby enhancing the CsPbI 2 Phase stability of Br perovskite thin films

Method used

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  • High-stability all-inorganic CsPbI2Br perovskite thin film and preparation method thereof
  • High-stability all-inorganic CsPbI2Br perovskite thin film and preparation method thereof
  • High-stability all-inorganic CsPbI2Br perovskite thin film and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0038] 1) Clean the FTO conductive glass substrate (2×2.5cm 2 ), then use N 2 Dry and treat with ultraviolet ozone for 15 minutes;

[0039] 2) TiO 2 The sol was coated on the FTO conductive glass substrate and rotated at a speed of 3000rpm for 30s, and then annealed in air at 500°C for 60min; after natural cooling to room temperature, a dense TiO 2 layer (~60nm);

[0040] 3) methylamine bromide is dissolved in organic solvent A methanol and isopropanol, and the molar concentration is made into a 0.1mol / L solution as an antisolvent;

[0041] 4) According to the molar ratio of 1:1:2 with 277mg PbI 2 , 222mg PbBr 2 and 312mg CsI were completely dissolved in DMSO, stirred at room temperature for 12h, and prepared as CsPbI with a molar concentration of 1.2mol / L 2 Br precursor solution;

[0042] 5) Then apply the precursor solution to the FTO / TiO 2 On the substrate, the deposited CsPbI 2 Before the Br perovskite film, use ultraviolet ozone treatment for 10min; rotate at a s...

Embodiment 2

[0046] 1) Clean the FTO conductive glass substrate (2×2.5cm 2 ), then use N 2 Dry and treat with ultraviolet ozone for 15 minutes;

[0047] 2) TiO 2 The sol was coated on the FTO conductive glass substrate and rotated at a speed of 3000rpm for 30s, and then annealed in air at 500°C for 60min; after natural cooling to room temperature, a dense TiO 2 layer (~60nm);

[0048] 3) methylamine bromide is dissolved in organic solvent A toluene, and the molar concentration is made into a solution of 0.05mol / L as anti-solvent;

[0049] 4) According to the molar ratio of 1:1:2, 277mg PbI 2 , 222mg PbBr 2 and 312mg CsI were completely dissolved in DMF, stirred at room temperature for 12h, and prepared into CsPbI with a molar concentration of 1.25mol / L 2 Br precursor solution;

[0050] 5) Then apply the precursor solution to the FTO / TiO 2 On the substrate, the deposited CsPbI 2 Before the Br perovskite film, use ultraviolet ozone treatment for 15min; rotate at a speed of 1800rpm f...

Embodiment 3

[0054] 1) Clean the FTO conductive glass substrate (2×2.5cm 2 ), then use N 2 Dry and treat with UV-ozone for 15min.

[0055] 2) TiO 2 The sol was coated on the FTO conductive glass substrate and rotated at 3000rpm for 30s, and then annealed in air at 500°C for 60min. After natural cooling to room temperature, dense TiO 2 layer (~60nm);

[0056] 3) methylamine bromide is dissolved in organic solvent A chlorobenzene, is made into molar concentration and is 0.2mol / L solution as anti-solvent;

[0057] 4) According to the molar ratio of 1:1:2, 277mg PbI 2 , 222mg PbBr 2 and 312mg CsI were completely dissolved in DMSO, stirred at room temperature for 12h, and prepared as CsPbI with a molar concentration of 0.6mol / L 2 Br precursor solution;

[0058] 5) Then apply the precursor solution to the FTO / TiO 2 On the substrate, the deposited CsPbI 2 Before the Br perovskite film, use ultraviolet ozone treatment for 5min; rotate at a speed of 2000rpm for 20s, and then rotate at a s...

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Abstract

The invention discloses a high-stability all-inorganic CsPbI2Br perovskite thin film and a preparation method thereof. The preparation method comprises the following steps: processing an FTO conductive glass substrate material, and preparing a TiO2 layer on an FTO conductive glass substrate; preparing an anti-solvent, and adding cesium iodide, lead iodide and lead bromide into an organic solvent to prepare a perovskite precursor solution; coating an FTO / TiO2 substrate with the perovskite precursor solution to obtain a CsPbI2Br perovskite precursor thin film; coating the perovskite precursor thin film with an anti-solvent methylamine bromide solution; and annealing to form the all-inorganic CsPbI2Br perovskite thin film. According to the CsPbI2Br thin film prepared by the method, the crystallinity and the morphology of the thin film are improved, and the stability of the thin film is further improved.

Description

technical field [0001] The invention belongs to the field of perovskite photovoltaic devices, in particular to a highly stable all-inorganic CsPbI 2 Preparation method of Br perovskite thin film. Background technique [0002] Perovskite solar cells (PSCs) have achieved a series of breakthroughs in efficiency ranging from 3.8% to 25.2% in the past decade, attributing to their excellent optoelectronic performance, high absorption coefficient, ideal direct bandgap and tunable bandgap . Organic-inorganic hybrid perovskite materials are inherently unstable due to easily volatile organic components, and organic molecules may be volatilized in hot and humid environments, such as CH 3 NH 3 PB 3 May decompose into lead iodide (PbI 2 ) and CH 3 NH 3 I. Therefore, all-inorganic perovskites with ultrahigh stability due to the substitution of organic cations by cesium (Cs) are considered as promising alternatives for commercialization of PSCs. [0003] All inorganic CsPbX 3 (X ...

Claims

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Application Information

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IPC IPC(8): C03C17/34H01L31/032H01L31/06
CPCC03C17/3447C03C2218/116H01L31/032H01L31/06Y02E10/50
Inventor 柴文明朱卫东张春福陈大正张进成郝跃
Owner XIDIAN UNIV
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