Method for preparing thallium-doped caesium iodide (CsI:T1) film

The technology of thallium cesium iodide and thin film is applied in the field of preparation of thallium-doped cesium iodide thin film, which can solve the problems of large volume, difficult integration, and not portability.

Inactive Publication Date: 2011-02-09
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF4 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At this stage, the scintillator materials used in the detection of X-rays in my country, whether it is CsI:Tl or NaI:Tl, are still in the stage of bulk materials. In the Chinese patent 94112210.7 "drop method to grow large-sized cesium iodide (CsI ) crystal technology", Chinese patent 97112901.0 "Cesium iodide-based scintillation material and its preparation method", Chinese patent 200310109480.7 "Thallium-doped cesium iodide crystal growth technology using simple powder as deoxidizer" and Chinese patent 96116387.9 "Non-vacuum "Technology for growing thallium-doped cesium iodide crystals by descent method" are all new technologies and new processes for preparing cesium iodide crystals. The preparation technology of cesium iodide crystals is very mature, but there is no preparation of thallium-doped cesium iodide in China. Report on (CsI:Tl) Thin Films
Due to the application of thallium-doped cesium iodide crystal as a bulk material, there are defects in the application, namely: large volume, not light, not easy to integrate, and additional connection equipment (such as optical fiber) is required to connect with the detector, etc.
Therefore, the CsI:Tl crystal used in X-ray detection and other applications has a large volume and needs to be improved in various aspects, especially in terms of integration.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing thallium-doped caesium iodide (CsI:T1) film
  • Method for preparing thallium-doped caesium iodide (CsI:T1) film
  • Method for preparing thallium-doped caesium iodide (CsI:T1) film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0010] specific implementation plan

[0011] (1) Selection of raw materials

[0012] The raw materials used in the present invention are CsI and TlI crystals with a purity of 99.99%. Before coating, the two crystals are mixed together, and the molar ratio of the two in the mixed crystal is roughly 1000 / (0.5~5.0)

[0013] (2) Selection of substrate

[0014] P-type single crystal Si, n-type single crystal Si, glass material and P-type single crystal silicon coated with silicon dioxide film are selected as substrates.

[0015] (3) Production of evaporation boat

[0016] Metal molybdenum is selected as the material to make a boat-shaped container, which is fixed on the evaporation electrode.

[0017] (4) thermal evaporation

[0018] The thermal evaporation system uses tungsten as a helical resistance heating source to perform resistance heating on the substrate. The substrate to be coated is placed on the shelf, and a molybdenum boat is used as the evaporation source. The mol...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a preparation technology of a functional film material and provides a method for preparing a thallium-doped caesium iodide (CsI:T1) film. According to the method, the high-performance 50-100 micrometer thallium-doped caesium iodide (CsI:T1) film which is attached to the substrate very well and compatible with a CMOS (Complementary Metal-Oxide-Semiconductor transistor) process can be prepared on a substrate uniformly and compactly by adopting a thermal evaporation mode, and the thallium-doped caesium iodide (CsI:T1) film can be widely applied to X-ray detectors.

Description

technical field [0001] The invention relates to a preparation technology of a functional thin film material, and provides a preparation method of a thallium-doped cesium iodide (CsI:Tl) thin film. Background technique [0002] Since X-ray was discovered by Roentgen, it has shown more and more uses in front of human beings, from the initial X-ray photosensitive negative film to the later X-ray photodetection device, from aerospace to high-energy physics, from military to medical treatment and so on. From production to life to scientific research and space exploration, this terrifying ray shows its unique charm. Among them, the detection technology used by X-ray is the most important development direction among them. [0003] CsI:Tl is a scintillator material with excellent performance. It not only has high light output but also has good radiation intensity. It is easy to match the spectrum with silicon photocells. It has excellent mechanical properties and relatively low pro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/12C30B23/02
Inventor 刘爽张佳宁钟智勇
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products