Core-shell quantum dot and preparation method thereof as well as electroluminescent device comprising core-shell quantum dot

An electroluminescent device, core-shell quantum dot technology, applied in the field of quantum dot materials, can solve the problems of poor luminous performance of blue QLED, and achieve the effect of solving poor luminous performance, improving stability, and easy hole injection

Active Publication Date: 2018-07-06
NANJING TECH CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The main purpose of the present invention is to provide a core-shell quantum dot and its preparation method, and an electroluminescent device containing it, to solve the problem of poor luminous performance of the existing blue QLED

Method used

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  • Core-shell quantum dot and preparation method thereof as well as electroluminescent device comprising core-shell quantum dot
  • Core-shell quantum dot and preparation method thereof as well as electroluminescent device comprising core-shell quantum dot

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preparation example Construction

[0043] There are many methods for preparing core-shell quantum dots in the above-mentioned embodiments. In order to facilitate the implementation of those skilled in the art, according to another aspect of the present application, an optional method for preparing core-shell quantum dots is also provided. , for preparing the above-mentioned core-shell quantum dots, the preparation method includes the following steps:

[0044] Step S1, the cadmium precursor, the S element, the Se element, and the ligand are heated and reacted in the first solvent to prepare a CdSe-containing X S (1-X) The first system of the nucleus, the purification of the first system to obtain CdSe X S (1-X) nuclei, the CdSe X S (1-X) Nuclei are dispersed in a second solvent to obtain CdSe X S (1-X) nuclear solution;

[0045] In this step S1, the ratio of the total moles of Cd to the total moles of S and Se in the cadmium precursor is preferably but not limited to 10:1˜1:1.

[0046] In this step S1, t...

Embodiment 1

[0064] to prepare CdSe X S (1-X) / ZnSe / ZnS core-shell quantum dots as an example:

[0065] S1: Preparation of CdSe X S (1-X) Core (3.2nm in diameter, the ratio of the amount of Se to S is 1:40):

[0066] S101: Mix 4mmol cadmium oxide with 10mmol stearic acid and 10ml octadecene solution, heat to dissolve under an inert gas atmosphere, and cool to room temperature;

[0067] S102: Weigh 0.0243mmol of Se powder and 0.957mmol of sulfur powder, add them into the solution in step S101 through a funnel, stir rapidly and raise the temperature to 280°C under an inert gas atmosphere, and react for 5min to obtain CdSe X S (1-X) Nucleus quantum dot solution;

[0068] S103: CdSe X S (1-X) Nuclei were precipitated with a mixture of methanol and acetone, centrifuged, and CdSe X S (1-X) The nuclear solid powder was redispersed in octadecene.

[0069] S2, making the first shell layer of ZnSe (thickness 2.8nm):

[0070] S201: 1mmol of Se powder was dissolved in 1ml of trioctylphosph...

Embodiment 2~4

[0090]The difference from Example 1 is that the molar ratio of Se and S in the core, the diameter of the core, the material of the first shell, the thickness of the first shell, the material of the second shell, and the thickness of the second shell are different, as shown in Table 1 below. .

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Abstract

The invention provides a core-shell quantum dot and a preparation method thereof as well as an electroluminescent device comprising the core-shell quantum dot. A core of the core-shell quantum dot isCdSeXS(1-X) and a shell layer of the quantum dot comprises a first shell layer and a second shell layer; the first shell layer is selected from one or more of ZnSe, ZnSeYS(1-Y) and Cd(Z)Zn(1-Z)S; thesecond shell layer which covers the first shell is Cd(Z)Zn(1-Z)S or ZnS; the maximum emission peak value of the core-shell quantum dot is less than or equal to 480nm, and X, Y and Z are all greater than 0 and less than 1. The bandwidth of a CdSeXS(1-X) core is relatively small and a HOMO energy level is relatively shallow, so that the core-shell quantum dot is easily injected into a hole; the material energy band of the first shell layer is located between the core and the second shell layer, so that the defects of the core are reduced and the photoluminescence efficiency of the quantum dot isimproved; the carrier injection potential barrier is reduced, and the efficiency and service life of an external quantum are improved; the quantum dot is passivated by the second shell layer, that the stability of a whole body is improved.

Description

technical field [0001] The invention relates to the field of quantum dot materials, in particular to a core-shell quantum dot, a preparation method thereof, and an electroluminescent device containing the quantum dot. Background technique [0002] In recent years, due to the characteristics of high luminous efficiency, wide excitation range, narrow emission spectrum, and adjustable color wavelength, quantum dot materials have attracted more and more attention in the application of biotechnology, solar cells, and light-emitting diodes. At present, quantum dot TVs using the principle of photoluminescence of quantum dots, such as TCL quantum dot TVs, have successfully entered the consumer market. The NTSC color gamut is >110%, and the color performance is comparable to organic light-emitting diode (Organic Light-Emitting Diode, OLED) TVs. , get good market feedback. [0003] As the second-generation light-emitting technology of quantum dot materials, quantum dot light-emitt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88C09K11/02B82Y20/00B82Y40/00H01L51/50H01L51/54
CPCC09K11/02C09K11/883B82Y20/00B82Y40/00H10K50/115H10K50/00C09K11/025B82Y30/00C01G11/02C01P2004/54C01B19/002C01G9/006C01G9/08C01G11/006C01P2004/64C01P2006/60C01P2004/80C01P2004/82
Inventor 胡保忠李光旭毛雁宏高远苏叶华
Owner NANJING TECH CORP LTD
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