NiO-doped light-emitting diode and preparation method therefor

A light-emitting diode, 2·6H2O technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of nickel oxide work function not reduced, unable to react and prepare, etc., to achieve the effect of improving the ability of hole transport

Inactive Publication Date: 2016-12-21
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a doped NiO, a light-emitting diode and a preparation method thereof,

Method used

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  • NiO-doped light-emitting diode and preparation method therefor
  • NiO-doped light-emitting diode and preparation method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] 0.8mmol of Ni(NO 3 ) 2 •6H 2 O and 0.015mmol of Cu(NO 3 ) 2 2.5H 2 O (or Zn (NO 3 ) 2 •6H 2 O or Zn(NO 3 )2 ) and 0.05mmolLiNO 3 Dissolve in 10mL deionized water, add 0.1mol glycine, then add 8uL NH 3 •H 2 O solution. Then the configured solution is deposited on the substrate containing the bottom electrode and heated at 170 °C to generate Li x Cu y NiO film (or Li x Zn y NiO film), wherein the values ​​of x and y can be adjusted according to different hole transport layers or different preparation conditions.

Embodiment 2

[0039] 0.8mmol of Ni(NO 3 ) 2 •6H 2 O and 0.015mmol of Cu(NO 3 ) 2 2.5H 2 O (or Zn (NO 3 ) 2 •6H 2 O or Zn(NO 3 ) 2 ) and 0.05mmolLiNO 3 Dissolve in 10mL deionized water, add 0.05mol glycine and 5ul acetylacetone, then add 8uL NH 3 •H 2 O solution. Then the configured solution is deposited on the substrate containing the bottom electrode and heated at 170 °C to generate Li x Cu y NiO film (or Li x Zn y NiO film), wherein the values ​​of x and y can be adjusted according to different hole transport layers or different preparation conditions.

Embodiment 3

[0041] 0.8mmol of Ni(NO 3 ) 2 •6H 2 O and 0.015mmol of Mg (NO 3 ) 2 and 0.05mmolLiNO 3 Dissolve in 10mL of 2-methoxyethanol solution, add 10uL of acetylacetone solution, add 7uL of NH 3 •H 2 O solution. Then the configured solution is deposited on the substrate containing the bottom electrode and heated at 190 °C to generate Li x Mg y A NiO thin film, wherein the values ​​of x and y can be adjusted according to different hole transport layers or different preparation conditions.

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Abstract

The invention discloses an NiO-doped light-emitting diode and a preparation method therefor, and the method comprises the steps: enabling nickel salt, first doped salt and second doped salt to be mixed in deionized water or 2-methoxyethanol, adding glycine or acetylacetone, carrying out heating, and preparing LixMyNiO, wherein the first doped salt is lithium salt, and the second doped salt is magnesium salt, copper salt or zinc salt. In LixMyNiO, M is Mg, Cu or Zn, x is greater than zero but less than one, y is greater than zero but less than one. According to the invention, an LixMyNiO film is low in preparation temperature, and can be prepared under the temperature 150-200 DEG C. Moreover, a little of ammonia water is added in the preparation process of the LixMyNiO film, thereby guaranteeing the stability of precursor solution. The method improves the stability of hole transmission under the condition of guaranteeing that the work function of nickel oxide is not reduced, and reduces the hole injection barrier. The method enables the light-emitting diode to be higher in efficiency.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a doped NiO, a light-emitting diode and a preparation method thereof. Background technique [0002] At present, in QLED devices, the three primary colors of red, green and blue have achieved relatively high efficiency, but the lifespan is still a major factor limiting the commercialization of QLEDs. In order to improve the stability and life of the device, there have been literatures using transition metal oxides to replace the organic layers, mainly replacing PEDOT:PSS (poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid). At present, the common metal oxides mainly include V 2 o 5 , WO 3 , NiO and MoO 3 . As a P-type semiconductor, NiO has a high transmittance and high work function (5.2-5.4eV), making it an alternative to PEDOT:PSS. [0003] In order to further improve the performance of NiO, Alex K.-Y. Jen published an article on "Advance Material", b...

Claims

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Application Information

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IPC IPC(8): H01L51/56H01L51/50H01L51/54
CPCH10K50/115H10K50/17H10K2102/00H10K71/00
Inventor 王宇曹蔚然杨一行钱磊
Owner TCL CORPORATION
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