Techniques for plasma processing a substrate

Abstract

Techniques for plasma processing a substrate are disclosed, In one particular exemplary embodiment, the tech Pique may be realized, with a method comprising introducing a feed gas proximate to a plasma source, whore the feed gas may comprise a first and second species, where the first and second species have different ionization energies; providing a multi-level RF power waveform to the plasma source, where the multi-level RF power waveform has at least a first power level during and a second power level during a second pulse duration where the second power level may be different from the first power level; ionizing the first species of the feed gas during the first pulse duration; ionizing the second species during the second pulse duration; and providing: a bias to the; substrate during the first poise duration.

Description

technical field [0001] This application relates to techniques for processing substrates, and more particularly, to techniques for processing substrates using plasmas. Background technique [0002] Plasma processing has been widely used in semiconductor and other industries for decades. Plasma processing is used for tasks such as cleaning, etching, grinding and deposition. More recently, plasma treatment has been used for doping. Plasma assisted doping (PLAD) or sometimes called plasma immersion ion implantation (PIII) has been used to meet the doping requirements of some modern electronic and optical devices. Plasma doping differs from the conventional beam-line ion implantation system, which uses an electric field to accelerate ions and then charges them according to their mass-to-charge ratio (mass-to-charge ratio). ratio) to filter the ions to select desired ions for implantation. Unlike conventional beam ion implantation systems, PLAD systems immerse the substrate in...

AI Technical Summary

Problems solved by technology

This charge build-up can lead to the development of relatively high potential voltages across the substrate, which can cause unacceptable doping non-uniformities and arcing, which in turn can lead to device damage

Additionally, the composition of the plasma may affect the resulting process steps

For example, a large number of noble gas ions can cause more damage to the substrate than expected

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