40 results about "Negative glow" patented technology

PECVD apparatus for depositing material onto a moving substrate is provided comprising a process chamber, a precursor gas inlet to the process chamber, a pumped outlet, and a plasma source disposed within the process chamber. The plasma source produces one or more negative glow regions and one or more positive columns. At least one positive column is disposed toward the substrate. The plasma source and precursor gas inlet are disposed relative to each other and the substrate such that the precursor gas is injected into the positive column adjacent the substrate. Apparatus is provided to channel the precursor gas into the positive column away from the negative glow region.

The invention discloses a method for generating a highly active selenium source used for selenizing treatment, and a device and application thereof. The method comprises the steps of heating and vaporizing solid selenium to generate selenium gas; adding hydrogen or a mixture of hydrogen and argon to the selenium gas generated by the last step; and subjecting the mixture of gases in the last step to glow discharge decomposition and synthesis to obtain hydrogen selenide and highly active selenium gas. The device for generating the selenium source comprises an airtight reaction tank, a solid selenium source in the reaction tank, a positive and a negative glow discharge electrodes, a hydrogen selenide reaction cavity, as well as a heating device and an excitation power supply outside the reaction tank. A gas inlet is further arranged on the lateral wall of the reaction tank; a gas outlet is arranged on the top of the reaction tank. The method not only retains the advantages of the solid selenium, namely low cost, non-toxicity and easiness to transport and store, prepares the hydrogen selenide and the highly active selenium ambience with the characteristics of the hydrogen selenide and the highly active selenium, but also saves a large amount of selenide materials, reduces the cost and has important practical value.

The present invention has an object to provide a cold-cathode discharge lamp which can suppress sputtering on a lead-in wire and reduce consumption of mercury so as to achieve a longer lifetime without increasing an amount of applied mercury. The cold-cathode discharge lamp of the present invention is characterized in that a lead-in wire connected to a cylindrical electrode in a lighting tube is made of a material same as a material that forms the cylindrical electrode. It is possible to suppress concentration negative glow discharge shifted to the lead-in wire and to allow the electrode to be covered with even negative glow discharge. Thus, it is possible to reduce mercury consumed by excessive sputtering on the outer surface of the internal lead-in wire and to achieve a longer lifetime of the cold-cathode discharge lamp.

The embodiment of the invention discloses a prime lens. The prime lens includes a first lens with negative light focal power, a second lens with negative light focal power, a third lens with positivelight focal power, a diaphragm, a fourth lens with negative light focal power, a fifth lens with positive light focal power, a sixth lens with positive light focal power, a seventh lens with negativelight focal power, and an eighth lens with positive light focal power, which are arranged successively along an optical axis from an object side to an image side, wherein the fourth lens and the fifthlens form an adhesive lens; the first lens, the fourth lens, the fifth lens, and the sixth lens are spherical lens; and the second lens, the third lens, the seventh lens, and the eighth lens are non-spherical lens. The technical scheme of the embodiment of the invention can be applicable to the field of security and defense. The lens has the characteristics of day and night confocal function, excessive large amount of light and an ultra-wide angle, especially suitable for use under a low illumination condition.

The invention discloses a device and a method for preparing a graphene film on basis of plasma. According to the device, a sample support frame is horizontally arranged in the middle of a quartz tube, a negative electrode is arranged at the upper part of the quartz tube, a positive electrode is arranged at the lower part of the quartz tube, sealing rubber plugs are arranged at the upper and lower ends of the quartz tube, a negative glow zone is arranged between the negative electrode and the sample support frame, a Faraday dark space is arranged between the positive electrode and the sample support frame, a gas regulating valve is connected with the upper part of the quartz tube through a mass flowmeter and the sealing rubber plug at the upper end, a high-voltage negative power supply is connected with a negative electrode through the sealing rubber plug at the upper end, a vacuum pump is connected with the lower part of the quartz tube through a vacuum regulating valve, a vacuometer and the sealing rubber plug at the lower end, and the positive electrode is grounded through the sealing rubber plug at the lower end. The graphene film prepared in the invention is high in degree of graphitization and has excellent properties; in addition, compared with the traditional chemical reduction method and thermal reduction method, the preparation method disclosed by the invention has the advantages of short time consumption, high reduction efficiency, no need of a reducing agent or heating source and the like and has a potential for large-scale industrial application.

The invention relates to the field of material science, in particular to a preparation method of a body-centered cubic Ta coating. With adoption of a negative glow region magnetron sputtering method,a substrate part is placed in a negative glow region between an anode and a cathode, heating temperature of the substrate is 200-400 DEG C, a direct-current power supply or a pulsed power supply is used, pure Ta is taken as a target, Ar is taken as working gas, and sputtering power density is 3-15 W/cm<2>. With adoption of the method, the body-centered cubic lattice alpha-Ta coating can be deposited, and binding force and thermal shock resistance are remarkably better than those of an excellent conventional magnetron sputtered Ta coating. The Ta coating prepared with the method binds well withthe substrate when the thickness of the Ta coating reaches about 100 mu m, while the Ta coating prepared with the conventional magnetron sputtering method peels off when the thickness reaches 15 mu m. The thermal shock resistance of the Ta coating prepared with the method and having thickness of 100 mu m is 7 times higher than that of the Ta coating prepared with the conventional magnetron sputtering method and having thickness of 10 mu m.

The invention discloses a method and equipment for rapidly preparing a diamond-like carbon film. The plasma is bounded in a specific area by employing a radio frequency hollow cathode effect and is merged in a negative glow area, so that the gas ionization rate is doubled; meanwhile, the electrons are bounded between electrodes in the radio frequency glow discharge process and move back and forth in the discharge space, and the frequency of colliding with gas molecule is increased, so that the ionization capacity is obviously improved; and therefore, the density and energy of plasma are improved, the deposition rate and quality of the film are improved, the production efficiency is obviously improved, the product cost is reduced, and industrial production is easily realized.

The invention discloses a magnetron sputtering device for an inner cavity of a pipe with a large length-diameter ratio and a method for preparing an alpha-Ta coating, and belongs to the technical field of a magnetron sputtering coating. The device uses a large length-diameter ratio cavity of the pipe as a vacuum cavity, one end of the large length-diameter ratio cavity is connected with a vacuum unit through a vacuum end adapter, the other end of the large length-diameter ratio cavity is connected with a cylindrical magnetron target through a target material adapter, the cylindrical magnetrontarget is arranged in the large length-diameter ratio cavity, and after magnetron sputtering parameters are adjusted, the surface of the inner wall of the pipe is in a negative glow region of glow discharge. According to the device and the method, the 100% alpha-Ta coating can be deposited, and the ablation resistance of the coating is obviously superior to that of a conventional electroplating chromium coating, so that a chrome plating process which is used on a large scale at the present stage and causes severe environment pollution can be replaced. The device and the method are used for preparing the protective coating of the inner cavity of the pipe with the large length-diameter ratio.

The invention discloses a preparation method of a magnetron sputtering alpha-Ta coating of an inner cavity with a large length-diameter ratio and an application thereof, and belongs to the technical field of the magnetron sputtering coating. According to the method, the large length-diameter ratio inner cavity is used as a vacuum cavity, a cylindrical magnetron target is used as a deposition source, and extends into the inner cavity for deposition, wherein the diameter difference between the outer wall of a target material and the large length-diameter ratio inner cavity is controlled to be between 50 mm-65 mm, and after magnetron sputtering parameters are adjusted, the surface of the inner wall of a pipe is in a negative glow region of glow discharge. The pipe of the large length-diameterratio is heated to 150-250 DEG C. The used power supply is a direct-current power supply or a pulsed power supply, the target material is pure tantalum, working gas is Ar, and the sputtering power density is 2.5W/cm<2>-10W/cm<2>. According to the method, the 100% alpha-Ta coating can be deposited, the bonding force and the ablation resistance of the coating are obviously superior to those of a conventional electroplating chromium coating, so that the method can be used for replacing a chrome plating process which is used on a large scale at the present stage and causes severe environment pollution.

The invention belongs to the technical field of metal heat treatment, and relates to a high-temperature nitriding ultrafine deformation control method of a thin-walled dual-shell titanium alloy bushing. According to the high-temperature nitriding ultrafine deformation control method of the thin-walled dual-shell titanium alloy bushing, a titanium alloy ion nitriding furnace with an auxiliary heatsource is used, isoelectric potential local negative glow area space is built with the aid of an auxiliary cathode cylinder-shaped tool, and a hollow cathode effect between double shells is eradicatedcompletely by adopting mechanical shielding; and by a way of overlapping geometric centers of parts, the tool and an effective working area in the ion nitriding furnace, step-type temperature rise, heat preservation and temperature reduction with 300 DEG C-450 DEG C and 500 DEG C-650 DEG C are adopted when ion nitriding is carried out, temperature preservation time is 2-4 hours after the temperature is reached, the rate of heating up and cooling is controlled at 0.5-4 DEG C/min, high temperature annealing with 850 DEG C-950 DEG C is carried out before the nitriding is carried out, a glow heating system is started when the temperature is raised to 300 DEG C-400 DEG C, and nitriding is carried out for 6-20 hours at 750 DEG C-880 DEG C. By comprehensive application of the means, the high-temperature ion nitriding deformation ultrafine control over titanium alloy bushing parts with thin-walled dual-shell complex structures is achieved, and the deformation amount is less than or equal to 0.020mm.

The invention discloses a PLD system provided with hollow cathode plasma and a preparation method of a thin film. The system is provided with a plasma discharge system in a vacuum cavity of an existing PLD system; and only the middle part of a gas path stainless steel pipe in the existing PLD system is replaced by an aluminum oxide insulating ceramic pipe, one end of the pipe is connected with a power supply, and the other end of the pipe is connected with a gas circuit, so a discharge device is formed. According to the device, negative glow regions of oxygen plasmas can be overlapped, the collision frequency of electrons and gas atoms is increased, ionization effect is remarkably improved, the concentration of the oxygen plasmas in a pulse laser deposition cavity is effectively improved, the content of oxygen vacancies in an ITO thin film is reduced, the problem that the threshold voltage of an amorphous ITO thin film transistor is slightly negative is solved, the subthreshold swing and mobility of the device are optimized to a certain extent, and the performance of the thin film transistor is improved.

The invention relates to the technical field of photoelectricity, in particular to a negative photoresist regeneration method for a part of a mask aligner during the yellow-light process. According to the negative photoresist regeneration method for the part of the mask aligner during the yellow-light process, negative photoresist of the part of the mask aligner during the yellow-light process is cleaned and removed for regeneration and use by combining a conventional ketone organic solvent and an amide solvent which are low in toxicity and even almost have no toxicity, the ketone organic solvent and the amide solvent are combined according to a scientific and reasonable proportion, the dissolving capacity and the evaporation rate of a compound solvent are greatly improved, the cleaning effect is good, a cleaning liquid is low in cost, and the method is friendly to an environment; and meanwhile, the amide solvent and the ketone organic solvent both have reducibility, thus, corrosion and aging of a surface of the part can be prevented very well, the part can be prevented from being corroded and aged very well, the regeneration and usage effect of the part is ensured, and the application of the part cannot be affected. By using an immersion cleaning liquid and the regeneration method, the regeneration frequency of the negative photoresist of the part of the mark aligner during the yellow-light process can reach 100 times.

A plasma flat light source relates to the technical field of plasma flat light sources, in particular to the technical field of a low-frequency drive pattern of a plasma flat light source. The plasma flat light source comprises a front base plate, a rear base plate and an electric discharge cavity, wherein, the electric discharge cavity is arranged between the front base plate and the rear base plate; a plurality of parallel poles are arranged between the front base plate and the electric discharge cavity in parallel and at equal intervals; protective films are arranged among the parallel poles and the electric discharge cavity; and a phosphor powder mixed layer is arranged between the rear base plate and the electric discharge cavity. The plasma flat light source provides the low-frequency drive pattern aiming at the negative glow discharging pattern in the working mode of the prior plasma flat light source, ensures that the plasma flat light source produces the positive column discharging working pattern, and simultaneously improves the luminous efficiency and the luminous brightness.

The invention provides a preparation method of a high-aspect-ratio light trapping structure for the surface of a silicon thin film battery. The preparation method is characterized in that the process flow of the high-depth and wide-pit array structure on the surface of a glass substrate by using a negative photoetching plate comprises the following steps of: (a) sputtering a metal seed layer, and spin-coating photoresist; (b) carrying out photoetching and developing; (c) electroplating nickel metal (Ni); (d) removing photoresist; (e) etching a seed layer; (f) performing reactive ion etching on the glass substrate; (g) etching the glass substrate with hydrofluoric acid (HF); and (h) removing the metal layer. According to the preparation method, the pit array with the high aspect ratio can be prepared on the surface of the glass, and the reflection can be reduced and the optical path can be prolonged. The preparation method can be used for a surface pit array structure, and by adopting the efficient surface light trapping structure, light energy loss on the surface of the cell can be reduced, light energy escape in the cell can be reduced, meanwhile, the light path of light in a cell absorption layer can be prolonged, and therefore the efficiency of the silicon thin film solar cell is improved.

The invention discloses a transfer printing type manufacturing method of a brightness enhancement film and the brightness enhancement film. The transfer printing type manufacturing method of the brightness enhancement film comprises the following steps: manufacturing a brightness enhancement film transfer printing roller; and rolling a light-transmitting film by using the brightness enhancement film transfer printing roller to form a brightness enhancement film. The manufacturing process of the brightness enhancement film transfer roller comprises the following steps of coating a negative photoresist layer on the outer surface of a light-transmitting round tube; matching a light source with a light cover to jointly extend into the light-transmitting round tube, and enabling the light-transmitting round tube to penetrate through the light-transmitting round tube in a preset light shape and irradiate the negative light resistance layer; rotating the light source and the light cover relative to the light-transmitting circular tube, so that one part of the negative light resistance layer on the outer surface of the light-transmitting circular tube can be irradiated by light with a preset light shape to form a prism microstructure transfer printing layer; and removing the other part of the negative photoresist layer on which the prism microstructure transfer printing layer is not formed to form the brightness enhancement film transfer printing roller. According to the brightness enhancement film provided by the invention, the manufacturing time and the manufacturing cost of the brightness enhancement film can be greatly reduced through the transfer printing type manufacturing method of the brightness enhancement film.