Preparation method of high-aspect-ratio light trapping structure for surface of silicon thin film battery

A light-trapping structure and high aspect ratio technology, which can be used in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of poor fidelity effect, affecting the improvement of battery efficiency, high cost of laser etching glass and not suitable for mass production needs, etc.

Pending Publication Date: 2021-06-15
GUILIN UNIV OF ELECTRONIC TECH
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  • Claims
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Problems solved by technology

As a result, the light trapping characteristics of the glass are restricted, which affects the improvement of battery efficiency.
Moreover, the high cost of laser etching glass is not s

Method used

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  • Preparation method of high-aspect-ratio light trapping structure for surface of silicon thin film battery
  • Preparation method of high-aspect-ratio light trapping structure for surface of silicon thin film battery
  • Preparation method of high-aspect-ratio light trapping structure for surface of silicon thin film battery

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Embodiment Construction

[0035] The present invention will be further described below in conjunction with specific examples.

[0036] figure 1 An example of preparing a pit array structure with a high aspect ratio on a glass surface by using a dry-wet method is given. Using a negative photolithography plate, the technological process of forming an array structure of high, deep and wide pits on the surface of a glass substrate is as follows: (a) sputtering a metal seed layer and spin-coating a photoresist. The present invention adopts Cr / Cu (50nm / 150nm) combination. That is, first sputter a 50nm Cr metal layer on the glass surface, and then sputter a 150nm Cu metal layer on the Cr metal layer. Spin coating 3-5μm photoresist, positive resist; (b) photolithography, development. Using 415nm ultraviolet light, photolithography in SUSS double-sided alignment contact lithography, then developing, and finally baking in an oven; (c) electroplating Ni metal. On the Cr / Cu metal seed layer, a 2-3 μm Ni metal...

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Abstract

The invention provides a preparation method of a high-aspect-ratio light trapping structure for the surface of a silicon thin film battery. The preparation method is characterized in that the process flow of the high-depth and wide-pit array structure on the surface of a glass substrate by using a negative photoetching plate comprises the following steps of: (a) sputtering a metal seed layer, and spin-coating photoresist; (b) carrying out photoetching and developing; (c) electroplating nickel metal (Ni); (d) removing photoresist; (e) etching a seed layer; (f) performing reactive ion etching on the glass substrate; (g) etching the glass substrate with hydrofluoric acid (HF); and (h) removing the metal layer. According to the preparation method, the pit array with the high aspect ratio can be prepared on the surface of the glass, and the reflection can be reduced and the optical path can be prolonged. The preparation method can be used for a surface pit array structure, and by adopting the efficient surface light trapping structure, light energy loss on the surface of the cell can be reduced, light energy escape in the cell can be reduced, meanwhile, the light path of light in a cell absorption layer can be prolonged, and therefore the efficiency of the silicon thin film solar cell is improved.

Description

[0001] (1) Technical field [0002] The invention relates to a method for preparing a high-aspect-ratio light-trapping structure used on the surface of a silicon thin-film battery, which can be used to prepare a high-aspect-ratio pit array structure on the glass surface to improve the light-trapping characteristics of the light-trapping structure. The efficient surface light trapping structure can not only reduce the loss of light energy on the surface of the battery, but also reduce the escape of light energy inside the battery, and at the same time extend the optical path of light in the absorbing layer of the battery, thereby improving the efficiency of silicon thin film solar cells. The invention belongs to the field of micro-nano processing, and specifically relates to an etching method combining a dry method and a wet method. [0003] (2) Background technology [0004] Solar cells have the advantages of simple preparation process, large-area preparation and low cost, but ...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0236
CPCH01L31/02363H01L31/1804Y02E10/547Y02P70/50
Inventor 陈乐孙嘉伟方博闻罗炜
Owner GUILIN UNIV OF ELECTRONIC TECH
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