10 results about "Hydrogen selenide" patented technology

The present invention relates to the technical field of hydrogen selenide production, and provides a gravity back-blowing heat exchange reaction tower and a method for synthesizing hydrogen selenide. The present invention utilizes the principle of gravity back-blowing. When the heat exchange tower is blocked, a direction-changing valve group is used in conjunction with a membrane press to reverse the direction of the hydrogen selenide product airflow and perform product gas back-blowing. At the same time, a hot oil circulation heater is used to control the temperature of the heat exchanger to above the melting point of selenium. The molten selenium refluxes to the reaction tower under the dual effects of gravity and gas back-blowing. The gravity back-blowing heat exchange reaction tower of the present invention is used to produce hydrogen selenide. While ensuring the removal of selenium impurities in the crude hydrogen selenide product, it can solve the problem of heat exchanger blockage in the production process. No manual disassembly and cleaning is required. The operation and use are convenient and stable. During the production process, pipe unblocking and raw material recycling and reuse can be completed, ensuring stable and continuous production operation, greatly improving the production efficiency of hydrogen selenide, and greatly saving the operation and maintenance costs of the heat exchanger.

A method for passivating grain boundaries of a CdTe-based thin film layer, comprises forming a CdTe-based thin film layer and treating the CdTe-based thin film layer with a gas comprising hydrogen selenide, wherein a temperature of the CdTe-based thin film layer is in the range of 100℃ to 200℃ or with the CdTe-based thin film layer having some humidity present. After that, an oxygen-containing atmosphere is provided to the CdTe-based thin film layer resulting in oxidizing the adsorbed hydrogen selenide and providing elemental selenium or selenium ions. Furthermore, a method for forming a photovoltaic device including the method for passivating grain boundaries of a CdTe-based thin film layer and a photovoltaic device resulting from this method are provided.

The application provides a hydrogen selenide purification device and method, in particular to removal of trace oxygen, hydrogen and water impurities in hydrogen selenide, and relates to the technical field of electronic special gas purification. In the variable-temperature purifier A, hydrogen and oxygen impurities in the hydrogen selenide react to generate water under the action of a catalyst, so that the hydrogen and part of the oxygen are removed, and the reaction principle is: H2+1 / 2O2 Catalyst The oxygen impurities in the hydrogen selenide are removed in the variable-temperature purifier B, and the principle is: 2H2Se+O2=2H2O+Se.When the impurity water in the hydrogen selenide is overproof, the purification device further comprises a normal-temperature purifier C, and the second adsorbent in the normal-temperature purifier C is used to remove the water generated in the variable-temperature purifier and the impurity water carried by the hydrogen selenide itself. The method provided by the application can remove the oxygen, hydrogen and water impurities without rectification and low-temperature evacuation, and the process is safe and simple to operate.

The application discloses a micro-fluidic chip, comprising: a sample injection module, which injects a sample to be mixed into a micro-reservoir mixing module in a controllable injection amount through an external circuit driving a syringe pump; the micro-reservoir mixing module is used for fully mixing a sample containing selenium after digestion, thiocyanate, hydrochloric acid fluid, carrier gas and carrier fluid, and then the mixture enters a thiocyanate online pre-reduction module; the thiocyanate online pre-reduction module generates hydrogen selenide gas through heating reaction and refrigeration reduction reaction and enters a micro-gas-liquid separation chip; a semiconductor refrigeration module is arranged below the thiocyanate online pre-reduction module and is used for real-time control of the temperature of semiconductor refrigeration pieces, so that the heating reaction and the refrigeration reduction reaction are realized; and a collection module is used for collecting the obtained hydrogen selenide gas. The sample is mixed through the micro-reservoir mixing module, and then the heating reaction and the refrigeration reduction reaction are carried out in a reaction area of the thiocyanate online pre-reduction module to generate hydrogen selenide gas, so that the synthesis and reduction time of selenium elements is shortened.

The invention relates to the technical field of organic synthesis, in particular to L-selenium-methyl selenocysteine and a continuous production method and system thereof. The production method comprises the following steps: S1, conveying a reducing agent, selenium powder and an acid solution into a dynamic tubular reactor for reaction to obtain hydrogen selenide gas; s2, the hydrogen selenide gas reacts with a bicarbonate solution to obtain selenium hydride salt, the selenium hydride salt reacts with a methylation reagent to obtain methyl selenol salt, and the methyl selenol salt reacts with a chloro-alanine salt solution to obtain L-selenium-methyl selenocysteine salt; s3, the L-selenium-methyl selenocysteine salt is subjected to acidification, and L-selenium-methyl selenocysteine is obtained; wherein the reaction in the step S2 is carried out in the microchannel reactor. According to the method disclosed by the invention, continuous production of the L-selenium-methyl selenocysteine can be realized, the reaction efficiency is improved, and possibility is provided for mass production.

The application provides a gradient band gap selenium antimony sulfide solar cell and a preparation method thereof. The gradient band gap selenium antimony sulfide solar cell adopts a double gradient band gap selenium antimony sulfide as an absorption layer. The double gradient band gap selenium antimony sulfide absorption layer is prepared by a jet carrier gas transport vapor deposition technology, with selenium antimony sulfide particles as a source and hydrogen selenide as a selenium source. In the preparation process, the hydrogen selenide flow is adjusted from small to large and then from large to small, so that the double gradient band gap selenium antimony sulfide absorption layer is obtained. The method provided by the application is a method for depositing a selenium antimony sulfide film by using the jet carrier gas transport vapor deposition technology, and the flow of the hydrogen selenide is adjusted, so that the double gradient band gap selenium antimony sulfide absorption layer is prepared. The application provides a new preparation method of the gradient band gap selenium antimony sulfide solar cell, and the band gap structure of the selenium antimony sulfide absorption layer can be effectively optimized, which is helpful to improving the performance of the device.

The application relates to a nanometer ferroselenide assembled microscale material, a preparation method and application. The application discloses a nanometer ferroselenide secondary stacking material, a preparation method and application thereof. The material has a three-dimensional structure, and the three-dimensional porous structure is formed by stacking of ferroferric oxide nanospheres. The preparation method is as follows: iron source containing ferric ions is added into ethylene glycol, and the ferroferric oxide nanometer material with secondary stacking can be obtained through a one-step method. The material is coated by dopamine hydrochloride. Metal ions introduced at the same time generate hydrogen selenide gas in a high-temperature heating process, and ferroselenide nanoparticles are generated in situ. The nanometer ferroselenide secondary stacking material provided by the application has excellent performance on a sodium ion battery and has a good application prospect.

The utility model relates to metallurgical technical field discloses a device for selenium tellurium separation extraction refined selenium, including base, the base upper end one side fixed mounting is used for carrying out oxidation reduction reaction's reaction kettle, the reaction kettle upper end face one side fixedly connected with the storage kettle for storing oxidizing agent, the base upper end face fixedly connected with the gas extraction assembly for absorbing the gas in reaction kettle. The utility model discloses gas extraction assembly through the gas pump will be excessive sulfur dioxide of oxidation reduction reaction absorption to the processing jar, avoid the acidity of excessive sulfur dioxide and the reaction reverse and carry out, ensure selenium reduction rate, improve the reaction rate, can reduce selenium tellurium coprecipitation and the generation of toxic hydrogen selenide simultaneously, improve refined selenium purity, and the gas absorption to the processing jar can be through the treatment of alkaline treatment liquid and activated carbon board, prevent sulfur dioxide emission pollution processing environment, avoid the harm to the health of operator.

The invention belongs to the technical field of infrared optical material preparation, and particularly relates to a device for preparing polycrystalline zinc selenide through pure solid feeding and a growth method, and the device comprises a furnace body, a main dust collection system and a secondary dust collection system; the furnace body, the main dust collection system and the secondary dust collection system are sequentially communicated in series through an air guide pipe, and pneumatic ball valves and butterfly valves are arranged on the air guide pipe at intervals; the furnace body comprises a water-cooling furnace body, a furnace body heat preservation cylinder, a heater, a first vacuum gauge, a thermocouple, a lower thermal field sleeve, an air inlet pipe and a graphite tower; the water-cooling furnace body comprises a water-cooling upper furnace cover and a water-cooling lower furnace cover, and the water-cooling upper furnace cover covers the water-cooling lower furnace cover to jointly form a closed cavity of the furnace body. Pure solid zinc and selenium are adopted as raw materials, hydrogen selenide highly toxic gas does not need to be used, and the risk of toxic gas leakage is reduced from the source; no hydrogen is generated in the production process, the occurrence probability of safety accidents is reduced, meanwhile, no hydrogen selenide cooling device needs to be additionally arranged, and the equipment structure is simplified.

The utility model provides a hydrogen selenide tail gas treatment device for CVD zinc selenide production and a CVD zinc selenide production system. The hydrogen selenide tail gas treatment device for CVD zinc selenide production comprises a heating decomposition mechanism, a primary filter, a selenium cooling mechanism and a secondary filter, the heating decomposition mechanism is used for heating hydrogen selenide-containing tail gas in the tail gas pipeline so as to decompose hydrogen selenide into hydrogen and selenium steam; the primary filter is at least used for filtering the tail gas passing through the heating decomposition mechanism; the selenium cooling mechanism is connected to the tail end of the tail gas pipeline and is at least used for receiving the tail gas passing through the primary filter and cooling selenium steam into solid selenium powder; the secondary filter is used for receiving the tail gas containing the solid selenium powder from the selenium cooling mechanism, filtering and recycling the powder and discharging the tail gas after the powder is filtered and recycled to the mechanical pump and the tail gas absorption tower. The CVD zinc selenide production system comprises a chemical deposition furnace, a mechanical pump adopting pump oil to vacuumize, a tail gas absorption tower and a CVD zinc selenide production hydrogen selenide tail gas treatment device.