5 results about "Hydrogen selenide" patented technology

The invention relates to the technical field of organic synthesis, in particular to L-selenium-methyl selenocysteine and a continuous production method and system thereof. The production method comprises the following steps: S1, conveying a reducing agent, selenium powder and an acid solution into a dynamic tubular reactor for reaction to obtain hydrogen selenide gas; s2, the hydrogen selenide gas reacts with a bicarbonate solution to obtain selenium hydride salt, the selenium hydride salt reacts with a methylation reagent to obtain methyl selenol salt, and the methyl selenol salt reacts with a chloro-alanine salt solution to obtain L-selenium-methyl selenocysteine salt; s3, the L-selenium-methyl selenocysteine salt is subjected to acidification, and L-selenium-methyl selenocysteine is obtained; wherein the reaction in the step S2 is carried out in the microchannel reactor. According to the method disclosed by the invention, continuous production of the L-selenium-methyl selenocysteine can be realized, the reaction efficiency is improved, and possibility is provided for mass production.

The application provides a gradient band gap selenium antimony sulfide solar cell and a preparation method thereof. The gradient band gap selenium antimony sulfide solar cell adopts a double gradient band gap selenium antimony sulfide as an absorption layer. The double gradient band gap selenium antimony sulfide absorption layer is prepared by a jet carrier gas transport vapor deposition technology, with selenium antimony sulfide particles as a source and hydrogen selenide as a selenium source. In the preparation process, the hydrogen selenide flow is adjusted from small to large and then from large to small, so that the double gradient band gap selenium antimony sulfide absorption layer is obtained. The method provided by the application is a method for depositing a selenium antimony sulfide film by using the jet carrier gas transport vapor deposition technology, and the flow of the hydrogen selenide is adjusted, so that the double gradient band gap selenium antimony sulfide absorption layer is prepared. The application provides a new preparation method of the gradient band gap selenium antimony sulfide solar cell, and the band gap structure of the selenium antimony sulfide absorption layer can be effectively optimized, which is helpful to improving the performance of the device.

The application relates to a nanometer ferroselenide assembled microscale material, a preparation method and application. The application discloses a nanometer ferroselenide secondary stacking material, a preparation method and application thereof. The material has a three-dimensional structure, and the three-dimensional porous structure is formed by stacking of ferroferric oxide nanospheres. The preparation method is as follows: iron source containing ferric ions is added into ethylene glycol, and the ferroferric oxide nanometer material with secondary stacking can be obtained through a one-step method. The material is coated by dopamine hydrochloride. Metal ions introduced at the same time generate hydrogen selenide gas in a high-temperature heating process, and ferroselenide nanoparticles are generated in situ. The nanometer ferroselenide secondary stacking material provided by the application has excellent performance on a sodium ion battery and has a good application prospect.

The utility model relates to metallurgical technical field discloses a device for selenium tellurium separation extraction refined selenium, including base, the base upper end one side fixed mounting is used for carrying out oxidation reduction reaction's reaction kettle, the reaction kettle upper end face one side fixedly connected with the storage kettle for storing oxidizing agent, the base upper end face fixedly connected with the gas extraction assembly for absorbing the gas in reaction kettle. The utility model discloses gas extraction assembly through the gas pump will be excessive sulfur dioxide of oxidation reduction reaction absorption to the processing jar, avoid the acidity of excessive sulfur dioxide and the reaction reverse and carry out, ensure selenium reduction rate, improve the reaction rate, can reduce selenium tellurium coprecipitation and the generation of toxic hydrogen selenide simultaneously, improve refined selenium purity, and the gas absorption to the processing jar can be through the treatment of alkaline treatment liquid and activated carbon board, prevent sulfur dioxide emission pollution processing environment, avoid the harm to the health of operator.

The invention belongs to the technical field of infrared optical material preparation, and particularly relates to a device for preparing polycrystalline zinc selenide through pure solid feeding and a growth method, and the device comprises a furnace body, a main dust collection system and a secondary dust collection system; the furnace body, the main dust collection system and the secondary dust collection system are sequentially communicated in series through an air guide pipe, and pneumatic ball valves and butterfly valves are arranged on the air guide pipe at intervals; the furnace body comprises a water-cooling furnace body, a furnace body heat preservation cylinder, a heater, a first vacuum gauge, a thermocouple, a lower thermal field sleeve, an air inlet pipe and a graphite tower; the water-cooling furnace body comprises a water-cooling upper furnace cover and a water-cooling lower furnace cover, and the water-cooling upper furnace cover covers the water-cooling lower furnace cover to jointly form a closed cavity of the furnace body. Pure solid zinc and selenium are adopted as raw materials, hydrogen selenide highly toxic gas does not need to be used, and the risk of toxic gas leakage is reduced from the source; no hydrogen is generated in the production process, the occurrence probability of safety accidents is reduced, meanwhile, no hydrogen selenide cooling device needs to be additionally arranged, and the equipment structure is simplified.