Group VA-doped solution-processed metal chalcogenides

Abstract

A method is provided for forming a Group VA-doped solution-processed metal chalcogenide. The method forms a first solution including a first material group, dissolved in solvent. A Group VA-containing material is added to the first solution. The Group VA-containing material may include arsenic (As), antimony (Sb), bismuth (Bi), or combinations thereof. The first solution is deposited on a conductive substrate, and a Group VA-doped first intermediate film is formed comprising metal precursors from corresponding members of the first material group. Thermal annealing is performed in an environment of selenium (Se), Se and hydrogen (H2), hydrogen selenide (H2Se), sulfur (S), S and H2, hydrogen sulfide (H2S), or combinations thereof. As a result, the metal precursors in the Group VA-doped first intermediate film are transformed, forming a Group VA-doped metal chalcogenide layer. In one aspect, an antimony-doped Cu—In—Ga—Se chalcogenide (CIGS) is formed.

Description

RELATED APPLICATION[0001]The application is a Continuation-in-Part of an application entitled, ALKALI METAL-DOPED SOLUTION-PROCESSED METAL CHALCOGENIDES, invented by Sean Vail et al., Ser. No. 13 / 773,283, filed on Feb. 21, 2013;[0002]which is a Continuation-in-Part of an application entitled, SOLUTION-PROCESSED METAL SELENIDE SEMICONDUCTOR USING DEPOSITED SELENIUM FILM, invented by Sean Vail et al., Ser. No. 13 / 719,052, filed on Dec. 18, 2012;[0003]which is a Continuation-in-Part of an application entitled, ELECTROCHEMICAL SYNTHESIS OF SELENIUM NANOPARTICLES, invented by Wei Pan et al., Ser. No. 13 / 711,356, filed on Dec. 11, 2012;[0004]which is a Continuation-in-Part of an application entitled, SOLUTION-PROCESSED METAL SELENIDE SEMICONDUCTOR USING SELENIUM NANOPARTICLES, invented by Sean Vail et al., Ser. No. 13 / 674,005, filed on Nov. 10, 2012. The above-mentioned applications are incorporated herein by reference.BACKGROUND OF THE INVENTION[0005]1. Field of the Invention[0006]This i...

AI Technical Summary

Benefits of technology

The patent describes a method for making a high-quality antimony-doped CIGS absorber layer using a solution-based approach. The method involves depositing a precursor film of copper, indium, gallium, and selenium onto a conductive substrate, and then subjecting it to a thermal annealing process in the presence of selenium. The resulting layer has improved performance and morphology compared to traditional vacuum and electrodeposition methods. The method can be carried out using hydrazine-based solvents or low-boiling alcohols or acids. The use of antimony as a dopant in CIGS has been shown to improve performance, and the method described herein offers a safer alternative to hydrazine. The patent also describes a method for making a Group VA-doped metal chalcogenide layer by depositing a precursor film and then subjecting it to a thermal annealing process in the presence of selenium. The method can be carried out using various first material groups, such as aluminum, antimony, arsenic, bismuth, cadmium, chromium, cobalt, copper, gallium, germanium, gold, iron, lead, manganese, mercury, molybdenum, nickel, niobium, osmium, palladium, platinum, rhodium, ruthenium, silver, tantalum, tin, titanium, tungsten, vanadium, zinc, zirconium, and combinations thereof.

Problems solved by technology

As mentioned the Background Section above, solution-processed approaches to CIGS absorber layer fabrication have historically demonstrated lower performances relative to vacuum and electrodeposition methods.

Unfortunately, the hazards associated with hydrazine may limit the practical application of such approaches in manufacturing capacities.

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