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Growth method of zinc selenide

A growth method, zinc selenide technology, applied in the field of infrared materials, can solve problems such as product cracking, achieve the effects of eliminating stress, reducing production costs, and increasing growth rate

Active Publication Date: 2020-12-18
安徽中飞科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Finally, zinc selenide is an infrared material, and the product is relatively brittle. There is a large stress in the product during the deposition process. If the stress cannot be released well, it is easy to cause the product to crack during cooling or subsequent processing.

Method used

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  • Growth method of zinc selenide
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Examples

Experimental program
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Effect test

Embodiment 1

[0043] In the chemical vapor deposition furnace, a deposition chamber with a length of 600mm, a width of 300mm, and a height of 1100mm was used. Zinc ingots with a purity of 99.999% were loaded into the crucible, vacuumed, and the vacuum degree was 3000Pa, and leak detection was performed. After passing the test, start the temperature program. The heating rate of the crucible is 0.3°C / min, and the heating rate of the deposition chamber is 0.5°C / min. The temperature of the crucible is raised to 650°C, and the temperature of the deposition chamber is raised to 700°C. Then respectively in the crucible and the deposition chamber, the argon flow that passes into the crucible is 30L / min, and the evaporation rate of zinc vapor is 5L / min; the hydrogen selenide flow that passes into the deposition chamber is 5.5L / min , the flow rate of argon mixed with hydrogen selenide into the deposition chamber was 55 L / min, and the deposition rate was controlled at 80 μm / h to deposit zinc selenide. ...

Embodiment 2

[0045]In the chemical vapor deposition furnace, a deposition chamber with a length of 500 mm, a width of 400 mm, and a height of 1200 mm was used. Zinc ingots with a purity of 99.999% were loaded into the crucible, vacuumed, and the vacuum degree was 5800 Pa. Leak detection. After passing the test, start the temperature program. The heating rate of the crucible is 0.5°C / min, the heating rate of the deposition chamber is 0.8°C / min, the temperature of the crucible is raised to 680°C, and the temperature of the deposition chamber is raised to 750°C. Then respectively in the crucible and the deposition chamber, the argon flow that passes into the crucible is 50L / min, and the evaporation rate of zinc vapor is 7L / min; the flow of hydrogen selenide that passes into the deposition chamber is 9L / min The flow rate of argon gas mixed with hydrogen selenide into the deposition chamber is 100 L / min, and the deposition rate is controlled at 110 μm / h to deposit zinc selenide. After the depos...

Embodiment 3

[0047] In the chemical vapor deposition furnace, a deposition chamber with a length of 650 mm, a width of 250 mm, and a height of 800 mm was used. Zinc ingots with a purity of 99.999% were loaded into the crucible, vacuumed, and the vacuum was 10,000 Pa. Leak detection. After passing the test, start the temperature program. The heating rate of the crucible is 0.8°C / min, and the heating rate of the deposition chamber is 1°C / min. The temperature of the crucible is raised to 700°C, and the temperature of the deposition chamber is raised to 800°C. Then respectively in the crucible and the deposition chamber, the argon flow that passes into the crucible is 80L / min, and the evaporation rate of zinc vapor is 8L / min; the hydrogen selenide flow that passes into the deposition chamber is 10L / min, The flow rate of argon mixed with hydrogen selenide into the deposition chamber is 150 L / min, and the deposition rate is controlled at 150 μm / h to deposit zinc selenide. After the deposition is...

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Abstract

The invention provides a growth method of zinc selenide, which comprises the following steps: a. Putting zinc into a crucible in a chemical vapor deposition furnace, replacing air in the deposition furnace with argon, and vacuumizing until the vacuum degree is 3000Pa-10000Pa; b, heating a deposition chamber in the chemical vapor deposition furnace to a deposition temperature of 700 DEG C to 800 DEG C, and heating the crucible to an evaporation temperature of 650 DEG C to 700 DEG C; c, respectively introducing gas into the crucible and the deposition chamber to carry out a vapor deposition reaction of zinc selenide, introducing argon into the crucible, and introducing argon and hydrogen selenide into the deposition chamber to make the deposition rate of zinc selenide be 50-150 [mu]m / h; andd, after the reaction is finished, maintaining the same pressure and gas flow as those in the deposition process, continuously heating the deposition chamber to 50 DEG C to 170 DEG C, keeping the temperature constant for the first time, cooling to 500 DEG C to 650 DEG C, keeping the temperature constant again, and cooling the reaction product to room temperature to obtain the zinc selenide product. The growth method of zinc selenide provided by the invention can be used for producing the polycrystalline zinc selenide material with large size, thickened size and high optical performance.

Description

technical field [0001] The present disclosure relates to the field of infrared materials, in particular to a growth method of zinc selenide. Background technique [0002] The Chinese patent with publication number CN101759161B discloses a method for preparing zinc selenide with high optical quality. The patent mentions that the deposition pressure of zinc selenide is 1×10 4 -5×10 4 Pa, the deposition temperature is 650-800°C, the flow rate of hydrogen selenide is 0.5-2L / min, the flow rate of argon gas is 5-20L / min, and the molar ratio of zinc to hydrogen selenide is 0.8-1.2. The zinc selenide deposition mentioned in the patent has a large vacuum value, and the high pressure leads to an excessive growth rate of zinc selenide, and the number of defects in the product increases, including fog layers, fog spots, inclusions, bubbles, etc. At the same time, in the patent It is mentioned that the flow rate of hydrogen selenide is 0.5-2L / min, the molar ratio of zinc to hydrogen se...

Claims

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Application Information

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IPC IPC(8): C30B29/48C30B28/14
CPCC30B29/48C30B28/14
Inventor 于金凤朱刘
Owner 安徽中飞科技有限公司
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