83 results about "Selenium hydride" patented technology

A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a transition metal nitride. A copper indium gallium diselenide (Cu(In_XGa_1-x)Se₂) absorber layer (X ranging from 1 to approximately 0.7) is co-sputtered from specially prepared electrically conductive targets using dual cylindrical rotary magnetron technology. The band gap of the absorber layer can be graded by varying the gallium content, and by replacing the gallium partially or totally with aluminum. Alternately the absorber layer is reactively sputtered from metal alloy targets in the presence of hydrogen selenide gas. RF sputtering is used to deposit a non-cadmium containing window layer of ZnS. The top transparent electrode is reactively sputtered aluminum doped ZnO. A unique modular vacuum roll-to-roll sputtering machine is described. The machine is adapted to incorporate dual cylindrical rotary magnetron technology to manufacture the improved solar cell material in a single pass.

The invention provides a preparation method of a lithium-selenium battery. The preparation method comprises the steps of providing an oxidized graphene dispersing liquid with saturated inert atmosphere; feeding hydrogen selenide gas to the oxidized graphene dispersing liquid with saturated inert atmosphere, reducing the oxidized graphene to graphene by taking the insert atmosphere as carrier gas, and meanwhile, generating elemental selenium on the surface of the graphene to obtain an elemental selenium-graphene dispersing liquid; performing solvent thermal treatment on the selenium-loaded graphene dispersing liquid to obtain graphene-based gel; and drying the graphene-based gel. The invention further provides a lithium-selenium battery positive electrode material and a lithium-selenium battery using the positive electrode material.

The invention discloses a preparation method for a CIGSeS, CIGSe or CIGS thin-film solar cell absorption layer. After a base conductive film and a metal precursor film are prepared in sequence, a selenylation and/or sulfurization reaction source is excited into free or ionized selenium molecules and/or sulfur molecules in vacuum due to high temperature and plasma discharge, and then selenylation and/or sulfurization reaction is carried out on the metal precursor film. The invention also discloses coating equipment of a CIGSeS, CIGSe or CIGS thin-film solar cell absorption layer which comprises a reaction vessel and a vacuum pump arranged outside the reaction vessel and communicated with the reaction vessel, wherein a rotating axle with an upper end extended into inside the reaction vessel is arranged under the reaction vessel, a plasma generator and a heating device are also arranged in the reaction vessel, and the reaction vessel is also provided with a shielding gas input device and a selenylation and/or sulfurization reaction source device in a communicating way. The invention can keep higher conversion efficiency of the original method, also avoids the use of highly toxic gas such as hydrogen selenide or hydrogen sulphide, enhances the security of coating processing, and also improves the use efficiency of the selenium source and/or the sulfur source.

A hydrothermal preparation method of a water-soluble ZnCdSe ternary quantum dot belongs to the nano technical field; the invention chooses zinc chloride or zinc Oxide as zinc source, sodium hydrogen selenide formed by selenium powder and sodium borohydride as selenium source, glutathione as stabilizer, leading the ZnSe precursor solution to be prepared under the protection of the nitrogen. The ZnSe precursor solution reacts in the hydrothermal environment to obtain the ZnSe quantum dot. The cadmium chloride or the cadmium Oxide chosen as cadmium source, and the glutathione chosen as the stabilizer are mixed together with the prepared ZnSe quantum dot to obtain the ZnCdSe precursor solution. The water-soluble ZnCdSe quantum dot is obtained by leading the ZnCdSe precursor solution to react in the hydrothermal environment. Due to the mild reaction condition, convenient operation and the simple equipment, the invention leads the water-soluble ZnCdSe quantum dot to be suitable for the industrial production with the better dispersion, better uniformity of the particle size and high fluorescent quantum efficiency. .

The invention discloses a method for generating a highly active selenium source used for selenizing treatment, and a device and application thereof. The method comprises the steps of heating and vaporizing solid selenium to generate selenium gas; adding hydrogen or a mixture of hydrogen and argon to the selenium gas generated by the last step; and subjecting the mixture of gases in the last step to glow discharge decomposition and synthesis to obtain hydrogen selenide and highly active selenium gas. The device for generating the selenium source comprises an airtight reaction tank, a solid selenium source in the reaction tank, a positive and a negative glow discharge electrodes, a hydrogen selenide reaction cavity, as well as a heating device and an excitation power supply outside the reaction tank. A gas inlet is further arranged on the lateral wall of the reaction tank; a gas outlet is arranged on the top of the reaction tank. The method not only retains the advantages of the solid selenium, namely low cost, non-toxicity and easiness to transport and store, prepares the hydrogen selenide and the highly active selenium ambience with the characteristics of the hydrogen selenide and the highly active selenium, but also saves a large amount of selenide materials, reduces the cost and has important practical value.

The invention relates to a preparation method of an aqueous phase non-toxic white light quantum with a multilayer core-shell structure. The preparation method comprises the following specific steps: (a) preparing a shell layer material Zn+mercaptopropionic acid (MPA)+thioacetamide (TAA): taking Zn(NO3)2 and adding the Zn(NO3)2 into a conical flask filled with deionized water, taking the MPA by using a miniature liquid-transferring gun; adding the TAA into the solution; fully stirring the solution and then adjusting the pH value of the mixed solution by using NaOH; and fully stirring the solution for later use; (b) adding the deionixed water, manganese chloride and the MPA in a three-necked bottle, adjusting the pH value and then introducing nitrogen gas and removing air in the three-necked bottle by using high-purity nitrogen gas; injecting sodium hydrogen selenide by using an injector and then allowing the manganese chloride and the sodium hydrogen selenide to be fully acted to form a selenide-rich MnSe quantum dot; then injecting zinc nitrate and growing for one hour; injecting the shell layer material in the step (a) and growing; then adding a copper chloride solution and growing; adding the shell layer material; and finally, regrowing to obtain the required white light quantum dot. The white light quantum dot synchronized by the preparation method is better in water solubility and stability and has broad application prospect.

The invention discloses a preparation method of ZnSe/ZnS core-shell quantum dots through illumination assisted room-temperature synthesis. The method comprises the steps of: A. preparing a potassium hydrogen selenide solution by reducing selenium powder with potassium borohydride; B. weighing zinc acetate crystals, which is then dissolved in deionized water to a constant volume, thus obtaining a zinc acetate solution; C. adding quantitative thioglycolic acid into the zinc acetate solution; D. adjusting the solution to a specific pH value with a sodium hydroxide solution; E. after introducing an inert gas for deoxygenation, adding the potassium hydrogen selenide solution; F. placing the stock solution or a diluted solution of the mixed solution under an ultraviolet light for radiation for a certain period of time, and conducting detection with fluorescence spectrum analysis; and G. adding isopropyl alcohol for purification, then carrying out drying by a freeze drier so as to obtain ZnSe/ZnS core-shell quantum dot solid powder, which is dissolved in a PBS solution or deionized water before using, thus obtaining a ZnSe/ZnS core-shell quantum dot solution. The method of the invention has the advantages of simple process, easily controllable technological parameters, as well as cheap raw materials. The synthesized ZnSe/ZnS core-shell quantum dots are free of heavy metal ions, and can be used for biological labeling and imaging.

The invention discloses a microwave preparation method of water soluble ZnSe quantum dots, which comprises the following steps: (1) mixing solution of sodium hydrogen selenide with solution serving as a zinc source to obtain solution of ZnSe precursor; and (2) heating the solution of the ZnSe precursor by microwaves to obtain water soluble ZnSe quantum dots, wherein the microwave heating conditions include a microwave power of 50 to 300W, a heating time period of 1 to 30 minutes and a heating temperature of 70 to 120 DEG C and the solution serving as the zinc source may be solution of a zinc salt, zinc oxide or zinc hydroxide. The obtained high fluorescent quantum product has high yield, stability and water solubility and can be widely used for making fluorescent labels for biological detection and analysis.

Disclosed are a hydrogen selenide preparation device and a method. According to the method, the hydrogen selenide is directly synthesized by hydrogen and selenium(Se), a hydrogen inlet pipeline (26) is fed into a selenium liquefaction and vaporization device (5), a primary synthetic reaction between the hydrogen and the selenium is started, synthesized an H2Se/Se/H2 mixing gas-liquid stream is fed into a filling tower-type synthesis reactor (8) and subjected to a continuous synthetic reaction, the Se in a selenium condensation separator (10) is condensed into liquid, then is separated and flows back to the synthesis reactor or the selenium liquefaction and vaporization device for continuing reacting, an H2Se/H2 mixing gas stream flows into a hydrogen selenide condensation separator (18), non-condensable gas hydrogen in the hydrogen selenide condensation separator is separated and conveyed back to the hydrogen inlet pipeline (26), the non-condensable gas hydrogen and the hydrogen are combined for supplying hydrogen, and finally, the H2Se is condensed and collected in the hydrogen selenide condensation separator.

The invention provides a method for preparing a photocatalytic material from heavy metal ions in a biological adsorption solution. Based on a biological adsorption technology, the heavy metal ions in industrial wastewater are adsorbed and enriched onto biomass powder particles, then the biomass powder loaded with the heavy metal ions is subjected to a contact reaction with reagents (sodium sulfide, sodium hydrosulfide, thiourea, hydrogen sulphide or sodium selenide, sodium hydrogen selenide, selenourea, hydrogen selenide and the like ) which can provide an S<2-> or Se<2-> source, so that the heavy metal ions adsorbed on the biomass powder particles are in-situ converted into corresponding metal sulfides (selenides). The method realizes a new way of high-valued utilization of various industrial wastewater containing low-concentration valuable metal ions, reaches purposes of economically and efficiently removing the low-concentration metal ions in the industrial wastewater in virtue of biological adsorption, has the highlight advantages of being fast to adsorb, low in cost, short in powder making flow, large in yield, and easy to scale.

The invention provides a growth method of zinc selenide, which comprises the following steps: a. Putting zinc into a crucible in a chemical vapor deposition furnace, replacing air in the deposition furnace with argon, and vacuumizing until the vacuum degree is 3000Pa-10000Pa; b, heating a deposition chamber in the chemical vapor deposition furnace to a deposition temperature of 700 DEG C to 800 DEG C, and heating the crucible to an evaporation temperature of 650 DEG C to 700 DEG C; c, respectively introducing gas into the crucible and the deposition chamber to carry out a vapor deposition reaction of zinc selenide, introducing argon into the crucible, and introducing argon and hydrogen selenide into the deposition chamber to make the deposition rate of zinc selenide be 50-150 [mu]m/h; andd, after the reaction is finished, maintaining the same pressure and gas flow as those in the deposition process, continuously heating the deposition chamber to 50 DEG C to 170 DEG C, keeping the temperature constant for the first time, cooling to 500 DEG C to 650 DEG C, keeping the temperature constant again, and cooling the reaction product to room temperature to obtain the zinc selenide product. The growth method of zinc selenide provided by the invention can be used for producing the polycrystalline zinc selenide material with large size, thickened size and high optical performance.

The invention discloses a method for measuring the content of selenium in molybdenum and a molybdenum product. The method comprises the following steps: sampling, preparing a sample solution and a sample blank solution, preparing a working curve solution, drawing a working curve, measuring the content of the selenium in the sample solution, and calculating. According to the method for measuring the content of the selenium in the molybdenum and the molybdenum product, provided by the invention, the problem that an existing hydride generation-atomic fluorescence spectrometry can not be applied to the measurement of the content of the selenium in the molybdenum and the molybdenum product because the selenium hydride of the molybdenum is difficult to form is solved. The method provided by the invention is simple and convenient to operate, high in efficiency and high in sensitivity; and the detection limit is 0.13ng/mL, the recovery rate is 90.23 percent-105.1 percent, and the measurement range of the content of the selenium is 0.0001-0.0050 percent.

The invention relates to a water-phase preparation method of ZnSe:Ag quantum dots, belonging to the technical field of composite nano microcrystal materials. The preparation method comprises the following steps: reacting sodium borohydride (NaBH4) and selenium powder to prepare sodium hydrogen selenide (NaHSe), and injecting the sodium hydrogen selenide into a zinc nitrate/3-mercaptopropionic acid solution of which the pH value is regulated by sodium hydroxide so as to react, thereby obtaining a light-brown transparent ZnSe:Ag quantum dot solution. The product obtained by the method provided by the invention has the advantages of uniform dispersion, high stability and less aggregation, and can be used in the fields of biological fluorescence labeling, drug isolation and some photoelectric devices.

The invention discloses a near-infrared copper-indium-selenium quantum dot and a preparation method thereof. The preparation method comprises the following steps: (1) dissolving cupric chloride or copper acetate, indium acetate, sodium hydrogen selenide and 3-mercaptopropionic acid according to the molar ratio of 1:2.5-5:4-8:24-26, so as to obtain a mixed solution, wherein the concentration of cupric chloride or copper acetate is 0.7-0.9 mmol/L; and (2) adjusting the pH value of the mixed solution obtained in the step (1) to 8-9, then heating the mixed solution at 93-98 DEG C for reaction for 60-90 min, and cooling to room temperature, so as to obtain the near-infrared copper-indium-selenium quantum dot. The prepared quantum dot has the advantages of being nontoxic, simple in method, mild and controllable in reaction conditions, short in reaction time, good in reappearance and the like. The prepared quantum dot is widely applicable to cell and tissue imaging as a fluorescent marker, and also is applicable to in vivo imaging research.

The invention relates to a method for preparing a copper-indium-gallium-selenium(sulfur) light absorption layer by adopting a non-vacuum process. The method comprises the following steps of: in a formula ratio, blending spherical and non-spherical two component powder, three component powder or four component powder containing IB, IIIA and VIA group elements to obtain copper-indium-gallium-selenium(sulfur)-containing mixed powder, wherein the average grain size of the powder is less than 500 nanometers; adding a solvent, NaI and an interface active agent into the copper-indium-gallium-selenium(sulfur)-containing mixed powder, stirring the mixture to obtain copper-indium-gallium-selenium(sulfur)-containing pulp; coating the pulp on a molybdenum electrode-containing substrate by a non-vacuum coating method, obtaining a copper-indium-gallium-selenium(sulfur)-containing light absorption precursor layer by soft-baking; and putting the copper-indium-gallium-selenium(sulfur)-containing light absorption precursor layer in a high-temperature RTA furnace containing VIA group element powder for growing crystals, and obtaining the copper-indium-gallium-selenium(sulfur) light absorption layer. In the method, because the spherical nanometer particles and at least one kind of non-spherical nanometer particles are mixed, the pore problems occurring in the film-forming process are solved; in addition, a selenization method is not adopted, so that the dangerous hydrogen selenide is avoided using.

The invention discloses a preparation method for a cadmium selenide-bismuth tungstate compound photocatalyst. The method comprises the following steps: (1) dissolving cadmium hydrate and 3-thiohydracrylic acid at mole ratio of 1:(1.5-1.7) into deionized water, thereby forming a mixed solution; regulating pH of the solution to 7-8; adding a selenium hydride precursor into the mixed solution and reacting for 30-35 minutes at 160-170 DEG C, thereby acquiring a cadmium selenide quantum dot; (2) dissolving the cadmium selenide quantum dot and bismuth tungstate into the deionized water, refluxing for 20-25 hours at 80-90 DEG C and centrifugally drying, thereby acquiring the cadmium selenide-bismuth tungstate compound photocatalyst. The cadmium selenide-bismuth tungstate compound photocatalyst acquired according to the invention has high catalytic activity and high stability.

The invention discloses a three-dimensional nickel cobaltate@cobalt selenide (II) nanoneedle array composite material as well as a preparation method and application thereof. The preparation method comprises the following steps: performing a hydrothermal reaction on a ZnCo2O4 nanoneedle array, sodium hydrogen selenide and a cobalt source in water to prepare the three-dimensional ZnCo2O4@CoSe nanoneedle array composite material. The three-dimensional nickel cobaltate@cobalt (II) nanoneedle array composite material provided by the invention has excellent electrocatalytic activity and cycle stability, and can be applied to electrocatalytic hydrolysis of an electrode material; and the preparation method has simple operation, low costs, mild conditions, greenness and environmental protection.

The invention belongs to the field of amino acid feed, food and medicines, and particularly relates to a method for preparing selenomethionine hydroxy analogue by virtue of a chemical synthesis methylseleno propanal method. The method comprises the following steps: preparing hydrogen selenide by virtue of selenium powder and hydrogen, enabling the hydrogen selenide to react with methanol, preparing methyl-hydroselenide, preparing methylseleno propanal from the methyl-hydroselenide and acraldehyde as well as relevant compounds, enabling a methylseleno propanal and hydrocyanic acid gas mixure toreact and synthesize DL-2-hydroxyl-4-methylseleno butyronitrile, performing acidolysis on DL-2-hydroxyl-4-methylseleno butyronitrile, separating and purifying, thus obtaining the selenomethionine hydroxy analogue and a byproduct ammonium sulfate. The selenomethionine hydroxy analogue has various excellent biological activities not possessed by a methionine hydroxy analogue, as well as organic trace element selenium necessary for the supplement of animal bodies, and has a para-insulin effect for supporting an oral preparation and can be used for treating diabetes, and can be applied to the fields such as medicines, nutrition healthcare and agriculture by the institute of environment and science.

The invention provides a preparation method of II-VI family water-soluble selenide semiconductor quantum dots, which comprises the following specific steps: adding a stabilizer into solution containing soluble cadmium salt, soluble zinc salt or soluble mercury salt, then regulating the pH value of the solution to be be alkaline, then introducing hydrogen selenide gas under inert atmosphere, and reacting till the solution is pale yellow and transparent, thereby preparing solution of a precursor, wherein the molar ratio of the soluble cadmium salt, the soluble zinc salt or the soluble mercury salt to the stabilizer is 1: 3-1: 2. High-temperature and high-pressure fast growth is performed on the solution of the precursor, thereby preparing the II-VI family water-soluble selenide semiconductor quantum dots. For the preparation method, the operation is simple, the cost is low, the toxicity is small, and the prepared II-VI family water-soluble selenide semiconductor quantum dots can be directly used for biological fluorescent marking, clinical diagnosis and other experiments.

The invention discloses a preparation method of an absorption layer of a copper-indium-gallium-selenium solar battery. The preparation method comprises the following steps: simultaneously inflating hydrogen selenide gas and inert gas into a chamber, sputtering a copper-gallium target material and an indium target material onto a substrate at room temperature by a magnetron sputtering technology under first power and within a first time period; raising the temperature of the substrate to a preset temperature, and sputtering the copper-gallium target material and the indium target material ontothe substrate by the magnetron sputtering technology within a second time period; increasing the first power to second power, and sputtering the copper-gallium target material and the indium target material onto the substrate by the magnetron sputtering technology under a preset temperature condition and within a third time period. By the preparation method of the absorption layer of the copper-indium-gallium-selenium solar battery, provided by the invention, through simultaneous sputtering of the CuGa target material and the In target material in an H2Se atmosphere, the CIGS absorption layercan be moulded in a sputtering manner in only one step, so that the processing technology is effectively simplified, and the production efficiency and the control precision are improved.