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Method for preparing copper-indium-gallium-selenium(sulfur) light absorption layer by adopting non-vacuum process

A technology of copper indium gallium selenide and light absorption layer, which is applied in the direction of final product manufacturing, sustainable manufacturing/processing, electrical components, etc., can solve problems such as inconvenience, and achieve the effect of improving compactness

Inactive Publication Date: 2010-09-01
昆山正富机械工业有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] This shows, above-mentioned existing method for light-absorbing layer obviously still has inconvenience and defect in method and use, and urgently needs to be further improved
In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but there has been no suitable method to solve the above-mentioned problems for a long time. This is obviously a problem that the relevant industry is eager to solve

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  • Method for preparing copper-indium-gallium-selenium(sulfur) light absorption layer by adopting non-vacuum process
  • Method for preparing copper-indium-gallium-selenium(sulfur) light absorption layer by adopting non-vacuum process
  • Method for preparing copper-indium-gallium-selenium(sulfur) light absorption layer by adopting non-vacuum process

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Embodiment Construction

[0044] In order to further illustrate the technical means and effects that the present invention takes to achieve the intended invention purpose, below in conjunction with the accompanying drawings and preferred embodiments, the copper indium gallium selenide (sulfur) light absorbing layer made by non-vacuum process proposed according to the present invention will be described below. The specific implementation, method, steps, features and effects of the method are described in detail below.

[0045] The aforementioned and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of preferred embodiments with reference to the drawings. For convenience of description, in the following embodiments, the same elements are denoted by the same numbers.

[0046] see figure 2 As shown, the method for fabricating a copper indium gallium selenide (sulfur) light absorbing layer in a non-vacuum process accordi...

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Abstract

The invention relates to a method for preparing a copper-indium-gallium-selenium(sulfur) light absorption layer by adopting a non-vacuum process. The method comprises the following steps of: in a formula ratio, blending two component powder, three component powder or four component powder which is of different particle size and contains IB, IIIA and VIA group elements to obtain copper-indium-gallium-selenium(sulfur)-containing mixed powder, wherein the average particle size of the small-size particles is less than 30 percent of the average particle size of the small-size particles; adding a solvent into the copper-indium-gallium-selenium(sulfur)-containing mixed powder; coating the copper-indium-gallium-selenium(sulfur)-containing pulp on a lower electrode-containing substrate by a non-vacuum coating method, obtaining a copper-indium-gallium-selenium(sulfur)-containing light absorption precursor layer by soft-baking; and putting the copper-indium-gallium-selenium(sulfur)-containing light absorption precursor layer in a high-temperature RTA furnace containing VIA group element powder for growing crystals, and obtaining the copper-indium-gallium-selenium(sulfur) light absorption layer. The method can improve the compactness of the coated film, and because a selenization method is not adopted, the use of the dangerous hydrogen selenide is avoided.

Description

technical field [0001] The invention relates to a method for a light absorbing layer, in particular to a method for making a copper indium gallium selenide (sulfur) light absorbing layer by a non-vacuum process. Background technique [0002] In recent years, with the rise of international oil prices and the rise of environmental protection awareness, green energy has become the mainstream of new energy. Among them, solar cells are obtained from the stable radiation energy of the sun, and the source will not be exhausted. Funding and policy subsidies are used to support the local solar cell industry, making the global solar industry develop very rapidly. [0003] The first generation of solar modules includes monocrystalline silicon and polycrystalline silicon solar modules. Although the photoelectric conversion efficiency is high and the mass production technology is mature, due to the high cost of materials and the lack of supply of silicon wafers due to the needs of the se...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 杨益郎陈文仁林群福
Owner 昆山正富机械工业有限公司
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