System for enhancing selenium reaction activity by hydrogenating selenium source of flexible CIGS solar cell

A solar cell, reactive technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of battery failure, flammability and explosion, high risk, etc., to improve film quality, improve reactivity, improve The effect of utilization

Active Publication Date: 2020-01-31
ZHEJIANG SHANGYUE OPTOELECTRONICS TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During the deposition process, the influence of the Se source on the film layer is the most significant. If there is a lack of Se in the film, the formation of selenium vacancy defects will cause the conductivity type of the film to change, from P-type to N-type, which will cause the entire battery completely useless
The temperature of the Se vapor generated during the co-evaporation process is 200-300 ° C. Under this condition, the Se vapor exists in the form of atomic clusters, and the number of cluster atoms is more than 5, or even larger. This cluster Se is forming When covalently bonded, the reaction energy and chemical activity are low, and the quality of the resulting absorbing layer film is very poor, and it is prone to selenium vacancy defects
In the post-selenization method, hydrogen selenide is used as the selenium source, which has high reactivity, but it is toxic in itself, which is not conducive to the preservation and use of materials, and the risk is relatively high; the current co-evaporation uses Se source evaporation crucible: in the crucible Place the selenium source, wrap the heating wire or heating plate outside, and realize the generation and eruption of selenium vapor through electric heating
[0003] If hydrogen is simply mixed into the Se vapor produced by the co-evaporation process, the hydrogen cannot affect the atomic clusters of the Se vapor, and the quality of the absorbing layer film is limited. At the same time, due to the lack of a suitable mixing control system, the reaction of Se vapor and hydrogen will produce A large amount of hydrogen selenide, although hydrogen selenide can improve the reactivity, but a large amount of hydrogen selenide has high toxicity, flammable and explosive safety hazards, and is not suitable for industrial production

Method used

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  • System for enhancing selenium reaction activity by hydrogenating selenium source of flexible CIGS solar cell
  • System for enhancing selenium reaction activity by hydrogenating selenium source of flexible CIGS solar cell
  • System for enhancing selenium reaction activity by hydrogenating selenium source of flexible CIGS solar cell

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Embodiment

[0037] Such as image 3 , Figure 4 A system for hydrogenation of selenium sources of flexible CIGS solar cells to enhance selenium reactivity is shown, comprising a selenium source 1, a hydrogen storage tank 2, an automatic gas mixing device 3 and a mixed gas output pipeline 4, and the automatic gas mixing device includes Selenium vapor control valve 31, hydrogen control valve 32 and gas delivery pipeline 33, the selenium vapor outlet of the selenium source is connected to the inlet 34 of the selenium vapor control valve, the hydrogen gas outlet of the hydrogen storage tank is connected to the inlet 35 of the hydrogen gas control valve, the selenium vapor control valve is The outlet is connected to the selenium vapor inlet of the gas delivery pipeline, the outlet of the hydrogen control valve is connected to the hydrogen inlet of the gas delivery pipeline, the outlet of the gas delivery pipeline is connected to the inlet of the vortex chamber 5, the outlet of the vortex chamb...

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Abstract

The invention discloses a system for enhancing selenium reaction activity by hydrogenating a selenium source of a flexible CIGS solar cell. The system comprises a selenium source, a hydrogen storage tank, an automatic gas mixing device and a mixed gas output pipeline, wherein the automatic gas mixing device comprises a selenium steam control valve, a hydrogen control valve and a gas conveying pipeline, a selenium steam outlet of the selenium source is connected with an inlet of the selenium steam control valve, a hydrogen outlet of the hydrogen storage tank is connected with an inlet of the hydrogen control valve, an outlet of the selenium steam control valve is connected with a selenium steam inlet of the gas conveying pipeline, an outlet of the hydrogen control valve is connected with ahydrogen inlet of the gas conveying pipeline, an outlet of the gas conveying pipeline is connected with an inlet of the mixed gas output pipeline, and the selenium steam control valve is linked with the hydrogen control valve. The system is advantaged in that automatic and uniform mixing of a selenium steam and hydrogen can be realized, the cluster Se can be effectively opened, a small amount of hydrogen selenide is generated, the reaction activity is increased, and defects of the film are reduced.

Description

technical field [0001] The invention relates to the technical field of production of copper indium gallium selenium thin film batteries, in particular to a system for enhancing the reactivity of selenium by hydrogenation of selenium sources of flexible CIGS solar cells. Background technique [0002] In the structure of preparing high-efficiency CIGS thin-film solar cells, the CIGS absorber layer prepared by co-evaporation is the core film layer of the entire cell. During the deposition process, the influence of the Se source on the film layer is the most significant. If there is a lack of Se in the film, the formation of selenium vacancy defects will cause the conductivity type of the film to change, from P-type to N-type, which will cause the entire battery Completely useless. The temperature of the Se vapor generated during the co-evaporation process is 200-300 ° C. Under this condition, the Se vapor exists in the form of atomic clusters, and the number of cluster atoms i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0749C23C14/06C23C14/24C23C14/54
CPCC23C14/06C23C14/24C23C14/548H01L31/0749H01L31/18Y02E10/541Y02P70/50
Inventor 瞿佳华刘宽菲任宇航
Owner ZHEJIANG SHANGYUE OPTOELECTRONICS TECH
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