Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Alkali metal doping method for thin-film solar cell absorption layer

A technology of solar cells and absorption layers, applied in the field of solar cells, can solve the problems of low material utilization rate and high cost of thin film deposition equipment, and achieve the effects of good compatibility, simple and controllable preparation method, and high utilization rate

Inactive Publication Date: 2016-07-06
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF3 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for doping alkali metals in the absorbing layer of thin-film solar cells, which is used to solve the problems of high cost of thin-film deposition equipment and low material utilization rate in the prior art.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Alkali metal doping method for thin-film solar cell absorption layer
  • Alkali metal doping method for thin-film solar cell absorption layer
  • Alkali metal doping method for thin-film solar cell absorption layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] Step 1. Soda-lime glass is used as the substrate, ultrasonically cleaned, then dried with pure nitrogen and placed in a magnetron sputtering vacuum chamber, dehydrated and degassed, and a double-layer Mo back electrode layer is deposited by DC magnetron sputtering, with a thickness of 0.6μm;

[0059] Step 2, put the substrate prepared with the Mo back electrode layer into the vacuum chamber, and wait for the vacuum degree to be better than 1×10 -3 After Pa, use CuGa alloy target (Ga content at.25%) and In target to co-sputter deposit CuInGa (CIG) metal prefabricated layer with a thickness of 0.6 μm;

[0060] Step 3, transfer the substrate prepared with the metal prefabricated layer into the selenization furnace, and use H 2 Se was used as a selenium source, selenized at 400°C for 30 minutes, annealed in a nitrogen atmosphere at 580°C for 30 minutes, and then cooled naturally to prepare a CIGS absorbing layer with a thickness of 1.2 μm;

[0061] Step 4. Use potassium f...

Embodiment 2

[0069] Step 1. Soda-lime glass is ultrasonically cleaned, then dried with pure nitrogen and placed in a magnetron sputtering vacuum chamber, dehydrated and degassed, and a double-layer Mo back electrode layer is deposited by DC magnetron sputtering, with a thickness of 0.6 μm;

[0070] Step 2, put the substrate prepared with the Mo back electrode layer into the vacuum chamber, and wait for the vacuum degree to be better than 1×10 -3 After Pa, use CuGa alloy target (Ga content at.25%) and In target to co-sputter deposit CuInGa (CIG) metal prefabricated layer with a thickness of 0.6 μm;

[0071] Step 3, transfer the substrate prepared with the metal prefabricated layer into the selenization furnace, and use H 2 Se was used as a selenium source, selenized at 400°C for 30 minutes, annealed in a nitrogen atmosphere at 580°C for 30 minutes, and then cooled naturally to prepare a CIGS absorbing layer with a thickness of 1.2 μm;

[0072] Step 4: Use KF powder and dimethyl sulfoxide (...

Embodiment 3

[0080] Step 1. Soda-lime glass is ultrasonically cleaned, then dried with pure nitrogen and placed in a magnetron sputtering vacuum chamber, dehydrated and degassed, and a double-layer Mo back electrode layer is deposited by DC magnetron sputtering, with a thickness of 0.6 μm;

[0081] Step 2, put the substrate prepared with the Mo back electrode layer into the vacuum chamber, and wait for the vacuum degree to be better than 1×10 -3 After Pa, the CIGS absorbing layer was prepared by co-evaporation method with a thickness of 2 μm;

[0082] Step 3. Use potassium fluoride (KF) powder and deionized water to configure a 0.5mol / L KF aqueous solution, and use a spin coating device to evenly spin coat the KF aqueous solution on the surface of the CIGS absorbing layer at a spin coating speed of 4000r / min. Coating time is 3min, spin coating once, spin coating process H 2 O evaporates and forms a KF film on the CIGS surface;

[0083] Step 4, place the CIGS absorbing layer with the KF t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides an alkali metal doping method for a thin-film solar cell absorption layer. The doping method at least comprises the steps as follows: providing a to-be-treated thin-film solar cell absorption layer; preparing a solution containing alkali metal ions; depositing the solution containing the alkali metal ions on the surface of the absorption layer by a non-vacuum coating method and placing the absorption layer in a thermal treatment furnace; and introducing an inert gas or a mixed gas of hydrogen selenide and the inert gas into the thermal treatment furnace, heating the thermal treatment furnace to a set temperature and diffusing the alkali metal ions into the absorption layer. According to the alkali metal doping method provided by the invention, atoms generated on the surface of the absorption layer can be evacuated; Cd atoms in a buffer layer CdS are promoted to diffuse to the surface of the absorption layer to form a shallow-buried PN junction; recombination of current carriers on an interface layer of the absorption layer / buffer layer is reduced; the open-circuit voltage is improved; and the cell conversion efficiency is improved. The preparation method provided by the invention is simple and controllable, does not need expensive vacuum coating equipment and is good in compatibility with a conventional technology; and the alkali metal material is high in utilization rate and low in cost.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a method for doping an alkali metal into an absorbing layer of a thin-film solar cell. Background technique [0002] With the development of economy and society, the extensive use of conventional fossil energy has led to serious environmental pollution problems, and the development and utilization of new clean energy has become a consensus among people. Since solar energy is inexhaustible, clean and pollution-free, it is the most ideal and sustainable renewable energy in the future. Solar cells directly convert light energy into electrical energy, which is an important way to utilize solar energy. [0003] Copper indium gallium selenide (CIGS) thin-film solar cells have the advantages of high light absorption coefficient, high conversion efficiency, adjustable bandgap width, high stability, and strong radiation resistance. Constantly making new breakthroughs, it is currently the most...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/18H01L31/0216H01L31/032
CPCH01L31/02168H01L31/0322H01L31/0323H01L31/18Y02E10/541Y02P70/50
Inventor 韩安军柳效辉黄勇亮王宪吴敏孟凡英刘正新
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com