Method for preparing chalcopyrite thin-film solar cells

A solar cell, chalcopyrite-based technology, applied in circuits, electrical components, final product manufacturing, etc., can solve the problem of high cost and achieve the effect of saving production costs

Inactive Publication Date: 2012-07-25
黄崇哲
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  • Claims
  • Application Information

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Problems solved by technology

Since the distribution of impurities will affect the quality stability of selenium/copper zinc tin sulfide and selenium/copper indium gallium sulfide thin film solar cells and thus affect their conversion efficiency, so currently in the preparation of selenium/copper zinc

Method used

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  • Method for preparing chalcopyrite thin-film solar cells
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  • Method for preparing chalcopyrite thin-film solar cells

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Embodiment Construction

[0027] The invention relates to a preparation method of a chalcopyrite-based thin-film solar cell. The method uses in-situ generation of reaction precursors and cooperates with vapor phase epitaxy growth technology to prepare selenium / copper indium gallium sulfide series and selenium / copper zinc-tin sulfide series. Light-absorbing layer of thin-film solar cells. Among them, in the step of in-situ generation of reaction precursors, metals such as copper, indium, gallium, or copper, zinc, and tin are placed in a crucible heated to 400 degrees Celsius to 1,000 degrees Celsius, and hydrogen chloride or chlorine gas is used to generate copper, zinc, and tin in situ. The reaction precursors of metal chlorides such as indium, gallium or copper, zinc, tin, etc., the reaction formula is as follows:

[0028] (1) Copper (Cu) → copper chloride (CuCl)

[0029] 2Cu+2HCl→2CuCl+H 2

[0030] 2Cu+Cl 2 →2CuCl

[0031] (2) Indium (In) → indium chloride (InCl, InCl 3 )

[0032] 2In+2HCl→2In...

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Abstract

The invention discloses a method for preparing chalcopyrite thin-film solar cells. The method comprises the following steps of: (a) by using a non-vacuum manufacture procedure, carrying out in-situ reaction on metals such as copper, indium, gallium and the like and hydrogen chloride or chlorine so as to form reaction precursors, and then reacting the reaction precursors with hydrogen selenide or hydrogen sulfide; (b) preparing light absorption layers of selenium/copper-indium-gallium sulfide and selenium/copper-zinc-tin sulfide thin-film solar cells in cooperation with a vapor-phase epitaxial growth technique; and (c) preparing buffer layers and transparent conductive layers of the thin-film solar cells in cooperation with oxygen. By using the method disclosed by the invention, high-purity chalcopyrite thin-film solar cells can be prepared, and the production cost is greatly saved.

Description

technical field [0001] The invention relates to a preparation method of a chalcopyrite-based thin-film solar cell, in particular, the invention relates to a preparation method of a selenium / copper indium gallium sulfide-based and a selenium / copper-zinc-tin sulfide-based thin-film solar cell. Background technique [0002] Today's solar cells are mainly silicon wafer solar cells. However, because the production of silicon wafer solar cells requires a large-scale factory building and consumes a lot of energy, and based on the limitations of physical properties, the thickness of silicon wafer solar cells is usually not less than 200 microns, so a considerable amount of silicon raw materials is required. Therefore, its material cost and production cost are still high. In view of this, thin film solar cells (thin film solar cells), especially chalcopyrite-based thin film solar cells, have gradually emerged in recent years because they can effectively reduce manufacturing costs, s...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 黄崇哲
Owner 黄崇哲
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